STMICROELECTRONICS STPS61150CW

STPS61150CW
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
150 V
Tj (max)
175°C
VF (max)
0.67 V
A1
K
A2
FEATURES AND BENEFITS
■
■
■
■
■
A2
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
HIGH FREQUENCY OPERATION
K
A1
TO-247
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Value
Unit
Repetitive peak reverse voltage
150
V
RMS forward current
80
A
30
60
A
500
A
31800
W
- 65 to + 175
°C
175
°C
10000
V/µs
IF(AV)
Average forward current
Tc = 150°C
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
PARM
Repetitive peak avalanche power
tp = 1µs
Tstg
Tj
dV/dt
* :
Storage temperature range
Per diode
Per device
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
October 2003 - Ed: 1A
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STPS61150CW
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
Junction to case
Rth(j-c)
Junction to case
Value
0.9
0.6
0.3
Per diode
Total
Coupling
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Tests Conditions
Reverse leakage
current
Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Min.
Typ.
7
7
VR = VRRM
IF =
IF =
IF =
IF =
30 A
30 A
60 A
60 A
0.63
0.76
Max.
20
25
0.84
0.67
0.92
0.8
Unit
µA
mA
V
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.54 x IF(AV) + 0.0043 IF (RMS)
Fig. 1: Conduction losses versus average current
(per diode).
Fig. 2: Normalized avalanche power derating
versus pulse duration.
PF(AV)(W)
PARM(tp)
PARM(1µs)
30
δ = 0.2
δ = 0.1
25
δ = 0.5
1
δ = 0.05
δ=1
20
0.1
15
10
0.01
T
5
IF(AV)(A)
δ=tp/T
0
0
5
10
15
20
25
30
tp
35
tp(µs)
0.001
0.01
40
Fig. 3: Normalized avalanche power derating
versus junction temperature.
0.1
1
10
100
1000
Fig. 4: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(AV)(A)
PARM(tp)
PARM(25°C)
35
Rth(j-a)=Rth(j-c)
1.2
30
1
25
0.8
20
0.6
15
Rth(j-a)=15°C/W
0.4
10
T
0.2
5
Tj(°C)
δ=tp/T
0
25
50
75
100
125
150
0
0
2/4
25
Tamb(°C)
tp
50
75
100
125
150
175
STPS61150CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
IM(A)
Zth(j-c)/Rth(j-c)
400
1.0
350
0.9
0.8
300
0.7
250
0.6
δ = 0.5
Tc=50°C
200
0.5
Tc=75°C
150
0.4
δ = 0.2
0.3
δ = 0.1
T
100
Tc=125°C
IM
0.2
Single pulse
50
t
0.1
t(s)
δ=0.5
δ=tp/T
tp(s)
tp
0.0
0
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
C(pF)
1.E+05
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+04
Tj=125°C
1.E+03
Tj=100°C
Tj=75°C
1.E+02
1000
Tj=50°C
1.E+01
Tj=25°C
1.E+00
VR(V)
VR(V)
1.E-01
10
30
50
70
100
90
110
130
150
1
10
100
1000
Fig. 9: Forward voltage drop versus forward
current (per diode).
IFM(A)
100.0
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10.0
Tj=25°C
(maximum values)
1.0
VFM(V)
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
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STPS61150CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
REF.
V
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
■
■
■
■
E
=
Millimeters
Min. Typ.
A
4.85
D
2.20
E
0.40
F
1.00
F1
3.00
F2
2.00
F3 2.00
F4 3.00
G
10.90
H 15.45
L 19.85
L1 3.70
L2
18.50
L3 14.20
L4
34.60
L5
5.50
M
2.00
V
5°
V2
60°
Dia. 3.55
Inches
Max.
5.15
2.60
0.80
1.40
2.40
3.40
15.75
20.15
4.30
14.80
3.00
3.65
Min. Typ. Max.
0.191
0.203
0.086
0.102
0.015
0.031
0.039
0.055
0.118
0.078
0.078
0.094
0.118
0.133
0.429
0.608
0.620
0.781
0.793
0.145
0.169
0.728
0.559
0.582
1.362
0.216
0.078
0.118
5°
60°
0.139
0.143
Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS61150CW
STPS61150CW
TO-247
4.4g
30
Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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