Phototransistors PNZ0150 Silicon NPN Phototransistor Unit : mm For optical control systems 4.5±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High sensitivity 2.8 1.8 1.0 Wide spectral sensitivity, suited for detecting GaAs LEDs 12.8 min. 10.0 min. Low dark current Side-view type package 2-0.98±0.2 2-0.45±0.15 0.45±0.15 1 2.54 2 1.2 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 500 lx*1 1 typ max 0.01 1 3 Unit µA mA λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 35 deg. tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω Collector saturation voltage *2 min Peak sensitivity wavelength Response time *1 Conditions VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 4 10 µs 0.2 0.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ0150 PC — Ta ICE(L) — VCE 80 60 40 20 0 – 20 0 20 40 Ambient temperature 60 80 L = 2000 lx 1750 lx 1500 lx 12 1250 lx 1000 lx 8 750 lx 500 lx 4 250 lx Ta (˚C ) 100 lx 0 4 8 20 10 1 10 –1 10 –2 10 –3 24 Dark current 500 lx 10 3 10 4 L (lx) Spectral sensitivity characteristics 100 VCE = 10V S (%) ICEO (µA) L = 1000 lx 10 10 2 10 Illuminance 1 Relative sensitivity VCE = 10V T = 2856K 1 VCE (V) ICEO — Ta 10 ICE(L) (mA) 10 –1 10 –2 VCE = 10V Ta = 25˚C 80 60 40 20 1 – 40 0 40 Ambient temperature 80 10 –3 – 40 120 Ta (˚C ) 10˚ 50 40 30 20 50˚ 60˚ 600 800 1000 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 500Ω 10 100Ω 10 2 RL = 1kΩ 500Ω 10 100Ω 70˚ 80˚ 1200 tf — ICE(L) tf (µs) 40˚ 400 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 30˚ Rise time 70 0 200 120 VCC = 10V Ta = 25˚C 10 4 Relative sensitivity S (%) 90 80 tr — ICE(L) 20˚ 100 80 40 Ambient temperature Directivity characteristics 0˚ 0 Fall time Collector photo current 16 Collector to emitter voltage ICE(L) — Ta 10 2 12 VCE = 10V Ta = 25˚C T = 2856K 10 2 16 0 100 Ta = 25˚C T = 2856K ICE(L) (mA) 100 ICE(L) — L Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 120 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)