Transistors with built-in Resistor UNRF1AM Silicon PNP epitaxial planar transistor Unit: mm 3 • Suitable for high density package and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.50 mm) 2 1 0.39+0.01 −0.03 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.25±0.05 1 0.50±0.05 0.25±0.05 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 For digital circuits Symbol Rating Unit Rating Collector to base voltage VCBO −50 V of Collector to emitter voltage VCEO −50 V element Collector current IC −80 mA Overall Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 3 2 0.05±0.03 0.65±0.01 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 1S Internal Connection R1 (2.2 kΩ) B R2 (47 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emittter voltage VCEO IC = −2 mA, IB = 0 −50 V Collector cutoff current ICBO VCB = −50 V, IE = 0 − 0.1 ICEO VCE = −50 V, IB = 0 − 0.5 Emitter cutoff current IEBO VEB = −6 V, IC = 0 Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA Collector to emitter saturation voltage VCE(sat) VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Low level output voltage VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R2 Gain bandwidth product Publication date: July 2002 fT − 0.25 −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz SJH00060AED mA 80 IC = −10 mA, IB = − 0.3 mA High level output voltage Input resistance − 0.2 µA V V 2.2 − 0.2 V +30% kΩ 0.047 80 MHz 1 UNRF1AM IC VCE −90 − 0.9 mA − 0.8 mA IB = −1.0 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA 100 Collector current IC (mA) Total power dissipation PT (mW) −80 VCE(sat) IC 80 60 40 −10 −70 −60 − 0.3 mA −50 − 0.2 mA −40 −30 − 0.1 mA −20 20 −10 Ta = 25°C 0 0 20 40 60 80 0 100 120 140 0 −4 −6 hFE IC 10 25°C 200 −25°C 150 100 50 0 − 0.1 −1 −10 −100 Collector current IC (mA) 0 −5 −10 −15 −20 −25 −30 −35 −40 Collector to base voltage VCB (V) Input voltage VIN (V) VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −1 −10 −100 Output current IO (mA) 2 −25°C − 0.1 25°C − 0.01 −1 −10 −100 Collector current IC (mA) −100 −10 −1 VO = −5 V Ta = 25°C 1 VIN IO −100 Ta = 85°C IO VIN f = 1 MHz Ta = 25°C Collector output capacitance Cob (pF) Ta = 85°C 250 −12 Output current IO (mA) VCE = −10 V −10 −1 Cob VCB 350 300 −8 IC / IB = 10 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) Forward current transfer ratio hFE −2 Collector to emitter saturation voltage VCE(sat) (V) PT Ta 120 SJH00060AED − 0.1 0 − 0.5 −1.0 −1.5 −2.0 −2.5 Input voltage VIN (V) −3.0 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL