Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS(on) 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated Type Package Ordering Code Packaging SPD10N10 P-TO252 Q67040-S4119-A2 Tape and Reel SPU10N10 P-TO251 Q67040-S4111-A2 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C 10 TC = 100 ˚C 6.3 Pulsed drain current Unit IDpulse 40 EAS 59 EAR 4 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 40 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 10 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 10 A, VDS = 0 V, di/dt = 200 A/µs TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 SPD 10N10 Thermal Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - 3.1 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 100 - - Gate threshold voltage, VGS = VDS ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 100 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 6 A - 0.15 0.2 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 10N10 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 3 4.3 - S Ciss - 400 530 pF Coss - 125 180 Crss - 70 105 t d(on) - 10 15 tr - 45 70 t d(off) - 55 75 tf - 40 55 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Ω Rise time VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Ω Turn-off delay time VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Ω Fall time VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Ω Data Sheet 3 05.99 SPD 10N10 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 4.5 7 Q gd - 29.6 45 Qg - 46 69 V(plateau) - 6.8 - V IS - - 10 A I SM - - 40 VSD - 1.4 1.6 V t rr - 170 255 ns Q rr - 0.3 0.45 µC Dynamic Characteristics Gate to source charge nC VDD = 80 V, ID = 10 A Gate to drain charge VDD = 80 V, ID = 10 A Gate charge total VDD = 80 V, ID = 10 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, ID = 10 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 20 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 SPD 10N10 Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD10N10 SPD10N10 45 11 W A 9 35 7 ID Ptot 8 30 25 6 20 5 4 15 3 10 2 5 1 0 0 20 40 60 80 100 ˚C 120 0 0 160 20 40 60 80 100 120 TC 160 TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 2 ˚C SPD10N10 10 1 SPD10N10 K/W tp = 43.0µs A 100 µs 10 0 1 ms ) =V ID DS /I Z thJC D 10 1 DS (on 10 -1 R D = 0.50 10 ms 10 0.20 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 -1 10 10 0 10 1 10 2 V 10 10 -3 -7 10 3 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 SPD 10N10 Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD10N10 SPD10N10 Ptot = 40W A 0.65 Ω l k i 20 VGS [V] a 4.0 18 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 f g 7.0 h 7.5 i 8.0 j 8.5 k 9.0 h ID 16 g 14 12 10 e 8 d l 6 6 8 e f g h i 10 12 14 16 0.45 0.40 0.35 0.30 0.25 j 0.20 10.0 k 0.15 0.10 a 4 d 0.50 b 2 2 c 0.55 c 4 0 0 b j RDS(on) 24 0.05 18 V 21 l VGS [V] = b 4.5 0.00 0 VDS c 5.0 d 5.5 4 e f 6.0 6.5 8 g 7.0 12 h i 7.5 8.0 j 9.0 16 k l 10.0 20.0 A 24 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs gfs = f(ID ); Tj = 25˚C VDS ≥ 2 x I D x RDS(on) max parameter: gfs 7 24 A S 20 18 5 gfs ID 16 14 4 12 3 10 8 2 6 4 1 2 0 0 1 2 3 4 5 6 7 8 V 0 0 10 VGS Data Sheet 2 4 6 8 10 12 14 16 18 A 22 ID 6 05.99 SPD 10N10 Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 1 mA parameter : ID = 6 A, VGS = 10 V SPD10N10 5.0 V 0.75 Ω 4.4 4.0 VGS(th) RDS(on) 0.60 0.55 0.50 0.45 3.6 max 3.2 2.8 0.40 2.4 typ 0.35 2.0 98% 0.30 1.6 0.25 typ min 0.20 1.2 0.15 0.8 0.10 0.4 0.05 0.00 -60 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 200 ˚C 160 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF SPD10N10 A 10 3 IF C 10 1 C iss Coss 10 2 10 0 Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 SPD 10N10 Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 10 A, V DD = 25 V VGS = f (QGate ) RGS = 25 Ω parameter: ID puls = 10 A SPD10N10 60 16 mJ V 50 12 40 VGS EAS 45 35 30 0,2 VDS max 10 0,8 VDS max 8 25 6 20 15 4 10 2 5 0 20 40 60 80 100 ˚C 120 0 0 160 Tj 10 20 30 40 50 70 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD10N10 120 V V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99