ETC XP03390

Composite Transistors
XP03390
Silicon NPN epitaxial planar transistor (Tr1)
Silicon PNP epitaxial planar transistor (Tr2)
0.20±0.05
5
5˚
1
3
2
(0.65) (0.65)
1.3±0.1
2.0±0.1
■ Basic Part Number of Element
• UNR1213 (UN1213) + UNR1114 (UN1114)
0.9±0.1
Rating
Unit
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
IC
100
mA
Tr2
Collector to base voltage
VCBO
−50
V
Collector to emitter voltage
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
150
mW
Total
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
Symbol
Collector to base voltage
0.9+0.2
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Collector current
0.2±0.1
1.25±0.10
2.1±0.1
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
Tr1
0.12+0.05
–0.02
4
■ Features
Parameter
Unit: mm
(0.425)
For digital circuits
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
: Base (Tr2)
SMini5-G1 Package
Marking Symbol: EX
Internal Connection
5
4
Tr1
Tr2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
2
3
• Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
0.1
ICEO
VCE = 50 V, IB = 0
0.5
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
DC current gain
hFE
VCE = 10 V, IC = 5 mA
Collector to emitter saturation voltage
VCE(sat)
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Low-level output voltage
VOL
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1/R2
Gain bandwidth product
fT
mA
0.25
V
4.9
−30%
0.8
VCB = 10 V, IE = −2 mA, f = 200MHz
0.1
80
IC = 10 mA, IB = 0.3 mA
High-level output voltage
µA
V
0.2
V
47
+30%
kΩ
1.0
1.2
150
MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SJJ00236AED
1
XP03390
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−50
V
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
V
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
− 0.1
ICEO
VCE = −50 V, IB = 0
− 0.5
Emitter cutoff current
IEBO
VEB = −6 V, IC = 0
DC current gain
hFE
VCE = −10 V, IC = −5 mA
Collector to emitter saturation voltage
High-level output voltage
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Low-level output voltage
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1/R2
Gain bandwidth product
mA
− 0.25
V
−4.9
V
− 0.2
V
−30%
10
+30%
kΩ
0.17
0.21
0.25
VCB = −10 V, IE = 1 mA, f = 200MHz
fT
− 0.2
80
IC = −10 mA, IB = − 0.3 mA
VCE(sat)
µA
80
MHz
Common characterisitcs chart
PT  T a
Total power dissipation PT (mW)
175
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Characterisitcs chart of Tr1
0.7 mA
0.6 mA
0.5 mA
0.4 mA
100
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
0
0
2
4
6
8
10
12
Collector to emitter voltage VCE (V)
2
10
hFE  IC
320
IC / IB = 10
VCE = 10 V
280
Ta = 75°C
240
DC current gain hFE
Collector current IC (mA)
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
120
VCE(sat)  IC
Collector to emitter saturation voltage VCE(sat) (V)
IC  VCE
140
1
0.1
Ta = 75°C
25°C
200
160
−25°C
120
80
−25°C
40
25°C
0.01
0.1
1
10
Collector current IC (mA)
SJJ00236AED
100
0
0.1
1
10
100
Collector current IC (mA)
1 000
XP03390
Cob  VCB
IO  VIN
10
0
5
10
15
20
25
30
35
Collector to base voltage VCB
10
1
0.1
40
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Output current IO (mA)
Collector output capacitance Cob (pF)
f = 1 MHz
Ta = 25°C
1
VIN  IO
100
0
2
(V)
4
6
8
10
10
1
0.1
0.1
12
VO = 0.2 V
Ta = 25°C
Input voltage VIN (V)
1
10
100
Output current IO (mA)
Characterisitcs chart of Tr2
VCE(sat)  IC
IB = −1.0 mA
Collector current IC (mA)
−120
−100
− 0.5 mA
− 0.4 mA
−80
− 0.3 mA
−60
− 0.2 mA
−40
− 0.1 mA
−20
0
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
0
−2
−4
−6
−8
−10
−12
−1
IC / IB = 10
Ta = 75°C
− 0.1
25°C
−25˚C
− 0.01
−1
1
0
−5 −10 −15 −20 −25 −30 −35 −40
Collector to base voltage VCB (V)
25°C
200
−25°C
150
100
−10
−100
0
−1
−1 000
Collector current IC (mA)
Input voltage VIN (V)
VO = −5 V
Ta = 25°C
−1
0
− 0.5
−1
−1.5
−2
Input voltage VIN (V)
SJJ00236AED
−100
−1 000
VIN  IO
−100
−10
− 0.1
−10
Collector current IC (mA)
IO  VIN
−100
Output current IO (mA)
Collector output capacitance Cob (pF)
3
Ta = 75°C
50
Cob  VCB
f = 1 MHz
Ta = 25°C
VCE = −10 V
250
Collector to emitter voltage VCE (V)
10
hFE  IC
300
DC current gain hFE
Ta = 25°C
Collector to emitter saturation voltage VCE(sat) (V)
IC  VCE
−140
−2.5
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY