Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 20 A Collector current IC 10 A 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 ● 10.0±0.2 φ3.1±0.1 4.0 ● 14.0±0.5 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.7±0.1 ■ Features 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Collector power TC=25°C PC Ta=25°C dissipation 30 Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 5.08±0.5 1 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 hFE3 VCE = 2V, IC = 6A 30 VCE(sat)1 IC = 6A, IB = 0.3A 0.5 V VCE(sat)2 IC = 10A, IB = 1A 1.5 V VBE(sat)1 IC = 6A, IB = 0.3A 1.5 V VBE(sat)2 IC = 10A, IB = 1A 2.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage *h FE2 IC = 6A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 50V V 260 20 MHz 0.5 µs 2.0 µs 0.2 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD2151 IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 30 (1) 20 10 (2) TC=25˚C IB=400mA Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 20 16 250mA 200mA 160mA 12 120mA 100mA 80mA 60mA 8 40mA 4 20mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 VBE(sat) — IC 3 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 Collector current IC (A) hFE — IC IC/IB=10 fT — IC 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.1 0.3 1 3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.3 Collector current IC (A) 30 tstg 3 1 ton 0.3 10 30 tf 0.1 Non repetitive pulse TC=25˚C ICP t=1ms IC 10 10ms 3 DC 1 0.3 0.1 0.03 0.03 0.01 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Area of safe operation (ASO) Collector current IC (A) 10 3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 1 Collector current IC (A) ton, tstg, tf — IC 100 300 0.3 1 0.1 10 Transition frequency fT (MHz) 30 VCE=10V f=1MHz TC=25˚C VCE=2V 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 1000 0.01 0.01 0.03 Switching time ton,tstg,tf (µs) 10 Collector to emitter voltage VCE (V) 100 2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2151 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3