SMBT5087 PNP Silicon Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage 2 Low noise between 30Hz and 15kHz Type SMBT5087 Marking s2Q 1 Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 3 Collector current IC 50 mA Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V TS = 71 °C -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 240 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. Unit DC Characteristics V(BR)CEO 50 - - V(BR)CBO 50 - - V(BR)EBO 3 - - VCB = 10 V, IE = 0 - - 10 nA VCB = 35 V, IE = 0 - - 50 nA VCB = 35 V, IE = 0 , TA = 150 °C - - 20 µA Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector -base cutoff current ICBO DC current gain1) hFE - IC = 100 µA, VCE = 5 V 250 - 800 IC = 1 mA, VCE = 5 V 250 - - IC = 10 mA, VCE = 5 V 250 - - VCEsat - - 0.3 VBEsat - - 0.85 40 - - MHz Ccb - - 4 pF h21e 250 - 900 Collector-emitter saturation voltage1) V IC = 10 mA, IB = 1 mA Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA AC Characteristics Transition frequency fT IC = 0.5 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Short-circuit forward current transf. ratio - IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure dB F IC = 100 µA, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 3 k - - 2 - - 2 IC = 2 mA, VCE = 5 V, f = 10HZ to 15kHz , RS = 10 k 1Puls test: t 300µs, D = 2% 2 Nov-30-2001 SMBT5087 Collector-base capacitance CCB = (VCB0) Total power dissipation Ptot = (TS ) Emitter-base capacitance CEB= (VEB0) f = 1MHz 12 400 SMBT 5086/87 EHP00784 CCB0 (C EB0) pF mW 10 Ptot 300 8 C EBO 250 6 200 CCBO 150 4 100 2 50 0 0 20 40 60 80 120 °C 100 0 10 -1 150 5 V 10 1 VCB0 , (VEB0 ) 10 0 TS Transition frequency fT = (IC ) VCE = 5 V Permissible Pulse Load Ptotmax/PtotDC = (tp) 10 3 SMBT 5086/87 EHP00785 Ptot max 5 Ptot DC D= 10 3 MHz tp tp T SMBT 5086/87 EHP00786 fT 5 T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 -1 0 5 10 0 5 10 1 mA 10 2 ΙC tp 3 Nov-30-2001 SMBT5087 Base-emitter saturation voltage Collector-emitter saturation voltage IC = (VBEsat ), hFE = 40 IC = (VCEsat), hFE = 40 10 2 SMBTA 5086/87 EHP00787 mA ΙC ΙC 100 ˚C 25 ˚C -50 ˚C 10 1 5 5 10 0 10 0 5 5 0 0.2 0.4 0.6 0.8 V EHP00788 mA 10 1 10 -2 10 -1 SMBT 5086/87 10 2 10 -1 1.2 100 ˚C 25 ˚C -50 ˚C 0.1 0 0.2 0.3 V BEsat V 0.5 VCEsat Collector current IC = (VBE) DC current gain hFE = (IC) VCE = 1 V VCE = 1V 10 2 mA 0.4 SMBT 5086/87 EHP00789 ΙC 10 3 h FE 5 SMBT 5086/87 EHP00790 100 ˚C 25 ˚C 10 1 10 2 -50 ˚C 5 5 10 0 5 10 1 100 ˚C 10 -1 25 ˚C -50 ˚C 5 5 10 -2 0 0.5 V 10 0 10 -2 1.0 10 -1 10 0 10 1 mA 10 2 ΙC V BE 4 Nov-30-2001 SMBT5087 Collector cutoff current ICBO = (TA) VCB = 30 V SMBT 5086/87 10 4 nA Noise figure F = (VCE) IC = 0.2mA, RS = 2k , f = 1kHz EHP00791 Ι CBO 20 F 10 SMBT 5086/87 EHP00792 dB 3 15 max 10 2 10 10 1 5 typ 10 0 10 -1 0 50 100 ˚C 0 10 -1 150 10 0 V 10 2 V CE 10 1 TA Noise figure F = (f) Noise figure F = (IC ) VCE = 5V, f = 120Hz IC = 0.2mA, VCE = 5V, RS = 2 k 20 F SMBT 5086/87 EHP00793 dB 20 F SMBT 5086/87 EHP00794 dB 15 15 10 10 R S = 1 MΩ 100 k Ω 10 kΩ 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 f 10 -2 10 -1 10 0 mA 10 1 ΙC 5 Nov-30-2001 SMBT5087 Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 F Noise figure F = (IC ) VCE = 5V, f = 10kHz SMBT 5086/87 EHP00795 dB 20 F 15 R S = 1 MΩ SMBT 5086/87 dB 100 k Ω 10 10 1 kΩ 10 kΩ 500 Ω 5 5 1 kΩ 500 Ω 0 10 -3 R S = 1 MΩ 15 100 k Ω 10 kΩ EHP00796 10 -2 10 -1 10 0 0 10 -3 mA 10 1 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC 6 Nov-30-2001