Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 0.8±0.1 0.5max. 2.54±0.3 20 emitter voltage 2SD1538A 40 VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SD1538 current 2SD1538A 0 to 0.4 1.1 max. 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff R0.5 R0.5 2.54±0.3 W 1.3 ■ Electrical Characteristics 1.0±0.1 0.8±0.1 25 PC 6.0±0.3 V Emitter to base voltage Collector power TC=25°C 3.4±0.3 14.7±0.5 VCEO Unit: mm 8.5±0.2 +0.4 2SD1538 V 50 3.0–0.2 Collector to 40 VCBO 4.4±0.5 2SD1538A +0 2SD1538 base voltage Unit 1.5–0.4 Collector to Ratings 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 Symbol 2 2.0 Parameter 1 4.4±0.5 ■ 5.08±0.5 Absolute Maximum Ratings (TC=25˚C) Conditions min typ max Unit VCB = 40V, IE = 0 50 VCB = 50V, IE = 0 50 IEBO VEB = 5V, IC = 0 50 VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 1A 90 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.1A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.1A 1.5 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Emitter cutoff current Collector to emitter 2SD1538 voltage 2SD1538A Forward current transfer ratio *h FE2 ICBO IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 20 µA µA V 40 260 120 MHz 0.2 µs 0.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1538, 2SD1538A IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.3W) 35 30 (1) 25 TC=25˚C 5 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 6 20 15 (2) 10 40mA 4 30mA 3 20mA 2 10mA 1 (3) 5 IB=60mA 50mA 5mA (4) 0 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 VBE(sat) — IC 10 12 25˚C TC=–25˚C 100˚C 0.1 0.03 3000 1 3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.3 1 3 10 30 100 Area of safe operation (ASO) Non repetitive pulse TC=25˚C tstg ton tf 0.1 10 ICP IC t=1ms 3 300ms 0.3 0.1 0.03 0.03 0.01 0.01 2 3 4 5 6 7 Collector current IC (A) 8 10ms 1 2SD1538 Collector current IC (A) 30 2SD1538A Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=20V TC=25˚C 1 0.1 0.3 1 3 10 VCE=5V f=10MHz TC=25˚C 300 100 30 10 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 0 0.01 0.01 0.03 3 Collector current IC (A) ton, tstg, tf — IC 0.3 0.03 1000 1 0.1 10 10 1 –25˚C 0.1 3000 Collector current IC (A) 3 TC=100˚C 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 3 0.3 1 fT — IC 1000 0.1 3 VCE=2V 10 0.3 10 10000 IC/IB=10 30 1 IC/IB=10 30 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10000 0.01 0.01 0.03 2 6 100 Collector to emitter voltage VCE (V) 100 Switching time ton,tstg,tf (µs) 4 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1538, 2SD1538A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3