GF4953 Dual P-Channel Enhancement-Mode MOSFET VDS –30V RDS(ON) 53mΩ ID –4.9A H C N TRENFET GE TM D1 D2 D2 8 7 6 5 t c u rod P New SO-8 0.197 (5.00) 0.189 (4.80) 8 D1 Q1 Q2 1 2 3 4 5 S1 0.157 (3.99) 0.150 (3.81) G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. Mounting Pad Layout 0.050(1.27) 0.016 (0.41) 0 °– 8 ° 0.050 typ. (1.27) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD750,Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C) TA = 25°C TA = 70°C Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. A = 25°C unless otherwise noted) Limit Unit VDS –30 VGS ± 20 ID – 4.9 – 3.9 IDM – 30 PD 2.0 1.3 W TJ, Tstg –55 to 150 °C RθJA 62.5 °C/W V A 7/10/01 GF4953 Dual P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = –250µA –30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250µA –1.0 – –3.0 V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = –30V, VGS = 0V – – –1.0 µA VDS = –30V, VGS = 0V, TJ = 55°C – – –25 VDS ≥ –5V, VGS = –10V –20 – – VGS = –10V, ID = –4.9A – 43 53 VGS = –4.5V, ID = –3.6A – 65 95 VDS = –15V, ID = –4.9A – 10 – VDS= –15V, ID= –4.9A, VGS= –5V – 10 14 – 18 25 – 3.0 – – 4.0 – – 9.0 15 – 5.0 20 – 55 75 – 18 25 – 860 – – 180 – – 120 – Static On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VDS = –15V, VGS = –10V ID = –4.9A VDD = –15V, RL = 15Ω ID ≈ –1A, VGEN = –10V RG = 6Ω tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –15V, VGS = 0V f = 1.0MHZ nC ns pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% IS — – – –1.7 A VSD IS = –1.7A, VGS = 0V – 0.8 –1.2 V VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4953 Dual P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 -- 6.0V VGS = -- 10V VDS = -- 10V -- 5.0V 25 -- 7.0V 25 ID -- Drain Current (A) --ID -- Drain-to-Source Current (A) 30 -- 4.5V 20 -- 4.0V 15 -- 3.5V 10 -- 3.0V 5 25°C 20 --55°C TJ = 125°C 15 10 5 -- 2.5V 0 0 1 2 3 4 5 2 3 4 5 6 --VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 2.2 0.16 ID = --250µA 2 1.8 1.6 1.4 1.2 1 --50 0.12 0.1 VGS = --4.5V 0.08 0.06 --10V 0.04 0 --25 0 25 50 75 100 125 150 1.6 VGS = --10V ID = --4.9A 1.4 1.2 1 0.8 0.6 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 5 10 15 20 -- ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature --50 0.14 0.02 TJ -- Junction Temperature (°C) RDS(ON) -- On-Resistance (Normalized) 1 --VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) --VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 125 150 25 30 GF4953 Dual P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 --VGS -- Gate-to-Source Voltage (V) 0.2 RDS(ON) -- On-Resistance (Ω) ID = --4.9A 0.16 0.12 0.08 TJ = 125°C 0.04 25°C 0 8 6 4 2 0 2 4 6 8 10 0 4 8 12 16 20 --VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 1200 100 f = 1MHZ VGS = 0V 1000 VGS = 0V Ciss --IS -- Source Current (A) C -- Capacitance (pF) VDS = --15V ID = --4.9A 800 600 400 Coss 10 TJ = 125°C 1 25°C --55°C 0.1 200 Crss 0 0 5 10 15 20 25 --VDS -- Drain-to-Source Voltage (V) 30 0.01 0 0.2 0.4 0.6 0.8 1 1.2 --VSD -- Source-to-Drain Voltage (V) 1.4 1.6 GF4953 Dual P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Thermal Impedance 1 36 D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance --BVDSS -- Drain-to-Source Breakdown Voltage (V) ID = --250µA 35 34 33 32 --50 --25 0 25 50 75 100 125 0.2 0.1 0.1 PDM 0.05 0.02 t1 t2 0.01 0.01 Single Pulse 0.001 0.0001 0.001 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration 1 10 100 Fig. 13 – Maximum Safe Operating Area 100 10 Single Pulse RθJA = 82°C/W TA = 25°C 1m --ID -- Drain Current (A) 40 Power (W) 0.1 Pulse Duration (sec.) 50 30 20 10 0 0.01 0.01 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 82°C/W (on 1-in2 2 oz. Cu. FR-4) 4. TJ - TA = PDM * RθJA (t) 10 s s 10 10 0µ ms 0m 1s s 1 RDS(ON) Limit 10s 0.1 DC VGS = --10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 --VDS -- Drain-Source Voltage (V) 100