GF2M303 Vishay Semiconductor New Product Dual P-Channel Logic Level Enhancement-Mode MOSFET VDS –20V RDS(ON) 0.135Ω ID –2.3A SOT-23-6L 0.122 (3.10) 0.114 (2.90) Pin Configuration (Top View) Top View N O I LL H I M ENC 0 0 2 LL TR LOGY CE CHNO ET TE GENF Mounting Pad Layout 6 5 4 1 2 3 G S G 0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50) ® 0.020 (0.50) 0.010 (0.25) 0.037 (0.95) 0.075 (1.90) Dimensions in inches and (millimeters) 0.028 (0.7) 0.039 (1.07) 0.004 (0.10) 0.0005 (0.013) 0.008 (0.20) 0.004 (0.10) 0.039 (1.00) 0.036 (0.90) 0.094 (2.4) 10° Typical 0.037 (0.95) Ref. 0.074 (1.9) Ref. Mechanical Data Features Case: SOT-23-6L package • Advanced trench process technology Terminals: Leads solderable per MIL-STD-750, Method 2026 • High density cell design for ultra low on-resistance Marking Code: M3 • Popular SOT-23-6L package with copper lead-frame for superior thermal and electrical capabilities • Compact and low profile • –1.8V rated Maximum Ratings and Thermal Characteristics (T A Parameter = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS ±8 ID – 2.3 – 1.8 IDM –8 PD 1.15 0.73 W TJ, Tstg –55 to 150 °C RθJA 110 °C/W Continuous Drain Current(2) TJ = 150°C TA = 25°C TA = 70°C (1) Pulsed Drain Current Maximum Power Dissipation(2) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range (2) Junction-to-Ambient Thermal Resistance Unit V A Note: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on a 1in2 2oz. Cu PCB (FR-4 material) Document Number 74517 5-Dec-01 www.vishay.com 1 GF2M303 Vishay Semiconductor Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit BVDSS VGS = 0V, ID = –250µA –20 – – V – –8.8 – mV/°C Static Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Reference to 25°C, ID= –1mA Breakdown Voltage Temp. Coefficient Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250µA –0.45 – – V Gate-Body Leakage IGSS VGS = ±8V, VDS = ± 0V – – ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) (1) Drain-Source On-State Resistance RDS(on) Forward Transconductance(1) gfs VDS = –16V, VGS = 0V – – –1 VDS = –16V, VGS =0V, TJ = 85°C – – –10 VDS ≥ –5V, VGS = –4.5V –5 – – VGS = –4.5V, ID = –2.3A – 109 135 VGS = –2.5V, ID = –2.0A – 146 180 VGS = –1.8V, ID = –1.7A – 205 250 VDS = –5V, ID = –2.3A – 5 – – 5.1 7.5 – 1.0 – – 1.2 – – 7 20 µA A mΩ S Dynamic Total Gate Charge(1) Qg Gate-Source Charge(1) Qgs (1) Gate-Drain Charge VDS = –10V, VGS = –4.5V ID = –2.3A Qgd (1) Turn-On Delay Time td(on) (1) Turn-OnRise Time tr Turn-Off Delay Time(1) VDD = –8V, RL = 8Ω nC – 45 60 – 162 200 – 116 160 – 343 – – 77 – – 58 – TA = 25°C – – –1.3 A ISM — – – –8 A VSD VGS = 0V, IS = –1.05A – –0.85 –1.1 V td(off) Turn-OffFall Time(1) tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss ID ≅ –1A, VGEN = –4.5V RG = 6Ω VDS = –10V, VGS = 0V f = 1.0MHZ ns pF Source-Drain Diode Maximum Diode Forward Current IS Maximum Pulsed Diode Forward Current (2) Diode Forward Voltage(1) Notes: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% (2) Pulse width limited by maximum junction temperature VDD Switching Test Circuit Switching Waveforms RD VIN ton td(on) tr td(off) tf 90 % 90% VOUT D Output, VOUT VGEN toff RG 10% 10% DUT 90% G 50% S Input, VIN 50% 10% INVERTED PULSE WIDTH www.vishay.com 2 Document Number 74517 5-Dec-01 GF2M303 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 8 VGS = -- 3.5V, -- 4.0V, -- 4.5V, -- 5.0V VDS = -- 10V --ID -- Drain Source Current (A) --ID -- Drain-to-Source Current (A) 8 -- 3.0V 6 -- 2.0V -- 2.5V 4 -- 1.5V 2 --55°C 25°C 6 TJ = 125°C 4 2 -- 1.0V 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 --VDS -- Drain-to-Source Voltage (V) --VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.4 3 0.8 RDS(ON) -- On-Resistance (Ω) ID = --250µA 1.2 1 0.8 0.6 0.4 0.6 --1.8V 0.4 --2.5V 0.2 VGS = --4.5V 0.2 --50 0 --25 0 25 50 75 100 125 0 150 2 3 4 5 6 7 -- ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 8 0.6 1.6 VGS = --4.5V ID = --2.3A ID = -- 2.3A 1.4 1.2 1 0.8 0.6 --50 1 TJ -- Junction Temperature (°C) RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) --VGS(th) -- Gate-to-Source Threshold Voltage (V) (Normalized) 0 0.5 0.4 0.3 0.2 TJ = 125°C 0.1 TJ = 25°C 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) Document Number 74517 5-Dec-01 125 150 1 2 3 4 5 -- VGS -- Gate-to-Source Voltage (V) www.vishay.com 3 GF2M303 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 – Gate Charge Fig. 8 – Capacitance 600 f = 1MHZ VGS = 0V VDS = --10A ID = --2.3A 500 6 C -- Capacitance (pF) --VGS -- Gate-to-Source Voltage (V) 8 4 2 CISS 400 300 200 COSS 100 CRSS 0 0 2 4 6 8 0 10 0 4 QG -- Gate Charge (nC) 8 12 16 20 -- VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Thermal Impedance 1 10 D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance --IS -- Source Current (A) VGS = 0V TJ = 125°C 1 25°C —55°C 0.1 0.01 0.2 0.6 1 1.4 1.8 0.2 0.1 0.1 PDM 0.05 0.02 t1 0.01 -- VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration 1 10 100 Fig. 12 – Maximum Safe Operating Area Single Pulse RθJA = 110°C/W TA = 25°C --ID -- Drain Current (A) RDS(ON) Limit 80 Power (W) 0.1 100 100 60 40 0.001 0.01 0.1 1 Pulse Duration (sec.) 10 100 10 0µ s 10 10 1 0m 1ms s 10ms 1s 0.1 20 www.vishay.com 4 0.01 Pulse Duration (sec.) 120 0 0.0001 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 110°C/W 4. TJ - TA = PDM * RθJA (t) Single Pulse 0.001 0.0001 0.001 2.2 t2 0.01 0.01 0.1 VGS = --10V Single Pulse RθJA = 110°C/W TA = 25°C DC 10s 1 10 100 --VDS -- Drain-Source Voltage (V) Document Number 74517 5-Dec-01