Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm ■ Features Symbol Collector to 2SD1350 base voltage 2SD1350A Collector to 2SD1350 Ratings * 4.5±0.1 0.55±0.1 400 VCBO 600 400 VCEO 500 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Symbol 2SD1350 voltage 2SD1350A Collector to emitter 2SD1350 voltage 2SD1350A 1 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Collector to base 2 V Emitter to base voltage 1cm2 0.45±0.05 V 3 emitter voltage 2SD1350A 1.0 0.85 Unit 4.1±0.2 (Ta=25˚C) 1.25±0.05 Parameter 2.4±0.2 2.0±0.2 3.5±0.1 ■ Absolute Maximum Ratings 1.0 7 ● 2.5±0.1 1.5 R0.9 R0.9 0. ● 6.9±0.1 1.5 0.4 ● High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R ● 1.0±0.1 ● Conditions VCBO IC = 100µA, IE = 0 VCEO IC = 500µA, IB = 0 min typ max 400 Unit V 600 400 V 500 Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE VCE = 5V, IC = 30mA 30 Collector to emitter saturation voltage VCE(sat) IC = 250mA, IB = 50mA* 1.5 V Base to emitter saturation voltage VBE(sat) IC = 250mA, IB = 50mA* 1.5 V Transition frequency fT VCB = 30V, IE = –20mA, f = 200MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz Turn-on time Fall time Storage time 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A ton tf tstg V 55 MHz 7 VCC = 200V, IC = 100mA 0.4 IB1 = 10mA, IB2 = –10mA 1.0 VCC = 200V, IC = 100mA 0.7 IB1 = 10mA, IB2 = –10mA 1.0 VCC = 200V, IC = 100mA 3.6 IB1 = 10mA, IB2 = –10mA 4.0 pF µs µs µs * Pulse measurement 1 Transistor 2SD1350, 2SD1350A IC — VCE 1.4 1.2 1.0 0.8 0.6 0.4 Ta=25˚C 100 Collector current IC (mA) 80 IB=1.0mA 60 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 40 0.4mA 0.3mA 0.2mA 0.1mA 20 0.2 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 30 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 3 10 30 100 300 1000 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 25 20 15 10 5 0 10 30 100 300 1000 Collector to base voltage VCB (V) Ta=75˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector current IC (mA) 60 VCE=5V 100 80 Ta=75˚C 60 25˚C –25˚C 40 20 1 3 10 30 100 300 Collector current IC (mA) Cob — VCB 30 3 fT — I E 0 1 10 12 120 IC/IB=5 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 IC/IB=5 30 hFE — IC 100 Collector output capacitance Cob (pF) 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 VCB=30V Ta=25˚C Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.6 1000 50 40 30 20 10 0 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Emitter current IE (A) –1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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