DIM600BSS17-E000 DIM600BSS17-E000 Single Switch IGBT Module Replaces November 2003, version PDS5681-1.0 FEATURES ■ Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5681-2.1 December 2003 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0V 600A 1200A APPLICATIONS ■ Motor Drives ■ Wind Turbines ■ UPS Systems 1(C) 2(E) 5(E1) 3(G1) 4(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS17-E000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM600BSS17-E000 Note: When ordering, please use the complete part number. Outline type code: B (See package details for further information) Fig. 2 Module Outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM600WBSS17-E000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1700 V ±20 V Continuous collector current Tcase = 75˚C 600 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 1200 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 3.8 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 33.75 kA2s Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4.0 kV IC I2t Visol 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS17-E000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Al2O3 Cu 20mm Thermal resistance - transistor (per arm) 425 Test Conditions Parameter Symbol Rth(j-c) Clearance: 11mm CTI (Critical Tracking Index): Continuous dissipation - Min. Typ. Max. Units - - 33 ˚C/kW - - 60 ˚C/kW - - 15 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C 3 - 5 Nm Electrical connections - M6 2.5 - 5 Nm Electrical connections - M4 1.1 - 2 Nm Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM600WBSS17-E000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 5 mA Gate leakage current VGE = ±20V, VCE = 0V - - 600 nA VGE(TH) Gate threshold voltage IC = 24mA, VGE = VCE 5.2 5.8 6.4 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 600A - 2.0 2.4 V VGE = 15V, IC = 600A, , Tcase = 125˚C - 2.3 3.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 600 A IFM Diode maximum forward current tp = 1ms - - 1200 A VF Diode forward voltage IF = 600A - 1.9 2.3 V IF = 600A, Tcase = 125˚C - 2.0 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 56 - nF Cies Input capacitance LM Module inductance - - 16 - nH Internal transistor resistance - per arm - - 0.6 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 2625 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 2250 - A IEC 60747-9 Note: L* is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS17-E000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 600A - 750 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 900V - 120 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.4Ω - 275 - ns L ~ 70nH - 100 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 195 - mJ Qg Gate charge - 4.5 - µC Qrr Diode reverse recovery charge IF = 600A, VR = 900V, - 150 - µC Irr Diode reverse current dIF/dt = 5200A/µs - 480 - A - 60 - mJ Min. Typ. Max. Units IC = 600A - 850 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 900V - 180 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.4Ω - 350 - ns L ~ 70nH - 100 - ns - 225 - mJ IF = 600A, VR = 900V, - 240 - µC dIF/dt = 5200A/µs - 495 - A - 105 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Note: Switching Characteristic measurements taken using standard driver circuit conditions. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM600WBSS17-E000 TYPICAL CHARACTERISTICS 1200 1200 Common emitter Tcase = 125˚C Common emitter Tcase = 25˚C 1000 Collector current, IC - (A) Collector current, IC - (A) 1000 800 600 400 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 200 800 600 400 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 200 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 0 4.0 Fig. 3 Typical output characteristics 5.0 Fig. 4 Typical output characteristics 300 Conditions: 280 Tcase = 125ºC Vcc = 900V 260 Rg(on) = 2.4 ohms R = 2.4 ohms 240 g(off) 480 220 360 Conditions: 440 Tcase = 125ºC IC = 600A V = 900V 400 cc Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 200 180 160 140 120 100 80 320 280 Eon Eoff Erec 240 200 160 120 60 80 40 Eon Eoff Erec 20 0 0 200 400 600 Collector current, IC - (A) 800 Fig. 5 Typical switching energy vs collector current 6/9 40 0 0 14 7 Gate resistance, Rg - (ohms) 21 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS17-E000 1200 2000 Tj = 25˚C Tj = 125˚C Tcase = 125˚C Vge = ±15V Rg(min) = 2.4 Ohms 1000 Collector current, IC - (A) Forward current, IF - (A) 1600 800 1200 600 400 Chip 800 Module 400 200 0 0 0 0 1.0 2.0 Forward voltage, VF - (V) 3.0 Fig. 7 Diode typical forward characteristics 400 600 800 1000 1200 1400 1600 1800 Collector-emitter voltage, Vce - (V) Fig. 8 IGBT reverse bias safe operating area 1.000 1000 Transient thermal impedance, Zth (j-c) - (°C/W ) Tj = 125˚C 800 Reverse recovery current, Irr - (A) 200 0.100 600 400 Diode Transistor 0.010 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 Reverse voltage, Vr - (V) Fig. 9 Diode reverse bias safe operating area 0.001 0.001 0.01 0.1 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1.0 Pulse width, tp - (s) 7/9 DIM600WBSS17-E000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(C) 2(E) 5(E1) 3(G1) 4(C1) Nominal weight: 475g Module outline type code: B Fig. 11 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com