SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 (NPN) 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 5 Collector current IC 200 mA Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤240 V TS = 71 °C 1For calculation of R -65 ... 150 Unit K/W thJA please refer to Application Note Thermal Resistance 1 Jul-28-2003 SMBT3906/ MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - V(BR)EBO 5 - - I CBO - - 50 IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain1) - hFE IC = 100 µA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage-1) 1Puls VBEsat test: t ≤ 300µs, D = 2% 2 Jul-28-2003 SMBT3906/ MMBT3906 AC Characteristics Transition frequency 250 - - Ccb - - 4.5 Ceb - - 10 h11e 2 - 12 kΩ h12e 0.1 - 10 10-4 h21e 100 - 400 h22e 3 - 60 µS td - - 35 ns tr - - 35 tstg - - 225 tf - - 75 F - - 4 fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf. ratio - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Noise figure dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 Jul-28-2003 SMBT3906/ MMBT3906 Test circuit Delay and rise time -3.0 V 275 Ω <1.0 ns +0.5 V 10 kΩ 0 C <4.0 pF -10.6 V D = 2% 300 ns EHN00059 Storage and fall time -3.0 V <1.0 ns 275 Ω +9.1 V 0 t1 -10.9 V 10 < t 1< 500 µs D = 2% 10 kΩ C 1N916 <4.0 pF EHN00060 4 Jul-28-2003 SMBT3906/ MMBT3906 DC current gain hFE = ƒ(IC) Saturation voltage IC = ƒ(VBEsat ; VCEsat) VCE = 1 V, normalized hFE = 10 EHP00774 10 1 EHP00767 2 mA h FE ΙC 5 10 2 5 125 C V BE V CE 25 C 10 0 10 1 -55 C 5 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 0 2 0.2 0.4 0.6 ΙC V BE sat , V CE sat Total power dissipation P tot = ƒ(TA*; TS ) Permissible Pulse Load * Package mounted on epoxy Ptotmax/PtotDC = ƒ(tp ) EHP00766 400 1.0 V 1.2 0.8 mW EHP00936 10 3 Ptot max 5 Ptot DC Ptot D= tp T tp T 300 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 200 TA TS 10 1 100 0 5 0 50 100 ˚C 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp TA ; TS 5 Jul-28-2003 SMBT3906/ MMBT3906 Short-circuit forward current Open-circuit reverse voltage transfer ratio h21e = ƒ(IC ) transfer ratio h12e = ƒ(IC ) VCE = 10V, f = 1MHz VCE = 10V, f = 1kHz EHP00770 10 3 EHP00769 10 -3 h 12e h 21e 5 5 10 2 10 -4 5 5 10 1 -1 10 5 10 0 mA 5 10 10 -5 1 10 ΙC -1 5 10 Open-circuit output admittance Input impedance h22e = ƒ(IC) VCE = 10V, f = 1MHz h11e = ƒ(IC) VCE = 10 V, f = 1kHz EHP00771 10 2 µs h 22e 0 h 11e ΙC 10 1 EHP00768 10 2 5 mA kΩ 10 1 5 10 1 10 0 5 5 10 0 -1 10 5 10 0 mA 5 10 10 -1 -1 10 1 5 10 0 mA 10 1 ΙC ΙC 6 Jul-28-2003 SMBT3906/ MMBT3906 Delay time td = ƒ(IC) Rise time tr = ƒ(IC) Fall time tf = ƒ(IC) EHP00772 10 3 EHP00773 10 3 25 C 125 C ns ns tr td t r ,t d tf h FE = 10 VCC = 40 V 10 2 10 VCC = 3 V 2 h FE = 20 15 V 40 V 10 1 10 1 V BE = 2 V h FE = 10 0V 10 0 0 10 5 10 1 5 10 2 mA 5 10 10 0 0 10 3 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC 7 Jul-28-2003