INFINEON SMBT5087

SMBT5087
PNP Silicon Transistor
3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
2
Low noise between 30Hz and 15kHz
Type
SMBT5087
Marking
s2Q
1
Pin Configuration
1=B
2=E
VPS05161
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
3
Collector current
IC
50
mA
Total power dissipation-
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
TS = 71 °C
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
240
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBT5087
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
Unit
DC Characteristics
V(BR)CEO
50
-
-
V(BR)CBO
50
-
-
V(BR)EBO
3
-
-
VCB = 10 V, IE = 0
-
-
10
nA
VCB = 35 V, IE = 0
-
-
50
nA
VCB = 35 V, IE = 0 , TA = 150 °C
-
-
20
µA
Collector-emitter breakdown voltage
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector -base cutoff current
ICBO
DC current gain1)
hFE
-
IC = 100 µA, VCE = 5 V
250
-
800
IC = 1 mA, VCE = 5 V
250
-
-
IC = 10 mA, VCE = 5 V
250
-
-
VCEsat
-
-
0.3
VBEsat
-
-
0.85
40
-
-
MHz
Ccb
-
-
4
pF
h21e
250
-
900
Collector-emitter saturation voltage1)
V
IC = 10 mA, IB = 1 mA
Base emitter saturation voltage-1)
IC = 10 mA, IB = 1 mA
AC Characteristics
Transition frequency
fT
IC = 0.5 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Short-circuit forward current transf. ratio
-
IC = 1 mA, VCE = 5 V, f = 1 kHz
Noise figure
dB
F
IC = 100 µA, VCE = 5 V, f = 1 kHz,
f = 200 Hz, RS = 3 k
-
-
2
-
-
2
IC = 2 mA, VCE = 5 V, f = 10HZ to 15kHz ,
RS = 10 k
1Puls test: t 300µs, D = 2%
2
Nov-30-2001
SMBT5087
Collector-base capacitance CCB = (VCB0)
Total power dissipation Ptot = (TS )
Emitter-base capacitance CEB= (VEB0)
f = 1MHz
12
400
SMBT 5086/87
EHP00784
CCB0
(C EB0) pF
mW
10
Ptot
300
8
C EBO
250
6
200
CCBO
150
4
100
2
50
0
0
20
40
60
80
120 °C
100
0
10 -1
150
5
V
10 1
VCB0 , (VEB0 )
10 0
TS
Transition frequency fT = (IC )
VCE = 5 V
Permissible Pulse Load
Ptotmax/PtotDC = (tp)
10 3
SMBT 5086/87
EHP00785
Ptot max
5
Ptot DC
D=
10 3
MHz
tp
tp
T
SMBT 5086/87
EHP00786
fT
5
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
5
10 1
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 -1
0
5 10 0
5 10 1
mA 10 2
ΙC
tp
3
Nov-30-2001
SMBT5087
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC = (VBEsat ), hFE = 40
IC = (VCEsat), hFE = 40
10 2
SMBTA 5086/87
EHP00787
mA
ΙC
ΙC
100 ˚C
25 ˚C
-50 ˚C
10 1
5
5
10 0
10 0
5
5
0
0.2
0.4
0.6
0.8
V
EHP00788
mA
10 1
10 -2
10 -1
SMBT 5086/87
10 2
10 -1
1.2
100 ˚C
25 ˚C
-50 ˚C
0.1
0
0.2
0.3
V BEsat
V
0.5
VCEsat
Collector current IC = (VBE)
DC current gain hFE = (IC)
VCE = 1 V
VCE = 1V
10 2
mA
0.4
SMBT 5086/87
EHP00789
ΙC
10 3
h FE
5
SMBT 5086/87
EHP00790
100 ˚C
25 ˚C
10 1
10 2 -50 ˚C
5
5
10
0
5
10 1
100 ˚C
10 -1
25 ˚C
-50 ˚C
5
5
10 -2
0
0.5
V
10 0
10 -2
1.0
10 -1
10 0
10 1
mA 10 2
ΙC
V BE
4
Nov-30-2001
SMBT5087
Collector cutoff current ICBO = (TA)
VCB = 30 V
SMBT 5086/87
10 4
nA
Noise figure F = (VCE)
IC = 0.2mA, RS = 2k , f = 1kHz
EHP00791
Ι CBO
20
F
10
SMBT 5086/87
EHP00792
dB
3
15
max
10 2
10
10 1
5
typ
10 0
10 -1
0
50
100
˚C
0
10 -1
150
10 0
V
10 2
V CE
10 1
TA
Noise figure F = (f)
Noise figure F = (IC )
VCE = 5V, f = 120Hz
IC = 0.2mA, VCE = 5V, RS = 2 k
20
F
SMBT 5086/87
EHP00793
dB
20
F
SMBT 5086/87
EHP00794
dB
15
15
10
10
R S = 1 MΩ
100 k Ω
10 kΩ
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
f
10 -2
10 -1
10 0
mA 10 1
ΙC
5
Nov-30-2001
SMBT5087
Noise figure F = (IC )
VCE = 5V, f = 1kHz
20
F
Noise figure F = (IC )
VCE = 5V, f = 10kHz
SMBT 5086/87
EHP00795
dB
20
F
15
R S = 1 MΩ
SMBT 5086/87
dB
100 k Ω
10
10
1 kΩ
10 kΩ
500 Ω
5
5
1 kΩ
500 Ω
0
10 -3
R S = 1 MΩ
15
100 k Ω 10 kΩ
EHP00796
10 -2
10 -1
10 0
0
10 -3
mA 10 1
10 -2
10 -1
10 0
mA 10 1
ΙC
ΙC
6
Nov-30-2001