PANASONIC NP0G3D2

Transistors with built-in Resistor
NP0G3D2
Silicon PNP epitaxial planar transistor (Tr1)
Silicon NPN epitaxial planar transistor (Tr2)
Unit: mm
For digital circuits
0.12+0.03
-0.02
4
0.80±0.05
1
2
3
0.10
• Two elements incorporated into one package
• Suitable for high density package and downsizing of the equipment
• Automatic insertion with the taping is possible
0 to 0.02
0.10
5
■ Features
1.00±0.05
6
(0.35) (0.35)
1.00±0.05
■ Basic Part Number of Element
Display at No.1 lead
0.37+0.03
-0.02
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Symbol
Rating
Unit
Collector to base voltage
VCBO
−50
V
Collector to emitter voltage
VCEO
−50
V
IC
−80
mA
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
80
mA
Total power dissipation *
PT
125
mW
Collector current
Tr2
Overall
(0.10)
• UNR31AT × UNR32AL
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1: Base (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Emitter (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 3B
Internal Connection
6
5
4
Tr1
Tr2
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
1
Publication date: July 2002
SJH00051AED
2
3
1
NP0G3D2
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−50
Collector to emittter voltage
VCEO
IC = −2 mA, IB = 0
−50
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
ICEO
VCE = −50 V, IB = 0
− 0.5
Emitter cutoff current
IEBO
VEB = −6 V, IC = 0
− 0.2
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector to emitter saturation voltage
VCE(sat)
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Low level output voltage
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
R1
Resistance ratio
R1 / R2
Gain bandwidth product
fT
V
− 0.1
80
IC = −10 mA, IB = − 0.3 mA
High level output voltage
Input resistance
V
400

− 0.25
V
− 0.2
V
+30%
kΩ
−4.9
−30%
VCB = −10 V, IE = 1 mA, f = 200 MHz
µA
V
22
0.47

80
MHz
• Tr2
Parameter
Symbol
Conditions
Typ
Max
Unit
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
50
V
Collector to emittter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
0.1
ICEO
VCE = 50 V, IB = 0
0.5
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
Collector to emitter saturation voltage
VCE(sat)
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Low level output voltage
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1 / R2
fT
PT  Ta
Total power dissipation PT (mW)
140
120
100
80
60
40
20
0
20
40
60
80
0.25
0.8
VCB = 10 V, IE = −2 mA, f = 200 MHz
100 120 140
Ambient temperature Ta (°C)
SJH00051AED
µA
mA

4.9
−30%
Common characteristics chart
0
2.0
20
IC = 10 mA, IB = 0.3 mA
High level output voltage
Gain bandwidth product
2
Min
V
V
0.2
V
4.7
+30%
kΩ
1.0
1.2
150

MHz
NP0G3D2
Characteristics charts of Tr1
IC  VCE
− 0.5 mA
− 0.4 mA
−70
−60
− 0.3 mA
−50
−40
− 0.2 mA
−30
−20
− 0.1 mA
−10
Ta = 25°C
0
0
−2
−4
−6
−8
−10
−12
−1
Ta = 75°C
− 0.1
−25°C
25°C
− 0.01
− 0.1
−16
−24
−25°C
150
100
50
−10
0
−1
−100
−32
−40
Collector to base voltage VCB (V)
−100
Input voltage VIN (V)
VO = −5 V
Ta = 25°C
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 −1.6
Input voltage VIN (V)
SJH00051AED
−100
VIN  IO
−1
− 0.1
−10
Collector current IC (mA)
IO  VIN
Output current IO (mA)
Collector output capacitance Cob (pF)
−8
25°C
IC / IB = 10
−1
−10
f = 1 MHz
Ta = 25°C
0
200
Collector current IC (mA)
Cob  VCB
1
VCE = −10 V
Ta = 75°C
Collector to emitter voltage VCE (V)
10
hFE  IC
250
Forward current transfer ratio hFE
IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA
−80
Collector current IC (mA)
VCE(sat)  IC
−10
Collector to emitter saturation voltage VCE(sat) (V)
−90
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
−1
−10
−100
Output current IO (mA)
3
NP0G3D2
Characteristics charts of Tr2
IC  VCE
Collector current IC (mA)
0.6 mA
0.5 mA
0.4 mA
70
60
50
0.3 mA
40
30
0.2 mA
20
10
Ta = 25°C
0
0
2
4
6
8
10
IC / IB = 10
0.1
Ta = 125°C
−25°C
25°C
−10
20
30
40
Collector to base voltage VCB (V)
4
25°C
100
−25°C
80
60
40
1
10
VIN  IO
10
Input voltage VIN (V)
VO = 5 V
Ta = 25°C
10
1
0.1
0
0.5
1.0
1.5
2.0
Input voltage VIN (V)
SJH00051AED
100
Collector current IC (mA)
IO  VIN
Output current IO (mA)
Collector output capacitance Cob (pF)
10
120
0
−100
100
f = 1 MHz
Ta = 25°C
0
140
Collector current IC (mA)
Cob  VCB
1
Ta = 125°C
160
20
Collector to emitter voltage VCE (V)
10
VCE = 10 V
180
0.01
−1
12
hFE  IC
200
Forward current transfer ratio hFE
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
80
VCE(sat)  IC
1
Collector to emitter saturation voltage VCE(sat) (V)
90
2.5
VO = 0.2 V
Ta = 25°C
1
0.1
1
10
Output current IO (mA)
100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL