Composite Transistors XP0421M Silicon NPN epitaxial planar transistor 0.2±0.05 5 6 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number of Element • UNR121M (UN121M) × 2 elements 0.9±0.1 Rating Unit VCBO 50 V of Collector to emitter voltage VCEO 50 V element Collector current IC 100 mA Total Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Symbol Collector to base voltage 0.9+0.2 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: FH Internal Connection 6 5 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter 0.2±0.1 1.25±0.10 2.1±0.1 • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half Parameter 0.12+0.05 –0.02 4 ■ Features Rating Unit: mm (0.425) For digital circuits/switching Symbol Conditions Min 4 Tr2 2 Typ 3 Max Unit Collector to base voltage VCBO IC = 10 µA, IE = 0 50 Collector to emittter voltage VCEO IC = 2 mA, IB = 0 50 Collector cutoff current ICBO VCB = 50 V, IE = 0 0.1 ICEO VCE = 50 V, IB = 0 0.5 IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA 0.25 V Emitter cutoff current DC current gain Collector to emitter saturation voltage VCE(sat) VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Low level output voltage VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R2 Gain bandwidth product fT V µA 80 IC = 10 mA, IB = 0.3 mA High level output voltage Input resistance V 4.9 −30% V 2.2 0.2 V +30% kΩ 0.047 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) The part number in the parenthesis shows conventional part number. Publication date: May 2002 SJJ00174AED 1 XP0421M IC VCE IB = 1.0 mA 0.9 mA 0.8 mA 120 150 100 100 0.3 mA 80 0.2 mA 60 40 0.1 mA 20 0 20 40 60 0 80 100 120 140 160 0 2 4 hFE IC −25°C 200 150 100 50 0 100 1 000 Collector current IC (mA) 5 10 15 20 25 Input voltage VIN (V) 0.01 0.1 1 1 10 100 Output current IO (mA) SJJ00174AED 10 100 IO VIN 30 35 40 Collector to base voltage VCB (V) 10 25°C −25°C VO = 5 V Ta = 25°C 100 10 1 0 VO = 0.2 V Ta = 25°C 1 Ta = 75°C 1 000 1 VIN IO 100 0.1 0.1 0.1 Collector current IC (mA) Output current IO (A) 25°C 250 10 12 f = 1 MHz Ta = 25°C Collector output capacitance Cob (pF) Ta = 75°C 1 10 10 VCE = 10 V 300 8 IC / IB = 10 Cob VCB 400 350 6 1 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) DC current gain hFE 0.7 mA 0.6 mA 0.5 mA 0.4 mA 50 0 2 VCE(sat) IC 200 Collector current IC (mA) Total power dissipation PT (mW) 140 Collector to emitter saturation voltage VCE(sat) (V) PT T a 250 0 0.5 1 1.5 2 Input voltage VIN (V) 2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY