ETC PNZ0107

Phototransistors
PNZ0107, PNZ0108
Silicon NPN Phototransistors
PNZ0107
Unit : mm
ø4.6±0.15
Glass lens
6.3±0.3
For optical control systems
Features
Narrow directional sensitivity for effective use of light input
Fast response : tr = 5 µs (typ.)
12.7 min.
High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)
2-ø0.45±0.05
Signal mixing capability using base pin (PNZ0108)
2.54±0.25
0
0±
1.
TO-18 standard type package
1.
0±
0
3˚
45±
.1
5
.2
2 1
Absolute Maximum Ratings (Ta = 25˚C)
Unit
Collector to emitter voltage
VCEO
20
V
*
30
V
3
V
Collector to base voltage
VCBO
Emitter to collector voltage
VECO
Emitter to base voltage
VEBO*
5
V
IC
30
mA
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
Unit : mm
ø4.6±0.15
Glass lens
3-ø0.45±0.05
PNZ0108 only
2.54±0.25
3˚
0±
0.
1
45±
5
.2
0
0±
1.
1.
*
Collector power dissipation
PNZ0108
6.3±0.3
Ratings
12.7 min.
Symbol
Collector current
1: Emitter
2: Collector
ø5.75 max.
Parameter
3
2 1
ø5.75 max.
1: Emitter
2: Base
3: Collector
1
Phototransistors
PNZ0107/ PNZ0108
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
Conditions
ICEO
Collector photo current
ICE(L)
Peak sensitivity wavelength
VCE = 10V, L = 100
Measured from the optical axis to the half power point
10
deg.
VCC = 10V, ICE(L) = 5mA
5
µs
*2
RL = 100Ω
0.3
Switching time measurement circuit
VCC
(Output pulse)
,,,,
,,
90%
10%
td
tr
tf
PC — Ta
ICE(L) — VCE
80
40
ICE(L) (mA)
00
lx
50
0
l
30
x
0
l
20 x
0
lx
10
16
12
100 lx
Collector photo current
120
Ta = 25˚C
T = 2856K
=
160
V
ICE(L) — L
10 3
L
ICE(L) (mA)
20
Collector photo current
Collector power dissipation
PC (mW)
200
0.6
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
(Input pulse)
RL
µs
6
ICE(L) = 1mA, L = 500 lx*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
8
50 lx
4
VCE = 10V
Ta = 25˚C
T = 2856K
10 2
10
1
10 lx
0
– 20
0
20
40
60
80
Ambient temperature Ta (˚C )
2
mA
θ
VCE(sat)
Sig.OUT
15
nm
*2
50Ω
µA
5
*1
Sig.IN
Unit
2
900
tf
Collector saturation voltage
max
VCE = 10V
tr*2
Fall time
lx*1
typ
0.05
λP
Acceptance half angle
Rise time
min
VCE = 10V
100
0
0
4
8
12
16
20
24
Collector to emitter voltage VCE (V)
10 –1
1
10
10 2
Illuminance L (lx)
10 3
PNZ0107, PNZ0108
Phototransistors
ICEO — Ta
ICE(L) — Ta
10 2
10 2
VCE = 10V
L = 100 lx
T = 2856K
10 –2
0
20
40
Ambient temperature
60
80
10
1
– 40
100
Ta (˚C )
10˚
50
60
40
80
0
200
120
40˚
40
50˚
30
60˚
400
600
800
1000
1200
Wavelength λ (nm)
Ta (˚C )
tf — ICE(L)
VCC = 10V
Ta = 25˚C
VCC = 10V
Ta = 25˚C
10 4
10 3
10 3
tf (µs)
60
30˚
tr (µs)
70
40
10 4
Rise time
90
80
tr — ICE(L)
20˚
100
80
0
Ambient temperature
Directivity characteristics
0˚
VCE = 10V
Ta = 25˚C
20
10 2
RL = 1kΩ
Fall time
10 –3
– 20
Relative sensitivity
Collector photo current
10 –1
Relative sensitivity S(%)
ICEO (µA)
Dark current
1
S (%)
ICE(L) (mA)
VCE = 10V
10
Spectral sensitivity characteristics
100
500Ω
10
100Ω
10 2
RL = 1kΩ
500Ω
10
100Ω
70˚
80˚
1
1
90˚
10 –1
10 –2
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)
10 –1
10 –2
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)
3