ILD205T/206T/207T/211T/213T/217T Dual Phototransistor Small Outline Surface Mount Optocoupler FEATURES • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Isolation Test Voltage, 3000 VRMS • High Current Transfer Ratios ILD205T, 40 – 80% ILD206T, 63 –125% ILD207T, 100 – 200% ILD211T, 20% Minimum ILD213T, 100% Minimum ILD217T, 100% Minimum at 1.0 mA • High BVCEO, 70 V • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Laboratory File #E52744 (Code Letter Y) DESCRIPTION The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/6T/7T/11T/13T/17T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard of 30 volts. Maximum Ratings (Each Channel) Emitter Peak Reverse Voltage ..................................... 6.0 V Peak Pulsed Current (1.0 µs, 300 pps) ...........1.0 A Continuous Forward Current per Channel ....30 mA Power Dissipation at 25°C............................ 50 mW Derate Linearly from 25°C ....................0.66 mW/°C Detector Collector-Emitter Breakdown Voltage............... 70 V Emitter-Collector Breakdown Voltage.............. 7.0 V Power Dissipation per Channel .................. 125 mW Derate Linearly from 25°C ....................1.67 mW/°C Package Total Package Dissipation at 25°C Ambient (2 LEDs + 2 Detectors, 2 Channels)....... 300 mW Derate Linearly from 25°C ......................4.0 mW/°C Storage Temperature ...................–55°C to +150°C Operating Temperature ...............–55°C to +100°C Soldering Time at 260°C ............................. 10 sec. Dimensions in inches (mm) Pin 1 Anode 1 .120±.002 (3.05±.05) 8 Collector Cathode 2 7 Emitter C L .154±.002 Anode 3 (3.91±.05) .240 (6.10) 6 Collector Cathode 4 5 Emitter .016 (.41) .230±.002 (5.84±.05) 40° .015±.002 (.38±.05) .058 (1.49) .125 (3.18) .008 (.20) .004 (.10) .008 (.20) .050 (1.27) typ. .040 (1.02) 7° 5° max. R.010 (.25) max. .020±.004 (.5±.10) 2 plcs. Lead Coplanarity ±.001 (.04) max. Table 1. Characteristics TA=25°C Parameter Min. Typ. Max. Unit Condition Forward Voltage — 1.2 1.55 V IF=10 mA Reverse Current — 0.1 100 µA VR=6.0 V Capacitance — 25 — pF VR=0 BVCEO 70 — — V IC=10 µA BVECO 7.0 — — V IE=10 µA ICEO — 5.0 50 nA VCE=10 V IF=0 — 10 — pF VCE=0 % IF=10 mA Emitter Detector Breakdown Voltage Collector-Emitter Capacitance Package DC Current Transfer, ILD205 VCE=5.0 V ILD206 40 — 80 63 — 125 ILD207 100 — 200 ILD211 20 — — ILD213 100 — — ILD205 13 30 — ILD206 22 45 — ILD207 34 70 — ILD217 IF=1.0 mA 100 120 — Collector-Emitter Saturation Voltage VCE(sat) — — 0.4 V IF=10 mA IC=2.5 mA Capacitance, Input to Output — 0.5 — pF — Isolation Test Voltage 3000 — VRMS t=1.0 sec. Resistance, Input to Output — 100 — GΩ — Turn-on Time — 5.0 — µs Turn-off Time — 4.0 — µs IC=2.0 mA RL= 100 Ω VCC=5.0 V 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–181 February 12, 2001-10 Figure 1. Forward current versus forward voltage Figure 5. Switching speed versus load resistor Switching speed (µs) 103 IF=10 mA Pulse width=100ms Duty cycle=50% Toff 102 Ton 101 100 .1 1 10 100 Rl - Load Resistor (KΩ) NIc Normalized Collector Current Figure 2. Collector-emitter current versus temperature 1.2 1.0 IF=10 mA 0.8 0.6 IF=5 mA Coll current normalized @ IF=10 mA VCE=10 V TA=25°C 0.4 0.2 IF=1 mA 0.0 0 2 4 6 8 10 12 V CE-Collector to Emitter Voltage (V) Figure 7. Power dissipation versus ambient temperature 1.2 Package Power Dissipation (mw) NCTRce - Normalized CTRce Figure 3. Normalized CTRce versus forward current CTR normalized @ IF = 10 mA TA = 25°C 1.0 0.8 VCE=5 V 0.6 0.4 VCE=0.4 V 0.2 0.0 .01 .1 1 10 IF - LED Current - (mA) 100 Figure 4. CTR (normalized) versus temperature NCTRce - normalized CTRce Figure 6. Collector current versus temperature 200 Total pkg 150 100 50 per channel 0 25 50 75 100 125 TA - Ambient Temperature (°C) Figure 8. Switching time test schematic and waveform 1.2 VCC=5 V 1.0 Input IF=10 mA 0.8 0.6 IF=5 mA 0.4 0.2 IF=1 mA RL VOUT INPUT 0 OUTPUT 0 CTR (nonsat) normalized @ IF=10 mA VCE=10 V TA=25°C ton toff tpdon 10% tpdof td tr tr ts 10% 50% 50% 90% 90% 0.0 20 40 60 80 TA - Temperature (°C) 100 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) ILD205T/206T/207T/211T/213T/217T 2–182 February 12, 2001-10