SPD 08N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS(on) 0.1 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging SPD08N05L P-TO252 Q67040-S4134 Tape and Reel SPU08N05L P-TO251 Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Pin 1 Pin 2 Pin 3 G D S Value A ID TC = 25 ˚C 8.4 TC = 100 ˚C 5.9 Pulsed drain current Unit IDpulse 34 EAS 35 Avalanche energy, periodic limited by Tjmax EAR 2.4 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 24 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.4 A, VDD = 25 V, RGS = 25 Ω kV/µs IS = 8.4 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 06.99 SPD 08N05L Thermal Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - 6.25 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values K/W Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 10 µA Zero gate voltage drain current µA IDSS VDS = 50 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 5.9 A - 0.125 0.15 VGS = 10 V, ID = 5.9 A - 0.08 0.1 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 08N05L Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. g fs 3 6.2 - S Ciss - 250 315 pF Coss - 80 100 Crss - 45 56 td(on) - 20 30 tr - 40 60 td(off) - 25 40 tf - 20 30 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 5.9 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Rise time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Fall time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω Data Sheet 3 06.99 SPD 08N05L Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 1 1.5 Qgd - 3.5 5.4 Qg - 9 14 V(plateau) - 4 - V IS - - 8.4 A I SM - - 34 VSD - 1.05 1.8 V t rr - 50 75 ns Q rr - 0.085 0.13 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 8.4 A Gate to drain charge VDD = 40 V, ID = 8.4 A Gate charge total VDD = 40 V, ID = 8.4 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 8.4 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 16.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 06.99 SPD 08N05L Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD08N05L SPD08N05L 10 26 W A 22 8 20 7 16 ID Ptot 18 6 14 5 12 10 4 8 3 6 2 4 1 2 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 2 SPD08N05L 10 1 K/W tp = 2.7µs A SPD08N05L 10 0 ) = V ID DS /I D Z thJC 10 µs 10 1 10 -1 DS ( on 100 µs R D = 0.50 0.20 10 0 0.10 1 ms 10 -2 10 ms 0.05 single pulse 0.02 DC 0.01 10 -1 -1 10 10 0 10 1 V 10 10 -3 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 06.99 SPD 08N05L Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD08N05L SPD08N05L Ptot = 24W A 0.50 l k ij h Ω g 16 14 ID b c d e f VGS [V] a 2.5 b 3.0 f c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 12 e 10 8 i 6.5 d j 7.0 k 8.0 l 10.0 6 0.40 RDS(on) 20 0.35 0.30 0.25 0.20 0.15 c 4 g 2 b 0.05 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 VDS h j l ki 0.10 VGS [V] = b 3.0 c 3.5 2 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 4 6 8 10 12 k l 8.0 10.0 A 16 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on)max gfs = f(ID ); Tj = 25˚C parameter: gfs 25 8 A gfs ID S 15 4 10 2 5 0 0 1 2 3 4 5 6 V 0 0 8 VGS Data Sheet 2 4 6 8 10 A 14 ID 6 06.99 SPD 08N05L Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 10 µA parameter : ID = 5.9 A, VGS = 4.5 V SPD08N05L 3.0 V 0.55 Ω 2.4 VGS(th) RDS(on) 0.45 0.40 0.35 2.2 2.0 1.8 1.6 0.30 1.4 0.25 1.2 98% 0.20 1.0 typ max 0.8 0.15 0.6 0.10 0.4 0.05 0.2 0.00 -60 typ min 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 SPD08N05L A pF C iss C IF 10 1 10 2 C oss 10 0 Crss Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 06.99 SPD 08N05L Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 8.4 A, VDD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 8.4 A SPD08N05L 40 16 V mJ 12 VGS EAS 30 25 20 10 8 0,2 VDS max 15 6 10 4 5 2 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 2 4 6 0,8 VDS max 8 10 14 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD08N05L 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 06.99