Ordering number : ENN7153 2SK3415LS N-Channel Silicon MOSFET 2SK3415LS DC / DC Converter, Motor Driver Applications Features • • Package Dimensions Low ON-resistance. 4V drive. unit : mm 2078C [2SK3415LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications Absolute Maximum Ratings at Ta=25°C Parameter 2.55 Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V ID 40 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 160 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=20A 1.0 RDS(on)1 RDS(on)2 ID=20A, VGS=10V ID=20A, VGS=4V 30 max Unit V 10 µA ±10 µA 2.4 V 13 17 mΩ 17 24 mΩ 42 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3299 No.7153-1/4 2SK3415LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 3000 Output Capacitance 600 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 180 pF Turn-ON Delay Time td(on) 23 ns Rise Time tr td(off) ID=18A, VGS=10V, VDD=30V, RGS=50Ω ID=18A, VGS=10V, VDD=30V, RGS=50Ω 140 ns 290 ns Turn-OFF Delay Time Fall Time ID=18A, VGS=10V, VDD=30V, RGS=50Ω ID=18A, VGS=10V, VDD=30V, RGS=50Ω tf Total Gate Charge 120 ns Qg VDS=10V, VGS=10V, ID=40A 89 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=40A VDS=10V, VGS=10V, ID=40A 10 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=40A, VGS=0 0.9 22 nC 1.2 V Switching Time Test Circuit VDD=30V 10V 0V VIN ID=20A RL=1.5Ω VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω 2SK3415LS ID -- VDS 15 VGS=3.0V 10 --25° 75°C C 50 40 30 °C 20 5 25 10 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 0 2.0 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT04137 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 4.5 IT04136 RDS(on) -- Tc 30 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C ID=20A 35 0.5 IT04135 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 75° C --25 °C 20 Tc= 70 Tc= 25 VDS=10V 80 Drain Current, ID -- A 30 ID -- VGS 90 3.5V 5.0V 10.0V 8.0V Drain Current, ID -- A 35 4.0V 6.0V 40 25°C S 25 20 ,V 20A =4V GS I D= V 10 S= , VG 20A 15 I D= 10 5 0 --60 --40 --20 0 20 40 60 80 Case Temperature, Tc -- °C 100 120 140 IT04138 No.7153-2/4 2SK3415LS --2 1.0 7 5 3 2 75 °C °C 25 0.1 7 5 3 2 0.01 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 Drain Current, ID -- A VDD=30V VGS=10V 7 5 0 2 3 5 7100 IT04139 SW Time -- ID 1000 2 tf 100 7 5 tr 3 0.4 0.6 0.8 1.0 1.2 IT04140 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 td (off) 3 0.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1.0 7 5 3 2 C = Tc 10 7 5 3 2 °C 25°C C 5° VGS=0 Tc=7 5 10 7 5 3 2 IF -- VSD 100 7 5 3 2 --25° yfs -- ID VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 100 7 5 3 2 Ciss 3 2 1000 7 Coss 5 3 td(on) 2 2 Crss 10 100 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 7 0 100 7 5 Drain Current, ID -- A 8 4 2 0 30 40 50 60 70 Total Gate Charge, Qg -- nC 90 DC 10 7 5 he at sin k 1.0 0.5 0 10 m 0m s s Op era 3 2 tio Operation in this area is limited by RDS(on). n 1.0 7 5 Tc=25°C Single pulse 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W No 1.5 70 IT04142 10 5 7 100 IT04144 PD -- Tc 40 2.0 60 10µs 10 0µ s 1m s ID=40A IT04143 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 80 50 3 2 0.1 20 40 IDP=160A 3 2 10 30 ASO 3 2 6 20 Drain-to-Source Voltage, VDS -- V VDS=10V ID=40A 0 10 IT04141 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04145 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT04146 No.7153-3/4 2SK3415LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.7153-4/4