ETC UNR5174

Transistors with built-in Resistor
UNR5174
Silicon PNP epitaxial planar transistor
For digital circuits
0.15+0.10
–0.05
2.1±0.1
5°
1.25±0.10
0.9+0.2
–0.1
• High forward current transfer ratio hFE
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing
0.9±0.1
3
■ Features
2
0.2±0.1
1
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Symbol
Rating
Unit
Collector to base voltage
VCBO
−50
V
Collector to emitter voltage
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(0.425)
Unit : mm
0.3+0.1
–0.0
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 7P
Internal Connection
C
R1
(10 kΩ)
B
R2
E
(47 kΩ)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−50
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
− 0.1
ICEO
VCE = −50 V, IB = 0
− 0.5
IEBO
VEB = −6 V, IC = 0
− 0.2
mA
hFE
VCE = −10 V, IC = −5 mA
− 0.25
V
− 0.2
V
kΩ
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
VCE(sat)
V
V
80
IC = −10 mA, IB = − 0.3 mA
High-level output voltage
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Low-level output voltage
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
−4.9
V
Input resistance
R1
−30%
10
+30%
Resistance ratio
R1 / R2
0.17
0.21
0.25
0.95
1.2
Forward voltage (DC)
VF
IF = 100 mA
Gain bandwidth product
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
Publication date: May 2002
SJH00046AED
µA
80
V
MHz
1
UNR5174
140
−120
120
IB = −1.0 mA
80
60
40
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
20
0
0
20
40
60
80 100 120 140 160
− 0.1 mA
0
hFE  IC
200
25°C
100
50
0
−1
−10
−100
−1 000
Collector current IC (mA)
1
0
Collector to base voltage VCB (V)
Input voltage VIN (V)
−1
−100
Output current IO (mA)
2
25°C
− 0.01
−1
−10
−100
SJH00046AED
−1 000
Collector current IC (mA)
IO  VIN
−5 −10 −15 −20 −25 −30 −35 −40
VO = − 0.2 V
Ta = 25°C
−10
−25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−10
− 0.1
−1
−12
Ta = 75°C
−100
VIN  IO
−100
−10
−1
Cob  VCB
−25°C
150
−8
Collector output capacitance Cob (pF)
Ta = 75°C
−6
10
VCE = −10 V
250
−4
IC / IB = 10
− 0.1
Output current IO (mA)
300
−2
−10
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
DC current gain hFE
Ta = 25°C
−100
100
0
VCE(sat)  IC
Collector to emitter saturation voltage VCE(sat) (V)
IC  VCE
−140
Collector current IC (mA)
Total power dissipation PT (mW)
PT  T a
160
−10
−1
− 0.1
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
Input voltage VIN (V)
−1.6
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be ex-ported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY