ETC DIM200PHM33-F

DIM200PHM33-F000
DIM200PHM33-F000
Half Bridge IGBT Module
PDS5606-2.1 June 2003
FEATURES
■
Soft Punch Through Silicon
■
10µs Short Circuit Withstand
■
Isolated MMC Base with AlN Substrates
■
High Thermal Cycling Capability
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200PHM33-F000 is a half bridge 3300V soft punch
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
KEY PARAMETERS
VCES
VCE(sat) *
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.0V
200A
400A
* Measured at auxiliary terminals.
1(E1/C2)
2(C1)
3(E2)
5(E1)
7(E2)
4(G1)
6(G2)
8(C1)
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/9
DIM200PHM33-F000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V, Tj = –25˚C
-
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 90˚C
200
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
2.6
kW
Diode I2t value (Diode arm)
VR = 0, tp = 10ms, Tvj = 125˚C
20
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
QPD
Partial discharge - per module
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
10
pC
IC
I2t
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
AlN
AlSiC
33mm
20mm
175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per switch)
Test Conditions
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
48
˚C/kW
-
-
96
˚C/kW
-
-
16
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode (per switch)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M5
-
-
4
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/9
DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
15
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
400
-
nA
VGE(TH)
Gate threshold voltage
IC =20mA, VGE = VCE
4.2
5.1
6.0
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 200A
-
3.0
-
V
VGE = 15V, IC = 200A, , Tcase = 125˚C
-
3.6
-
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
200
-
A
IFM
Diode maximum forward current
tp = 1ms
-
400
-
A
VF†
Diode forward voltage
IF = 200A
-
2.45
-
V
IF = 200A, Tcase = 125˚C
-
2.35
-
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
25
-
nF
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
1.3
-
nF
LM
Module inductance - pins 2 & 3
-
-
40
-
nH
Internal transistor resistance - pins 2 & 3
-
-
0.5
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 2500V,
I1
-
950
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
875
-
A
IEC 60747-9
Note:
†
Measured at auxiliary terminals.
L* is the circuit inductance + LM
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 200A
-
2200
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
150
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) =16.5Ω
-
800
-
ns
Rise time
Cge = 56nF
-
100
-
ns
Qg
Gate charge
L ~ 100nH
-
5
-
µC
EON
Turn-on energy loss
IC = 200A, VGE = ±15V, VCE = 1800V,
RG = 7.5Ω, Cge = 55nF, L ~ 100nH
-
300
-
mJ
Qrr
Diode reverse recovery charge
-
90
-
µC
-
200
-
A
-
60
-
mJ
Min.
Typ.
Max.
Units
IC = 200A
-
2200
-
ns
Fall time
VGE = ±15V
-
250
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
240
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) =16.5Ω
-
700
-
ns
Rise time
Cge = 56nF, L ~ 100nH
-
100
-
ns
IC = 200A, VGE = ±15V, VCE = 1800V,
RG =7.5Ω, Cge = 55nF, L ~ 100nH
-
400
-
mJ
-
190
-
µC
-
230
-
A
-
140
-
mJ
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Test Conditions
IF = 200A, VR = 1800V,
Irr
Diode reverse current
dIF/dt = 900A/µs
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 200A, VR = 1800V,
Irr
Diode reverse current
dIF/dt = 900A/µs
EREC
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/9
DIM200PHM33-F000
TYPICAL CHARACTERISTICS
400
400
Common emitter
Tcase = 125˚C
350
350
300
300
Collector current, IC - (A)
Collector current, Ic - (A)
Common emitter
Tcase = 25˚C
250
200
150
100
250
200
150
100
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
50
0
0
6.0
Fig. 3 Typical output characteristics
4.0
6.0
8.0
Fig. 4 Typical output characteristics
1400
500
Conditions:
Tc = 125°C,
IC = 200A,
1200 Vcc = 1800V,
Cge = 56nF,
Vge = ±15V
Conditions:
Tc = 125°C,
Rg(on) = 7.5 Ohms,
Rg(off) = 16.5 Ohms
400 Cge = 56nF,
Vcc = 1800V,
Vge = ±15V
1000
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
2.0
Collector-emitter voltage, Vce - (V)
300
200
Eon (mJ)
Eoff (mJ)
Erec (mJ)
800
600
400
100
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
0
50
100
150
Collector current, IC - (A)
200
Fig. 5 Typical switching energy vs collector current
6/9
200
0
0
10
20
30
40
Gate resistance, Rg - (ohms)
50
60
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
500
400
Tj = 25˚C
Tj = 125˚C
350
400
Collector current, IC - (A)
Forward current, IF - (A)
300
250
200
150
100
Chip
300
Module
200
Conditions:
100 Tcase = 125˚C,
Vge = ±15V,
Rg(off) = 16.5 Ohms,
Cge = 56nF
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
4.0
500
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
500
1000
1500
2000
2500
3000
Fig. 8 Reverse bias safe operating area
100
Tj = 125˚C
Diode
Transistor
Transient thermal impedance, Zth (j-c) - (°C/kW )
450
400
Reverse recovery current, Irr - (A)
3500
Collector emitter voltage, Vce - (V)
350
300
250
200
150
100
10
1
IGBT
50
Diode
0
0
500
1000
1500
2000
2500
Reverse voltage, VR - (V)
3000
Fig. 9 Diode reverse bias safe operating area
3500
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
1.79
0.13
3.58
0.13
0.1
Pulse width, tp - (s)
3
15.77
48.03
31.53
48.03
1
4
19.11
248.53
38.23
248.53
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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2
11.26
5.80
22.52
5.80
7/9
DIM200PHM33-F000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 750g
Module outline type code: P
8/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
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