GFD55N03 Vishay Semiconductors New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T ENF G TO-252 (DPAK) D VDS 30V RDS(ON) 7mΩ ID 75A ® 0.265 (6.73) 0.255 (6.48) G 0.094 (2.39) 0.087 (2.21) S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190 (4.826) D 0.050 (1.27) 0.035 (0.89) 0.165 (4.191) 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) G 0.410 (10.41) 0.380 (9.65) 0.060 (1.52) 0.045 (1.14) S 0.100 (2.54) 0.197 (5.00) 0.177 (4.49) 0.118 (3.0) 0.035 (0.89) 0.028 (0.71) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.204 (5.18) 0.156 (3.96) 0.020 (0.51) min. 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.243 (6.172) Dimensions in inches and (millimeters) 0.063 (1.6) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters and motor drives • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T C Parameter = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 75 47 IDM 180 PD 62.5 25.0 2.5 W TJ, Tstg –55 to 150 °C RθJC 2.0 °C/W RθJA 50 °C/W Continuous Drain Current(3) TJ = 150°C Pulsed Drain Current TC = 25°C TC = 100°C (1) Power Dissipation TJ = 150°C TC = 25°C TC = 100°C TA = 25°C (2) Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance (2) Junction-to-Ambient Thermal Resistance Unit V A Notes: (1) Pulse width limited by maximum junction temperature (2) Surface mounted on a 1-in2 2oz. Cu PCB (FR-4 material) (3) Maximum DC current limited by the package Document Number 74591 8-Jan-02 www.vishay.com 1 GFD55N03 Vishay Semiconductors Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit BVDSS VGS = 0V, ID = 250µA 30 – – V – 17 – mV/ °C 1.0 – 3.0 V J Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Ref. to 25°C, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA ∆VGS(th)/∆TJ Ref. to 25°C, ID = 250µA Gate Threshold VoltageTemp. Coefficient Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs – –5 – mV/ °C VDS = 0V, VGS = ±20V – – ±100 nA VDS = 24V, VGS = 0V – – 1.0 VDS = 24V, VGS = 0V, TJ = 125°C – – 10 VDS ≥ 5V, VGS = 10V 50 – – VGS = 10V, ID = 25A – 5.0 7 VGS = 4.5V, ID = 20A – 7.5 10 VDS = 10V, ID = 25A – 60 – VDS=15V, VGS=5V, ID=25A – 31 45 – 58 80 – 9.4 – µA A mΩ S Dynamic Total Gate Charge (1) Gate-Source Charge Qg (1) Qgs VDS = 15V, VGS = 10V ID = 25A Gate-Drain Charge (1) Qgd – 10.5 – Turn-On Delay Time (1) td(on) – 10 20 tr VDD = 15V, ID = 1A – 13 25 td(off) VGEN = 10V, RG = 6Ω – 82 120 Rise Time (1) Turn-Off Delay Time (1) Fall Time (1) nC ns tf – 30 50 Input Capacitance Ciss 3100 – Output Capacitance Coss – 670 – Reverse Transfer Capacitance Crss VGS = 0V VDS = 15V f = 1.0MHZ – – 410 – IS – – – 75 A ISM – – – 180 A VSD IS = 25A, VGS = 0V – 0.9 1.3 V – 220 – ns IF = 15A, di/dt = 100A/µs – 3.3 – A – 400 – nC pF Source-Drain Diode Maximum Diode Forward Current (3) Max. Pulsed Diode Forward Current (2) (1) Diode Forward Voltage (1) Reverse Recovery Time trr Diode Forward Voltage(1) VSD (1) Reverse Recovery Charge Qrr Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% (2) Pulse width limited by max. junction temp. (3) Max. DC current limited by the package RD VIN Switching Test Circuit ton VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH www.vishay.com 2 Document Number 74591 8-Jan-02 GFD55N03 Vishay Semiconductors Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 70 80 VDS = 10V ID -- Drain Source Current (A) ID -- Drain-to-Source Current (A) VGS = 4.0V, 4.5V, 5.0V, 6.0V, 10.0V 3.5V 60 40 3.0V 20 VGS = 2.5V 0 60 50 40 30 TJ = 125°C 20 25°C --55°C 10 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage Fig. 4 – On-Resistance vs. Drain Current 1.4 4.5 0.015 RDS(ON) -- On-Resistance (Ω) V(th) -- Gate-to-Source Threshold Voltage (Normalized) ID = 250µA 1.2 1 0.8 0.6 0.4 --50 0.01 VGS = 4.5V 0.005 VGS = 10V 0 --25 0 25 50 75 100 125 0 150 10 20 Fig. 5 – On-Resistance vs. Junction Temperature 50 70 60 80 0.03 VGS = 10V ID = 25A ID = 25A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 40 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 1.4 1.2 1 0.8 0.6 --50 30 ID -- Drain Current (A) TJ -- Junction Temperature (°C) --25 0 25 50 75 100 TJ -- Junction Temperature (°C) Document Number 74591 8-Jan-02 125 150 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 0 2.0 25°C 4.0 6.0 8.0 10.0 VGS -- Gate-to-Source Voltage (V) www.vishay.com 3 GFD55N03 Vishay Semiconductors Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 – Gate Charge Fig. 8 – Capacitance 4000 VDS = 15V ID = 25A f = 1MHZ VGS = 0V 3500 Ciss 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 3000 2500 2000 1500 1000 Coss 2 500 0 0 0 10 20 30 40 50 60 70 Crss 0 5 10 15 20 25 Qg -- Gate Charge (nC) VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Transient Thermal Impedance 30 100 D = 0.5 RθJA (norm) -- Normalized Thermal Impedance IS -- Source Current (A) VGS = 0V TJ = 125°C 10 25°C 0.2 0.1 0.05 Single Pulse, 0.02 1. Duty Cycle, D = t1/t2 2. RθJC(t) = RθJC(norm) *RθJC 3. RθJC = 2.0°C/W 4. TJ -- TC = PDM* RθJC(t) --55°C 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Pulse Duration (sec.) VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration Fig. 12 – Maximum Safe Operating Area 1000 1000 Single Pulse RθJC = 2.0°C/W TC = 25°C ID -- Drain Current (A) 800 600 400 10 1m 0.001 0.01 0.1 1 10 m 0m RDS(ON) Limit DC 10 s 10 10 s s VGS = 10V Single Pulse RθJC = 2.0°C/W TC = 25°C 200 0 0.0001 0µ s 100 1 0.1 1 10 100 VDS -- Drain-Source Voltage (V) www.vishay.com 4 Document Number 74591 8-Jan-02