GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 11mΩ ID 60A H C N ct E ET u R d T ENF ro P New G ® TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D S 0.155 (3.93) 0.134 (3.40) D 0.603 (15.32) 0.573 (14.55) 0.360 (9.14) 0.330 (8.38) 0.635 (16.13) 0.580 (14.73) 1.148 (29.16) 1.118 (28.40) S 0.104 (2.64) 0.094 (2.39) 0.160 (4.06) 0.09 (2.28) G 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) * D 0.560 (14.22) 0.530 (13.46) Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 60 IDM 100 PD 62.5 25 W TJ, Tstg –55 to 150 °C TL 275 °C Junction-to-Case Thermal Resistance RθJC 2.0 °C/W Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Unit V A Notes: (1) Maximum DC current limited by the package 5/1/01 GFP60N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 IGSS VDS = 0V, VGS = ±20V ±100 nA IDSS VDS = 30V, VGS = 0V 1 µA ID(on) VDS ≥ 5V, VGS = 10V Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) V 3.0 60 A VGS = 10V, ID = 30A 9 11 VGS = 4.5V, ID = 25A 13 16 Forward Transconductance(1) gfs VDS = 10V, ID = 25A 40 Diode Forward Voltage VSD IS = 25A, VGS = 0V 0.9 1.3 VDS =15V, VGS =5V, ID =50A 16 22 35 60 mΩ S V (1) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 50A Turn-Off Delay Time ID ≈ 1A, VGEN = 10V td(off) Fall Time 6 VDD = 15V, RL = 15Ω tr RG = 6Ω tf 11 20 11 20 48 80 15 30 Input Capacitance Ciss VGS = 0V – 1850 – Output Capacitance Coss VDS = 15V – 315 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 145 – trr IF = 25A, di/dt = 100A/µs Source-Drain Reverse Recovery Time nC 8 ns pF 160 ns Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID -- Drain Current (A) ID -- Drain Source Current (A) 4.5V 6.0V 4.0V 40 3.5V 20 3.0V 40 30 TJ = 125°C 20 --55°C 25°C 10 2.5V 0 0 0 1 2 3 4 5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.03 1.4 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (Normalized) ID = 250µA 1.2 1 0.8 0.6 0.4 --50 0 25 50 75 100 125 150 VGS = 4.5V 5V 0.015 10V 0.01 0.005 1.6 VGS = 10V ID = 30A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 20 40 60 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) 0.02 0 --25 TJ -- Junction Temperature (°C) 0.6 --50 0.025 125 150 80 100 GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.04 ID = 30A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) 0.035 0.03 0.025 0.02 TJ = 125°C 0.015 0.01 25°C 0.005 VDS = 15V ID = 15A 8 6 4 2 0 0 2 4 6 8 10 0 30 VGS -- Gate-to-Source Voltage (V) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 35 100 VGS = 0V f = 1MHZ VGS = 0V IS -- Source Current (A) 2000 C -- Capacitance (pF) 20 Qg -- Charge (nC) 2500 Ciss 1500 1000 500 0 10 10 TJ = 125°C 1 25°C --55°C 0.1 Coss Crss 0 5 0.01 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) 1 1.2 GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance 1 1.15 RθJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (Normalized) ID = 250µA 1.1 1.05 1 0.95 0.9 --50 --25 0 25 50 75 100 125 0.1 1. Duty Cycle, D = t1/t2 2. RθJC(t) = RθJC(norm) *RθJC 3. RθJC = 2.0°C/W 4. TJ -- TC = PDM* RθJC(t) 0.01 0.0001 150 Fig. 12 – Power vs. Pulse Duration 0.1 1 10 Fig. 13 – Maximum Safe Operating Area Single Pulse RθJC = 2.0°C/W TC = 25°C ID -- Drain Current (A) 800 Power (W) 0.01 1000 1000 600 400 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 10 0µ s 100 1m s 10 m 10 1 0.1 s RDS(ON) Limit 100ms VGS = 10V Single Pulse RθJC = 2.0°C/W TC = 25°C 200 0 0.0001 0.001 Pulse Duration (sec.) TJ -- Junction Temperature (°C) DC 1 10 VDS -- Drain-Source Voltage (V) 100