Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 10.0 VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±20 A Pulse IDP ±40 A 20 mJ Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C EAS* PD 100 2.0 18.6±0.5 0.7±0.1 5.5±0.3 Unit Drain to Source breakdown voltage Drain current * Ratings 5˚ 5˚ 5.45±0.3 5˚ 1 2 3 2.0 Symbol 3.3±0.3 0.7±0.1 5.45±0.3 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 4.0 2.0±0.2 1.1±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Parameter 5˚ 26.5±0.5 ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 3.0±0.3 φ3.2±0.1 4.5 15.5±0.5 1: Gate 2: Drain 3: Source TOP-3E Package W 3 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 0.1mH, IL = 20A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 400V, VGS = 0 100 µA Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 10A Forward transfer admittance | Yfs | VDS = 25V, ID = 10A Diode forward voltage VDSF IDR = 20A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 500 V 1 0.32 7.2 5 V 0.4 Ω 12 S −2.8 V 3000 pF 430 pF 175 pF 150 ns 140 ns Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) 1.25 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 41.67 °C/W VDD = 150V, ID = 10A VGS = 10V, RL = 15Ω 480 ns 1 Power F-MOS FETs 2SK2573 PD Ta Area of safe operation (ASO) Allowable power dissipation PD (W) ID Drain current ID (A) 160 Non repetitive pulse TC=25˚C IDP IAS L-load 102 t=1ms 10 DC 100ms 10ms 1 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink 140 120 100 (1) 80 60 40 20 Avalanche current IAS (A) 102 TC=25˚C 10 E=20mJ 1 (2) PD=3.0W (3) 1 102 10 103 0 Drain to source voltage VDS (V) 20 40 Drain to source ON-resistance RDS(on) (Ω) Drain current ID (A) 25 20 15 10 5 0 4 6 8 1.0 0.8 0.6 VGS=10V 0.4 15V 0.2 0 20 30 40 50 Drain current ID (A) VCC=150 VGS=10V TC=25˚C 700 8 6 4 2 600 500 td(off) 400 300 ton 200 tf 100 0 0 0 10 20 30 40 Drain current ID (A) 50 0 5 10 15 20 Drain current ID (A) 300 Coss 100 Crss 30 10 0 50 100 150 200 Drain to source voltage VDS (V) ton, tf, td(off) ID Switching time ton,tf,td(off) (µs) Forward transfer admittance |Yfs| (S) 10 800 10 f=1MHz TC=25˚C 1000 | Yfs | ID 12 10 Ciss 3000 0 VDS=25V TC=25˚C 1 L-load (mH) 10000 TC=25˚C 10 16 14 10–1 Ciss, Coss, Crss VDS 1.2 Gate to source voltage VGS (V) 2 80 100 120 140 160 RDS(on) ID VDS=25V TC=25˚C 2 60 Ambient temperature Ta (˚C) ID VGS 30 0 10–1 10–2 0 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10–1 10–1 25 Power F-MOS FETs 2SK2573 Rth(t) t Thermal resistance Rth(t) (˚C/W) 102 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–3 10–2 10–1 1 10 102 103 Time t (s) 3