GFU50N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 (IPAK) E D VDS 30V RDS(ON) 9mΩ ID 65A TM G 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89) S Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters and motor drives • Fast Switching for High Efficiency 0.245 (6.22) 0.235 (5.97) G G 0.094 (2.39) 0.087 (2.21) S Mechanical Data Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g 0.375 (9.53) 0.350 (8.89) 0.035 (0.89) 0.028 (0.71) 0.102 (2.59) 0.078 (1.98) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage A = 25°C unless otherwise noted) Limit Unit VDS 30 VGS ± 20 ID 65 IDM 150 PD 62.5 25.0 W TJ, Tstg –55 to 150 °C Junction-to-Case Thermal Resistance RθJC 2.0 °C/W Junction-to-Ambient Thermal Resistance RθJA 110 °C/W Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range V A Notes: (1) Maximum DC current limited by the package. Document Number 74575 17-Dec-01 www.vishay.com 1 GFU50N03 Vishay Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 — — V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 — 3.0 V IGSS VDS = 0V, VGS = ±20V — — ±100 nA IDSS VDS = 30V, VGS = 0V — — 1.0 µA ID(on) VDS ≥ 5V, VGS = 10V 50 — — A VGS = 10V, ID = 15A — 7.1 9 VGS = 4.5V, ID = 13A — 10 12 VDS = 15V, ID = 15A — 50 — VDS=15V, VGS=5V, ID=15A — 31 43 — 60 84 — 9 — — 8.5 — — 13 26 — 16 29 — 94 132 — 38 57 VGS = 0V — 3240 — Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg VDS = 15V, VGS = 10V ID = 15A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDD = 15V, RL = 15Ω tr Turn-Off Delay Time td(off) Fall Time ID ≅ 1A, VGEN = 10V RG = 6Ω tf nC ns Input Capacitance Ciss Output Capacitance Coss VDS = 15V — 625 — Crss f = 1.0MHZ — 285 — IS — — — 20 A VSD IS = 20A, VGS = 0V — 0.85 1.3 V Reverse Transfer Capacitance pF Source-Drain Diode Max Diode Forward Current (1) Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH www.vishay.com 2 Document Number 74575 17-Dec-01 GFU50N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10V 70 6.0V 4.5V 60 4.0V 80 VDS = 10V 70 5.0V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 80 3.5V 50 40 30 3.0V 20 10 60 50 TJ = 125°C 40 30 --55°C 20 25°C 10 VGS = 2.5V 0 0 0 1 2 3 4 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage Fig. 4 – On-Resistance vs. Drain Current 2 5 0.015 1.8 RDS(ON) -- On-Resistance (Ω) V(th) -- Gate-to-Source Threshold Voltage (V) ID = 250µA 1.6 1.4 1.2 1 0.8 0.6 --50 0.0125 VGS = 4.5V 0.01 0.0075 VGS = 10V 0.005 0.0025 0 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 ID -- Drain Current (A) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = 10V ID = 15A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Document Number 74575 17-Dec-01 www.vishay.com 3 GFU50N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.03 10 VDS = 15V ID = 15A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 15A 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 8 6 4 2 0 2 4 6 8 10 0 10 30 40 50 60 Fig. 9 – Source-Drain Diode Forward Voltage Fig. 8 – Capacitance 100 4000 3500 VGS = 0V f = 1MHZ VGS = 0V Ciss 3000 IS -- Source Current (A) C -- Capacitance (pF) 20 Qg -- Gate Charge (nC) VGS -- Gate-to-Source Voltage (V) 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss 500 0 Crss 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) www.vishay.com 4 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD -- Source-to-Drain Voltage (V) Document Number 74575 17-Dec-01 GFU50N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance ID = 250µA 42 RθJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) 43 41 40 39 38 37 36 --50 --25 0 25 50 75 100 125 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 2.0°C/W 4. TJ -- TA = PDM* RθJA(t) 150 Pulse Duration (sec.) TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 1000 1000 ID -- Drain Current (A) 800 600 400 0.001 0.01 0.1 1 10 0µ s 1m s 10 m 10 RDS(ON) Limit s DC VGS = 10V Single Pulse RθJC = 2.0°C/W TA = 25°C 200 0 0.0001 10 100 1 0.1 1 10 100 VDS -- Drain-Source Voltage (V) Document Number 74575 17-Dec-01 www.vishay.com 5