Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –4 A Collector power TC=25°C dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –100V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –1A 90 Forward current transfer ratio 1.3±0.2 W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 typ max Unit –10 µA –50 µA V 260 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.15A – 0.5 V Base to emitter saturation voltage VBE(sat) IC = –3A, IB = – 0.15A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A 30 MHz 0.15 µs 0.8 µs 0.15 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 Power Transistors 2SB944 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 30 (1) 20 10 –5 –40mA –3 –30mA –20mA –2 –5mA (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –6 –8 –10 TC=–25˚C 100˚C 25˚C –3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 –1 –3 30 10 3 30 10 Collector to base voltage VCB (V) –3 –10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=–50V TC=25˚C 10 3 1 tstg 0.3 ton tf 0.1 Non repetitive pulse TC=25˚C –30 –10 ICP IC –3 t=0.5ms 10ms 1ms –1 – 0.3 DC – 0.1 – 0.03 0.01 –100 –1 Collector current IC (A) 0.03 –30 100 –100 30 Switching time ton,tstg,tf (µs) 100 –10 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 ton, tstg, tf — IC 300 –10 3 100 1000 –3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) IE=0 f=1MHz TC=25˚C –1 Collector current IC (A) 1000 Cob — VCB –3 – 0.01 – 0.01 – 0.03 – 0.3 – 0.1 3000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 10000 –1 –25˚C fT — IC 3000 Collector current IC (A) 1 – 0.1 – 0.3 TC=100˚C – 0.03 Transition frequency fT (MHz) –3 3000 25˚C – 0.3 10000 1000 –1 –1 VCE=–2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 – 0.03 Collector output capacitance Cob (pF) –4 IC/IB=20 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –3 hFE — IC – 0.1 2 –2 10000 – 0.3 –10 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 –1 IC/IB=20 –30 – 0.1 –8mA –1 (2) (3) –50mA –4 Collector current IC (A) 40 TC=25˚C IB=–100mA –90mA –80mA –70mA –60mA Collector to emitter saturation voltage VCE(sat) (V) –100 –6 Collector current IC (A) Collector power dissipation PC (W) 50 0 – 0.8 –1.6 –2.4 Collector current IC (A) –3.2 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB944 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3