ETC 2SK1980

Power F-MOS FETs
2SK1980
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 15mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 25ns
● No secondary breakdown
unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
10.0±0.3
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
1.0±0.1
1.5±0.1
■ Applications
1.1max.
2.0
10.5min.
1.5max.
0.8±0.1
0.5max.
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.3
Parameter
Symbol
Unit
Drain to Source breakdown voltage
VDSS
800
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±2
A
Pulse
IDP
±4
A
EAS*
15
mJ
Drain current
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
5.08±0.5
1
2
3
1: Gate
2: Drain
3: Source
N Type Package
W
1.3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 640V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 1A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 1A
Diode forward voltage
VDSF
IDR = 2A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
800
V
2
4.8
0.7
5
V
7
Ω
1.1
S
−1.3
V
350
pF
60
pF
25
pF
Turn-on time
td(on)
15
ns
Rise time
tr
VGS = 10V, ID = 1A
20
ns
Fall time
tf
VDD = 200V, RL = 200Ω
25
ns
Turn-off time (delay time)
td(off)
60
ns
Thermal resistance between channel and case
Rth(ch-c)
3.125
°C/W
1
Power F-MOS FETs
2SK1980
PD  Ta
Area of safe operation (ASO)
100
25
50
IDP
t=100µs
3 I
D
1
0.3
1ms
0.1
10ms
DC
100ms
0.03
40
30
(1)
20
10
(2)
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
20
40
60
80 100 120 140 160
ID  VDS
TC=25˚C
2.0
Drain current ID (A)
6.5V
1.5
6.0V
1.0
5.5V
TC=0˚C
25˚C
100˚C
1.0
0.5
5.0V
0
0
10
20
30
40
50
60
0
Drain to source voltage VDS (V)
2
4
6
8
10
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
2.5
Drain current ID (A)
3.0
150
8
6
VGS=10V
15V
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain current ID (A)
td(on), tr, tf, td(off)  ID
f=1MHz
TC=25˚C
1000
1.6
125
120
3000
2.0
100
10
Ciss, Coss, Crss  VDS
VDS=25V
TC=25˚C
75
TC=25˚C
12
10000
0
50
12
Gate to source voltage VGS (V)
| Yfs |  ID
2.4
Forward transfer admittance |Yfs| (S)
150˚C
1.5
40W
0.5
0
5
Junction temperature Tj (˚C)
Ciss
300
100
Coss
30
Crss
10
3
Switching time td(on),tr,tf,td(off) (ns)
Drain current ID (A)
VDS=25V
10V
2.0
10
RDS(on)  ID
2.5
2.5
15
ID  VGS
3.0
VGS=15V
20
Ambient temperature Ta (˚C)
Drain to source ON-resistance RDS(on) (Ω)
1
VDD=50V
ID=2A
0
25
0
0.01
2
Avalanche energy capacity EAS (mJ)
10
(1) TC=Ta
(2) Without heat sink
(PD=1.3W)
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
EAS  Tj
VDD=200V
VGS=10V
TC=25˚C
100
80
td(off)
60
40
tf
tr
20
td(on)
1
0
50
100
150
200
Drain to source voltage VDS (V)
0
0
0.5
1.0
1.5
Drain current ID (A)
2.0
Power F-MOS FETs
2SK1980
VDS, VGS  Qg
Rth(t)  t
18
400
VGS
16
14
300
12
10
VDS
200
8
6
100
4
2
0
0
4
8
12
16
20
24
28
Gate charge amount Qg (nC)
0
Thermal resistance Rth(t) (˚C/W)
1000
20
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
500
Notes: Rth was measured at Ta=25˚C
and under natural convection.
(1) without heat sink
(2) with a 50 × 50 × 2mm Al heat sink
(1)
100
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3