Transistor 2SD2067 (Tentative) Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 ■ Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE. Large peak collector current ICP. High collector to emitter voltage VCEO. Allowing supply with the radial taping. +0.1 ● 0.65 max. 0.45–0.05 ● 1.0 1.0 0.2 For low-frequency output amplification 0.5 4.5±0.1 0.15 6.9±0.1 ■ Absolute Maximum Ratings * (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 2 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Internal Connection C B E ≈200Ω ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ VCB = 25V, IE = 0 max Unit 0.1 µA 1 µA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 120 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 1mA*2 VBE(sat) 1mA*2 Base to emitter saturation voltage VCE = 10V, IC = 1A*2 IC = 1A, IB = 4000 40000 *2 *1h FE Rank classification Rank hFE Q R 1.5 V 2 V Pulse measurement S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 1 2SD2067 Transistor PC — Ta IC — VCE VCE(sat) — IC Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 Ta=25˚C 2.5 0.2 IB=180µA 150µA 120µA 2.0 90µA 1.5 60µA 1.0 0.5 0 30µA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 25˚C Ta=–25˚C 1 100˚C 0.3 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) Single pulse Ta=25˚C ICP t=10ms IC 1 t=1s 0.3 0.1 0.03 0.01 0.003 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2 –25˚C 103 102 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 50 40 30 20 10 0 0.1 0.3 1 3 Collector current IC (A) Area of safe operation (ASO) 10 25˚C 104 10 0.01 0.03 Ta=100˚C 60 Ta=100˚C Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.03 25˚C 1 Cob — VCB VCE=10V IC/IB=1000 0.1 0.01 3 hFE — IC 105 3 IC/IB=1000 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 10 Collector output capacitance Cob (pF) 0 3 Collector to emitter saturation voltage VCE(sat) (V) 3.0 Collector current IC (A) Collector power dissipation PC (W) 1.2 10 1 3 10 30 100 Collector to base voltage VCB (V)