ETC PNZ0106

Phototransistors
PNZ0106
Silicon NPN Phototransistor
Unit : mm
ø4.6±0.15
Glass lens
6.3±0.3
For optical control systems
Features
High sensitivity
12.7 min.
Fast response : tr = 3.5 µs (typ.)
Narrow directional sensitivity for effective use of light input
3-ø0.45±0.05
Signal mixing capability using base pin
2.54±0.25
0
0±
1.
Parameter
0±
0
3˚
45±
.1
5
.2
1.
Absolute Maximum Ratings (Ta = 25˚C)
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
30
V
Collector to base voltage
VCBO
40
V
Emitter to collector voltage
VECO
5
V
Emitter to base voltage
VEBO
5
V
3
2 1
1: Emitter
2: Base
2: Collector
ø5.75 max.
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
*2
min
Unit
100
nA
0.6
mA
800
nm
θ
Measured from the optical axis to the half power point
10
deg.
3.5
µs
Fall time
tf*2
VCE(sat)
0.3
max
1
VCE = 10V
tr*2
VCE = 10V, L = 100
lx*1
typ
λP
Rise time
Collector saturation voltage
*1
ICE(L)
Conditions
VCE = 10V
VCC = 10V, ICE(L) = 1mA, RL = 100Ω
ICE(L) = 1 mA, L = 1000 lx*1
µs
5.0
0.2
0.4
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT
RL
,,,,
,,
50Ω
(Output pulse)
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
Phototransistors
PNZ0106
PC — Ta
ICE(L) — VCE
120
ICE(L) — L
10 2
8
VCE = 10V
Ta = 25˚C
T = 2856K
60
40
20
20
40
60
Ambient temperature
80
L = 1000 lx
4
500 lx
2
300 lx
100 lx
0
100
700 lx
Ta (˚C )
0
4
8
12
Collector to emitter voltage
ICEO — Ta
10
1
10 –1
40
Ambient temperature
60
80
50
S (%)
40
80
60
40
0
200
120
30˚
40˚
40
50˚
30
60˚
70˚
400
600
800
1000
1200
Wavelength λ (nm)
Ta (˚C )
10 3
tf — ICE(L)
10 3
VCC = 10V
Ta = 25˚C
VCC = 10V
Ta = 25˚C
10 2
10 2
tr (µs)
60
80
tr — ICE(L)
20˚
Rise time
70
Relative sensitivity S(%)
90
0
Ambient temperature
100
80
VCE = 10V
Ta = 25˚C
20
Ta (˚C )
10˚
10 3
L (lx)
Spectral sensitivity characteristics
10 –1
Directivity characteristics
0˚
10 2
10
Illuminance
100
1
10 –2
– 40
100
1
VCE (V)
Relative sensitivity
ICE(L) (mA)
10
Collector photo current
Dark current
ICEO (nA)
10 2
20
10 –1
10 –2
VCE = 10V
T = 100 lx
VCE = 10V
0
1
ICE(L) — Ta
10 3
10 –2
– 20
50 lx
20
24
16
10
tf (µs)
0
6
RL = 1kΩ
10
Fall time
0
– 20
ICE(L) (mA)
80
Collector photo current
ICE(L) (mA)
100
Collector photo current
Collector power dissipation
PC (mW)
Ta = 25˚C
500Ω
100Ω
RL = 1kΩ
500Ω
10
100Ω
1
1
80˚
90˚
10 –1
10 –1
1
Collector photo current
2
10
10 2
ICE(L) (mA)
10 –1
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)