DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES ■ Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. PDS5606-3.1 April 2004 KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 200A 400A * Measured at auxiliary terminals. 1(E1/C2) 2(C1) 3(E2) 5(E1) 7(E2) 4(G1) 6(G2) 8(C1) Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200PHM33-F000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM200PHM33-F000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V, Tj = –25˚C - Max. Units 3300 V ±20 V Continuous collector current Tcase = 90˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 2.6 kW Diode I2t value (Diode arm) VR = 0, tp = 10ms, Tvj = 125˚C 20 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC IC I2t 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-F000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 33mm 20mm 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 48 ˚C/kW - - 96 ˚C/kW - - 16 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M5 - - 4 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM200PHM33-F000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 15 mA Gate leakage current VGE = ±20V, VCE = 0V - 400 - nA VGE(TH) Gate threshold voltage IC =20mA, VGE = VCE 5.5 6.5 7.0 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.8 - V VGE = 15V, IC = 200A, , Tcase = 125˚C - 3.6 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 200 - A IFM Diode maximum forward current tp = 1ms - 400 - A VF† Diode forward voltage IF = 200A - 2.9 - V IF = 200A, Tcase = 125˚C - 3.0 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 36 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 0.55 - nF LM Module inductance - pins 2 & 3 - - 40 - nH Internal transistor resistance - pins 2 & 3 - - 0.5 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 1000 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 930 - A IEC 60747-9 Note: † Measured at auxiliary terminals. L* is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-F000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 1950 - ns Fall time VGE = ±15V - 170 - ns EOFF Turn-off energy loss VCE = 1800V - 220 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =16.5Ω - 1180 - ns Rise time Cge = 56nF - 225 - ns Qg Gate charge L ~ 100nH - 5 - µC EON Turn-on energy loss IC = 200A, VGE = ±15V, VCE = 1800V, RG(ON) = 7.5Ω, Cge = 56nF, L ~ 100nH - 290 - mJ Qrr Diode reverse recovery charge - 80 - µC - 144 - A - 75 - mJ Min. Typ. Max. Units IC = 200A - 2200 - ns Fall time VGE = ±15V - 190 - ns EOFF Turn-off energy loss VCE = 1800V - 265 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =16.5Ω - 1150 - ns Rise time Cge = 56nF, L ~ 100nH - 280 - ns IC = 200A, VGE = ±15V, VCE = 1800V, RG(ON) =7.5Ω, Cge = 56nF, L ~ 100nH - 390 - mJ - 125 - µC - 155 - A - 130 - mJ Parameter Symbol td(off) tf tr Turn-off delay time Test Conditions IF = 200A, VR = 1800V, Irr Diode reverse current dIF/dt = 1600A/µs EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 200A, VR = 1800V, Irr Diode reverse current dIF/dt = 1600A/µs EREC Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM200PHM33-F000 TYPICAL CHARACTERISTICS 400 400 300 Collector current, Ic - (A) 300 Collector current, Ic - (A) Common emitter Tcase = 125˚C Vce is measured at power busbars and not the auxiliary terminals Common emitter Tcase = 25˚C Vce is measured at power busbars and not the auxiliary terminals 200 200 100 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 0 0.0 6.0 Fig. 3 Typical output characteristics 2.0 3.0 4.0 5.0 6.0 Collector-emitter voltage, Vce - (V) 7.0 8.0 Fig. 4 Typical output characteristics 1400 400 Conditions: Tc = 125˚C, Rg(on) = 7.5 Ohms, Rg(off) = 16.5 Ohms Cge = 56nF, Vcc = 1800V, 300 V = ±15V ge Conditions: Tc = 125˚C, IC = 200A, 1200 Vcc = 1800V, Cge = 56nF, Vge = ±15V 1000 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 1.0 200 Eon (mJ) Eoff (mJ) Erec (mJ) 800 600 400 100 Eon (mJ) Eoff (mJ) Erec (mJ) 0 0 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/9 200 0 0 8 16 24 32 40 Gate resistance, Rg - (ohms) 48 56 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-F000 500 450 Tj = 25˚C Tj = 125˚C 400 400 Collector current, IC - (A) Forward current, IF - (A) 350 300 250 200 150 Chip 300 Module 200 Conditions: 100 Tcase = 125˚C, Vge = ±15V, Rg(off) = 16.5 Ohms, Cge = 56nF 100 50 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward voltage, VF - (V) 4.5 0 0 5.0 500 1000 1500 2000 2500 3000 3500 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 350 100 Tj = 125˚C Diode Transistor Transient thermal impedance, Zth (j-c) - (°C/kW ) Reverse recovery current, Irr - (A) 300 250 200 150 100 50 10 1 IGBT Diode 0 0 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 1.79 0.13 3.58 0.13 0.1 Pulse width, tp - (s) 3 15.77 48.03 31.53 48.03 1 4 19.11 248.53 38.23 248.53 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 11.26 5.80 22.52 5.80 7/9 DIM200PHM33-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(E1/C2) 2(C1) 3(E2) 5(E1) 7(E2) 4(G1) 6(G2) 8(C1) Nominal weight: 750g Module outline type code: P Fig. 11 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com