Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Unit Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.15–0.05 Ratings 0 to 0.1 Symbol Parameter 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 3Y (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA Forward current transfer ratio hFE VCE = 3V, IC = 10mA Collector output capacitance Cob VCB = 3V, IE = 0, f = 1MHz Transition frequency fT VCE = 3V, IC = 10mA, f = 1.5GHz 10 GHz Foward transfer gain | S21e |2 VCE = 0.3V, IC = 1mA, f = 0.9GHz 6.5 dB Noise figure NF VCE = 0.3V, IC = 1mA, f = 0.9GHz 1.7 dB 40 100 160 0.4 0.7 pF 1 2SC5190 Transistor PC — Ta IC — VCE 30 50 160 120 80 40 25 40 IB=600µA 500µA 30 400µA 300µA 20 200µA 10 60 80 100 120 140 160 1 2 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.3 1 3 10 5 6 0 30 Ta=75˚C 80 25˚C 60 –25˚C 40 20 0.3 1 3 10 30 10 3 1 0.3 1 Collector current IC (mA) 100 3.2 2.4 1.6 0 0.1 10 30 100 Cob — VCB 0.8 30 3 Collector current IC (mA) VCE=0.3V f=900MHz Noise figure NF (dB) 2 10 30 0.1 0.1 100 4.0 3 100 1.2 VCE=0.3V f=900MHz 4 1.2 VCE=3V f=1.5GHz NF — IC 10 1.0 0.3 4.8 6 0.8 300 Collector current IC (mA) 8 0.6 fT — IC 100 0 0.1 100 12 1 0.4 1000 | S21e |2 — IC 0.3 0.2 Base to emitter voltage VBE (V) VCE=3V Collector current IC (mA) 0 0.1 4 Collector output capacitance Cob (pF) 0.001 0.1 3 120 Forward current transfer ratio hFE 3 0.1 10 hFE — IC IC/IB=10 –25˚C 15 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 Ta=75˚C 0 0 Transition frequency fT (GHz) 40 25˚C 20 5 100µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 200 0 Forward transfer gain |S21e|2 (dB) VCE=3V Ta=25˚C 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 IE=0 f=1MHz Ta=25˚C 1.0 0.8 0.6 0.4 0.2 0 0.3 1 3 Collector current IC (mA) 10 1 3 10 30 100 Collector to base voltage VCB (V)