BSS 129 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 240 V ID 0.15 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 Tape and Reel Information 3 Pin Configuration Marking Package BSS 129 Q62702-S015 E6288: 1500 pcs/reel; 2 reels/carton; gate first 1 2 3 G D S SS 129 TO-92 BSS 129 Q67000-S116 E6296: 1500 pcs/reel; 2 reels/carton; source first Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 kΩ VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 37 ˚C ID 0.15 A Pulsed drain current, TA = 25 ˚C ID puls 0.45 Max. power dissipation, TA = 25 ˚C Ptot 1.0 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Thermal resistance, chip-ambient (without heat sink) RthJA ≤ 125 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Data Sheet 1 05.99 BSS 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 240 – – − 1.8 − 1.2 − 0.7 – – – – 100 200 Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS(th) VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 240 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-resistance VGS = 0 V, ID = 0.014 A RDS(on) V nA µA nA – 10 100 Ω – 7.0 20 0.14 0.2 – – 110 150 – 20 30 – 7 10 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.25 A Input capacitance gfs S Ciss VGS = 0, VDS = 25 V, f = 1 MHz pF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) td(on) – 4 6 VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.25 A tr – 10 15 Turn-off time toff, (toff = td(off) + tf) td(off) – 15 20 VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.25 A tf – 25 35 Data Sheet 2 ns 05.99 BSS 129 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 0.15 – – 0.45 – 0.7 1.4 Reverse Diode Continuous reverse drain current TA = 25 ˚C IS Pulsed reverse drain current ISM A TA = 25 ˚C Diode forward on-voltage VSD V IF = 0.3 A, VGS = 0 VGS(th) Grouping Range of VGS(th) Symbol ∆VGS(th) Threshold Voltage selected in groups 1): VGS(th) F G A B C D Limit Values Unit Test Condition – min. max. – 0.2 V – 1.600 – 1.700 – 1.800 – 1.900 – 2.000 – 2.100 – 1.400 – 1.500 – 1.600 – 1.700 – 1.800 – 1.900 V V V V V V VDS1 = 0.2 V; VDS2 = 3 V; ID = 10 µA 1) A specific group cannot be ordered seperately. Each reel only contains transistors from one group. Data Sheet 3 05.99 BSS 129 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Data Sheet 4 05.99 BSS 129 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.014 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Data Sheet 5 05.99 BSS 129 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Data Sheet Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) 6 05.99