SANKEN 2SB1352

(2 k Ω)(1 0 0Ω) E
2SB1352
Silicon PNP Epitaxial Planar Transistor
hFE
mA
–60min
V
VCE=–4V, IC=–10A
2000min
IB
–1
A
VCE(sat)
IC=–10A, IB=–20mA
–1.5max
PC
60(Tc=25°C)
W
VBE(sat)
IC=–10A, IB=–20mA
–2.0max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
130typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
170typ
pF
Tstg
3.3
3.0
V
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–20
20
0.7typ
1.5typ
0.6typ
–5
–1
–2
–3
–4
–5
–20
I C =–10A
–5A
–1
0
–0.1
–1
–10
10000
DC Cur rent Gain h FE
Typ
5000
–10
–20
12
C
25
5000
˚C
–30
˚C
1000
500
–0.3 –0.5
–1
Collector Current I C (A)
–5
–10
–20
s
s
)
at
si
20
nk
20
he
10
ite
5
fin
Without Heatsink
Natural Cooling
40
In
–0.5
–0.1
1
1000
ith
–1
–0.05
–2
100
W
Collecto r Cur ren t I C (A)
m
–5
40
0.5
10
P c – T a Derating
1m
DC
10
80
Emitter Current I E (A)
1
60
–10
120
–2.4
Time t(ms)
–30
Typ
42
0.3
Safe Operating Area (Single Pulse)
160
–2
0.5
(V C E =–12V)
200
0
0.05 0.1
1
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut-o ff F requ ency f T (MH Z )
5˚
–1
θ j-a – t Characteristics
5
Ma ximum Po we r Dissipatio n P C (W)
DC Cur rent Gain h FE
(V C E =–4V)
20000
240
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
20000
–5
0
–100
Base Current I B (mA)
(V C E =–4V)
–1
–10
–5
–6
h FE – I C Characteristics (Typical)
1000
800
–0.3
–15
–1A
Collector-Emitter Voltage V C E (V)
10000
(V C E =–4V)
emp
–2
θ j- a ( ˚C/W)
0
–3
Transient Thermal Resistance
0
I C – V BE Temperature Characteristics (Typical)
eT
–1mA
E
Cas
–10
C
3.35
Weight : Approx 6.5g
a. Type No.
b. Lot No.
˚C (
–2m A
0.65 +0.2
-0.1
1.5
125
=–
IB
Collector Current I C (A)
–3 mA
–15
B
Collector Current I C (A)
–4 m A
4.4
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
10
m
A
–6m
+0.2
-0.1
5.45±0.1
1.5
RL
(Ω)
0.8
2.15
1.05
VCC
(V)
–20
1.75
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
)
A
–10max
mp)
–12(Pulse–20)
VEB=–6V
IC=–10mA
3.45 ±0.2
e Te
V(BR)CEO
5.5±0.2
emp
IEBO
V
15.6±0.2
(Cas
V
–6
µA
–30˚C
–60
VEBO
–10max
0.8±0.2
VCEO
VCB=–60V
5.5
ICBO
Unit
1.6
V
2SB1352
se T
–60
IC
C
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
(Ca
VCBO
Symbol
25˚C
Unit
9.5±0.2
■Electrical Characteristics
(Ta=25°C)
2SB1352
Symbol
Equivalent circuit
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
23.0±0.3
■Absolute maximum ratings
B
16.2
Darlington
Without Heatsink
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
3.5
0
0
50
100
Ambient Temperature Ta(˚C)
150