Phototransistors PNZ0158 Silicon NPN Phototransistor Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 2.4 1.5 Fast response : tr = 4 µs (typ.) 12.8 min. Wide spectral sensitivity, suited for detecting various kinds of LEDs Small size, thin side-view type package 1.7±0.2 0.8 0.9 2.8 3.9±0.3 Features High sensitivity Not soldered ø2.4 2-1.2±0.3 2-0.45±0.15 1 2 2.54 0.45±0.15 R1.2 R0.6 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) Conditions min VCE = 10V Unit 1 µA 4 mA VCE = 10V 800 nm θ Measured from the optical axis to the half power point 40 tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 4 10 µs 0.2 0.5 V ICE(L) = 1mA, L = 1000 1 max λP VCE(sat) VCE = 10V, L = 500 lx*1 typ 0.01 lx*1 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ0158 PC — Ta ICE(L) — VCE 80 60 40 20 0 – 20 0 20 40 Ambient temperature 60 80 L = 2000 lx 1750 lx 1500 lx 12 1250 lx 1000 lx 8 750 lx 500 lx 4 250 lx Ta (˚C ) 100 lx 0 4 8 20 10 1 10 –1 10 –2 10 –3 24 10 3 10 4 L (lx) Spectral sensitivity characteristics 100 VCE = 10V S (%) 10 –1 10 2 10 Illuminance Relative sensitivity 500 lx ICEO (µA) L = 1000 lx 10 1 Dark current VCE = 10V T = 2856K 1 VCE (V) ICEO — Ta 10 ICE(L) (mA) 10 –2 VCE = 10V Ta = 25˚C 80 60 40 20 0 40 Ambient temperature 80 10 –3 – 40 120 Ta (˚C ) 10˚ 50 40 30 20 40˚ 50˚ 60˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C 10 3 10 2 tr (µs) 60 30˚ Rise time 70 0 200 120 VCC = 10V Ta = 25˚C 10 3 Relative sensitivity S (%) 90 80 tr — ICE(L) 20˚ 100 80 40 Ambient temperature Directivity characteristics 0˚ 0 10 2 RL = 1kΩ tf (µs) 1 – 40 500Ω 10 100Ω 1 Fall time Collector photo current 16 Collector to emitter voltage ICE(L) — Ta 10 2 12 VCE = 10V Ta = 25˚C T = 2856K 10 2 16 0 100 Ta = 25˚C T = 2856K ICE(L) (mA) 100 ICE(L) — L Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 120 RL = 1kΩ 500Ω 10 100Ω 1 70˚ 80˚ 10 –1 10 –1 90˚ 10 –2 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –2 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)