PANASONIC UNR32A6

Transistors with built-in Resistor
UNR32A6
Silicon NPN epitaxial planar transistor
Unit: mm
0.10+0.05
–0.02
0.33+0.05
–0.02
For digital circuits
1
0.23+0.05
–0.02
2
(0.40) (0.40)
0.80±0.05
1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
0.15 min.
0.15 min.
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
5°
■ Features
1.20±0.05
0.80±0.05
3
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.15 max.
Symbol
0 to 0.01
Parameter
0.52±0.03
5°
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: HD
Internal Connection
R1 (4.7 kΩ)
B
C
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
460

0.25
V
Collector-emitter saturation voltage
VCE(sat)
Conditions
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Typ
160
IC = 10 mA, IB = 0.3 mA
Output voltage high level
Input resistance
Min
4.9
−30%
VCB = 10 V, IE = −2 mA, f = 200 MHz
Max
Unit
V
4.7
150
0.2
V
+30%
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJH00064AED
1
UNR32A6
IC  VCE
Ta = 25°C
80
0.9 mA
0.8 mA
100
Collector current IC (mA)
Total power dissipation PT (mW)
VCE(sat)  IC
90
80
60
40
70
IB = 1.0 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
60
50
0.2 mA
40
30
0.1 mA
20
20
10
0
0
20
40
60
80
0
100 120 140
0
Ambient temperature Ta (°C)
2
4
25°C
200
100
1
10
100
10
1
0
10
20
Input voltage VIN (V)
VO = 0.2 V
Ta = 25°C
1
1
10
100
Output current IO (mA)
2
−25°C
25°C
0.1
0.01
1
10
SJH00064AED
100
1 000
Collector current IC (mA)
100
f = 1 MHz
Ta = 25°C
VIN  IO
0.1
Ta = 85°C
1
IO  VIN
30
Collector-base voltage VCB (V)
Collector current IC (mA)
10
12
Output current IO (mA)
Forward current transfer ratio hFE
VCE = 10 V
−25°C
0
10
IC / IB = 10
Cob  VCB
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
hFE  IC
300
8
10
Collector-emitter voltage VCE (V)
400
Ta = 85°C
6
Collector-emitter saturation voltage VCE(sat) (V)
PT  Ta
120
40
VO = 5 V
Ta = 25°C
10
1
0.1
0
0.5
1.0
1.5
2.0
Input voltage VIN (V)
2.5
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL