DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Built a Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 12.9 mΩ TYP. (VGS = 4.0 V, ID = 7 A) • Low Ciss: Ciss = 900 pF TYP. • Small and surface mount package (Power SOP8) 1.44 6.0 ±0.3 4 4.4 0.8 0.15 +0.10 –0.05 5.37 MAX. 0.05 MIN. 1.8 MAX. 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA2781GR Power SOP8 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) [MOSFET] ID(DC) ±13 A ID(pulse) ±52 A IF(AV) 2.5 A PT 2 W Drain Current (pulse) Note1 Average Forward Current Note2 [SCHOTTKY] Total Power Dissipation Note3 [MOSFET] Total Power Dissipation Note3 [SCHOTTKY] Channel & Junction Temperature Storage Temperature PT 1 W Tch, Tj 150 °C Tstg −55 to + 150 °C Drain Gate Gate Protection Diode Schottky Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16420EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 µ PA2781GR ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted. All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current SYMBOL Note IDSS Gate Leakage Current Drain to Source On-state Resistance MIN. TYP. MAX. UNIT VDS = 24 V, VGS = 0 V 50 µA VDS = 24 V, VGS = 0 V, TA = 125°C 10 mA ±10 µA 2.5 V IGSS VGS = ±20 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA RDS(on)1 VGS = 10 V, ID = 7 A 7.6 9.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 7 A 11.3 15.1 mΩ RDS(on)3 17.2 mΩ Gate Cut-off Voltage Note TEST CONDITIONS 1.0 VGS = 4.0 V, ID = 7 A 12.9 Input Capacitance Ciss VDS = 10 V 900 pF Output Capacitance Coss VGS = 0 V 450 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 7 A 9 ns tr VGS = 10 V 5 ns td(off) RG = 10 Ω 35 ns 8 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 9 nC Gate to Source Charge QGS VGS = 5 V 3 nC QGD ID = 13 A 4 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 1 A, VGS = 0 V 0.45 0.5 V IF = 1 A, VGS = 0 V, TA = 125°C 0.37 V Reverse Recovery Time trr IF = 7 A, VGS = 0 V 28 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 18 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. VDS 90% VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton IG = 2 mA RL 50 Ω VDD 90% td(off) tf toff Data Sheet G16420EJ1V0DS µ PA2781GR TYPICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 Mouted on ceramic substrate of 2 1200 mm x 2.2 mm 2.4 MOSFET 2 1.6 1.2 SCHOTTKY 0.8 0.4 0 0 20 40 60 80 100 120 140 160 0 TA - Ambient Temperature - °C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) 10 1 ms RDS(on) Limited (at VGS = 10 V) 1 10 ms Power Dissipation Limited 100 ms 0.1 DC Single pulse Mounted on ceramic substrate 2 of 1200 mm x 2.2 mm 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET) 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 100 µs ID(DC) Rth(ch-A) = 62.5°C/W 100 10 1 Single pulse 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm 0.1 1m 10 m 100 m 1 10 PW - Pulse Width - s Data Sheet G16420EJ1V0DS 100 1000 3 µ PA2781GR TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(j-A) = 125°C/W 100 10 1 Single pulse 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 80 VGS(off) - Gate Cut-off Voltage - V 3 60 50 4.5 V VGS = 10 V 40 4.0 V 30 20 10 RDS(on) - Drain to Source On-state Resistance - mΩ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 −50 −25 1 0 25 50 75 100 125 150 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15 VGS = 4.0 V 4.5 V 10 10 V 5 0 0.1 1 10 100 40 Pulsed 30 20 ID = 7 A 10 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 VDS = 10 V ID = 1 mA 2 Pulsed 0 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 70 Data Sheet G16420EJ1V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10000 Pulsed 20 VGS = 4.0 V 15 4.5 V 10 V 10 5 0 −50 −25 0 25 50 VGS = 0 V f = 1 MHz 1000 Ciss Coss 100 Crss 10 0.01 75 100 125 150 175 1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 VDS - Drain to Source Voltage - V td(off) tf 10 td(on) tr VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 8 35 7 VDD = 24 V 15 V 6V 30 25 6 VGS 4 15 3 10 2 5 10 100 1 VDS ID = 13 A 0 1 5 20 0 ID - Drain Current - A 2 4 6 8 0 10 12 14 16 18 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE SOURCE TO DRAIN DIODE REVERSE CURRENT 100 100000 VGS = 0 V Pulsed 10000 IR - Reverse Current - µA IF - Diode Forward Current - A 0.1 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 25 100 td(on), tr, td(off), tf - Switching Time - ns CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2781GR TA = 25°C 125°C 10 1 1000 30 V 100 VDS = 24 V 10 1 0.1 0.01 0.1 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 Tj - Junction Temperature - °C VF(S-D) - Source to Drain Voltage - V Data Sheet G16420EJ1V0DS 5 µ PA2781GR • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1