GFP70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8mΩ ID 70A H C N E ET R T ENF G D ® TO-220AB 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) * 0.410 (10.41) 0.350 (8.89) G PIN D 0.603 (15.32) 0.573 (14.55) 0.360 (9.14) 0.330 (8.38) 0.635 (16.13) 0.580 (14.73) 1.148 (29.16) 1.118 (28.40) S 0.104 (2.64) 0.094 (2.39) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) S Features 0.155 (3.93) 0.134 (3.40) D G 0.185 (4.70) 0.170 (4.31) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 70 IDM 200 PD 62.5 25 W TJ, Tstg –55 to 150 °C TL 275 °C Junction-to-Case Thermal Resistance RθJC 2.0 °C/W Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Unit V A Notes: (1) Maximum DC current limited by the package 5/16/01 GFP70N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 — — V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 — 3.0 V IGSS VDS = 0V, VGS = ±20V — — ±100 nA IDSS VDS = 30V, VGS = 0V — — 1 µA ID(on) VDS ≥ 5V, VGS = 10V 70 — — A VGS = 10V, ID = 35A — 6 8 VGS = 4.5V, ID = 30A — 9 11 VDS = 15V, ID = 35A — 61 — VDS =15V, VGS=5V, ID=35A — 34 48 — 63 95 — 11 — — 11 — — 9 14 — 9 14 — 100 167 — 31 62 — 3400 — Static Gate-Body Leakage Zero Gate Voltage Drain Current (2) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 35A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≅ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance nC ns — 618 — Crss VGS = 0V VDS = 15V f = 1.0MHZ — 300 — IS — — — 35 A VSD IS = 35A, VGS = 0V — 0.9 1.3 V pF Source-Drain Diode Max Diode Forward Current (2) Diode Forward Voltage Notes: (1) Maximum DC current limited by the package (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics Fig. 2 – Transfer Characteristics 70 4.5V 10V 6.0V 60 VDS = 10V 60 4.0V ID -- Drain Current (A) ID -- Drain Source Current (A) 70 3.5V 50 40 30 3.0V 20 50 40 TJ = 125°C 30 --55°C 20 25°C 10 10 VGS = 2.5V 0 0 0 0.5 1 1.5 2 2.5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.014 1.8 0.012 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0.6 --50 0.006 VGS = 10V 0.004 0 --25 0 25 50 75 100 125 150 1.6 VGS = 10V ID = 35A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 20 40 60 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) VGS = 4.5V 0.008 0.002 TJ -- Junction Temperature (°C) 0.6 --50 0.01 125 150 80 100 GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.03 10 VDS = 15V ID = 35A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 35A 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 4 6 8 4 2 10 0 10 20 30 40 50 60 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 4500 70 100 Ciss IS -- Source Current (A) 3500 VGS = 0V f = 1MHZ VGS = 0V 4000 C -- Capacitance (pF) 6 0 2 3000 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss Crss 500 0 8 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature RΘJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) D = 0.5 ID = 250µA 39 38 37 36 35 --50 Fig. 11 – Thermal Impedance 1 40 0.2 PDM 0.1 0.1 0.05 t1 1. Duty Cycle, D = t1/t2 2. RθJC (t) = RθJC(norm) *RθJC 3. RθJC = 2.0°C/W 4. TJ - TC = PDM * RθJC (t) 0.01 --25 0 25 50 75 100 125 0.0001 150 0.001 0.01 0.1 1 10 Pulse Duration (sec.) TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 1000 1000 Single Pulse RθJC = 2.0°C/W TC = 25°C ID -- Drain Current (A) 800 Power (W) t2 Single Pulse 600 400 10 S RD 1 0.0001 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 (O N) Lim 1m s 10 m 10 200 0 0µ s it 100 s 100ms VGS = 10V Single Pulse RΘJC = 2.0 °C/W TC = 25°C 0.1 DC 1 10 VDS -- Drain-Source Voltage (V) 100