Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm ■ Features ● ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –30 A Collector current IC –20 A Collector power TC=25°C dissipation 100 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 3 ■ Electrical Characteristics 15.0±0.3 11.0±0.2 0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.2 ● 16.2±0.5 12.5 3.5 Solder Dip ● (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –100V, IE = 0 –10 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –50 µA Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –3A 90 hFE3 VCE = –2V, IC = –10A 30 Forward current transfer ratio V 260 VCE(sat)1 IC = –8A, IB = – 0.4A – 0.5 V VCE(sat)2 IC = –20A, IB = –2A –1.5 V VBE(sat)1 IC = –8A, IB = – 0.4A –1.5 V VBE(sat)2 IC = –20A, IB = –2A –2.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter saturation voltage Base to emitter saturation voltage *h FE2 IC = –3A, IB1 = – 0.8A, IB2 = 0.8A, VCC = –50V 25 MHz 0.5 µs 1.2 µs 0.2 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 Power Transistors 2SB1156 IC — VCE 160 120 (1) 80 40 –16 –200mA –140mA –12 –100mA –60mA –3 –1 (2) (1) – 0.1 –40mA – 0.03 (2) (3) –20mA 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 – 0.01 – 0.1 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –1 –3 –10 –30 Collector current IC (A) VBE(sat) — IC hFE — IC –100 –3 TC=100˚C –1 25˚C – 0.3 IC/IB=10 –30 –10 –3 TC=–25˚C –1 100˚C – 0.3 –25˚C – 0.1 25˚C – 0.1 – 0.03 – 0.03 – 0.3 –1 –3 –10 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) –1 –3 fT — IC ton, tstg, tf — IC 100 30 10 3 1 3 3 –10 – 0.3 –1 1 ton tf 0.3 –3 –10 –30 Area of safe operation (ASO) tstg Non repetitive pulse TC=25˚C ICP t=1ms IC –10 10ms DC –3 –1 – 0.3 0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 0.03 0.01 Collector current IC (A) 10 –100 0.3 –3 –25˚C 30 –30 Switching time ton,tstg,tf (µs) VCE=–10V f=10MHz TC=25˚C –1 25˚C 100 Collector current IC (A) 10 0.1 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C Collector current IC (A) 1000 300 300 1 – 0.1 –10 Collector current IC (A) – 0.01 – 0.1 VCE=–2V 1000 Forward current transfer ratio hFE IC/IB=10 –10 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) (1) IC/IB=10 (2) IC/IB=20 TC=25˚C –10 – 0.3 –80mA –8 –4 0 Transition frequency fT (MHz) TC=25˚C IB=–300mA Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) 0 2 VCE(sat) — IC –20 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 200 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) – 0.1 – 0.03 –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1156 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3