Transistors with built-in Resistor UNR31A0 Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.15 min. • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 5° ■ Features 1.20±0.05 0.80±0.05 3 Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −80 mA Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Symbol 0 to 0.01 Parameter 0.52±0.03 5° 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: CD Internal Connection R1 (47 kΩ) B C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.1 mA Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA 460 Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ 160 IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Min − 0.25 −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max Unit V V 47 80 − 0.2 V +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2003 SJH00053BED 1 UNR31A0 IC VCE VCE(sat) IC − 0.9 mA IB = −1.0 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA Ta = 25°C 100 Collector current IC (mA) Total power dissipation PT (mW) −80 80 60 40 − 0.4 mA −60 − 0.3 mA − 0.2 mA −40 − 0.1 mA −20 20 0 0 40 80 0 120 0 Ambient temperature Ta (°C) −2 Forward current transfer ratio hFE −25°C 200 100 −10 −100 10 1 0 −8 −16 −24 Input voltage VIN (V) VO = − 0.2 V Ta = 25°C −1 −1 −10 −100 Output current IO (mA) 2 SJH00053BED Ta = 85°C −25°C 25°C − 0.01 − 0.1 IC / IB = 10 −1 −10 −100 Collector current IC (mA) −10 f = 1 MHz Ta = 25°C VIN IO − 0.1 − 0.1 −12 − 0.1 IO VIN −32 Collector-base voltage VCB (V) Collector current IC (mA) −10 −10 Output current IO (mA) VCE = −10 V 25°C 0 −1 −8 −1 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 300 −6 −10 Collector-emitter voltage VCE (V) 400 Ta = 85°C −4 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 120 −40 VO = −5 V Ta = 25°C −1 − 0.1 0 − 0.8 Input voltage VIN (V) −1.6 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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