GF4425 P-Channel Enhancement-Mode MOSFET H C N t c E ET u R T ENF rod P G SO-8 New VDS –30V RDS(ON) 14mΩ ID -11A ® 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) 0.244 (6.20) 0.228 (5.79) 1 0.019 (0.48) x 45 ° 0.010 (0.25) 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.035 (0.889) 0.025 (0.635) 0.009 (0.23) 0.007 (0.18) 0.050 typ. (1.27) Mounting Pad Layout 0.069 (1.75) 0.053 (1.35) 0.050(1.27) 0.016 (0.41) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. Dimensions in inches and (millimeters) 4 Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS ±20 ID – 11 – 8.7 IDM – 50 PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W Continuous Drain Current (TJ = 150°C)(1) TA = 25°C TA = 70°C Pulsed Drain Current TA = 25°C TA = 70°C Maximum Power Dissipation Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Unit V A Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. 6/15/01 GF4425 P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = –250µA –1.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V — — V — — ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = –30V, VGS = 0V — — –1.0 VDS=–15V, VGS=0, TJ=70°C — — –5.0 On-State Drain Current(1) ID(on) VDS ≥ –5V, VGS = –10V –30 — — VGS = –10V, ID = –11A — 11.5 14 VGS = –4.5V, ID = –8.5A — 15.5 23 VDS = –15V, ID = –11A — 37 — — 73 120 — 12 — — 11 — — 7 25 — 11 25 — 210 250 — 76 100 — 3500 — — 700 — — 370 — — — –2.1 A Static Gate Threshold Voltage Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss VDS = –15V, VGS = –10V ID = –11A VDD = –15V, RL = 15Ω ID ≈ –1A, VGEN = –10V RG = 6Ω VDS = –15V, VGS = 0V f = 1.0 MHZ nC ns pF Source-Drain Diode Maximum Diode Forward Current IS Diode Forward Voltage Source-Drain Reverse Recovery Time VSD IS = –2.1A, VGS = 0V — — –1.2 V trr IF = -2.1A, di/dt = 100A/µs — 49 90 ns Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton td(on) RD VIN td(off) tf 90 % VOUT Output, VOUT RG tr 90% D VGEN toff 10% 10% DUT 90% G 50% Input, VIN 50% 10% S Switching Test Circuit INVERTED Switching Waveforms PULSE WIDTH GF4425 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 50 40 30 20 --3.0V 30 20 10 10 25°C --2.5V 0 1 2 0 3 4 5 1 2 3 4 5 --VDS -- Drain-to-Source Voltage (V) -- VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.03 1.4 ID = --250µA RDS(ON) -- On-Resistance (Ω) --V(th) -- Gate-to-Source Threshold Voltage (V) (Normalized) TJ = 125°C 40 --3.5V 0 1.2 1 0.8 0.6 --50 0.02 VGS = - 4.5V 0.01 -10V 0 0.4 --25 0 25 50 75 100 125 0 150 10 20 30 40 TJ -- Junction Temperature (°C) -- ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 50 0.1 1.6 ID = --11A RDS(ON) -- On-Resistance (Ω) VGS = --10V ID = --11A RDS(ON) -- On-Resistance (Normalized) --55°C VDS = --10V -- ID -- Drain Current (A) --ID -- Drain-to-Source Current (A) VGS = -- 4.5V, -5.0V, -6.0V, -7.0V, -8.0V, -10.0V --4.0V 1.4 1.2 1 0.8 0.08 0.06 0.04 125°C 0.02 TJ = 25°C 0 0.6 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 1 2 3 4 5 6 7 8 -- VGS -- Gate-to-Source Voltage (V) 9 10 GF4425 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 4800 VDS = --15V ID = --11A f = 1MHz VGS = 0V 8 Ciss C -- Capacitance (pF) -- VGS -- Gate-to-Source Voltage (V) 10 6 4 3600 2400 1200 Coss 2 Crss 0 0 0 10 20 30 40 50 60 70 0 80 5 10 15 20 25 Qg -- Gate Charge (nC) --VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Transient Thermal Impedance 30 100 D= 0.5 0.2 10 0.1 TJ = 125°C 0.05 1 0.02 25°C Single Pulse 0.1 --55°C 60 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 --VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration Fig. 12 – Maximum Safe Operating Area 70 100 Single Pulse RθJA = 60°C/W TA = 25°C 60 50 40 30 20 0 0.1 1 10 0µ 10 100 ms 0m 1s RDS(ON) Limit s s 10 10 s 1 10s 0.1 10 0.01 10 1m --ID -- Drain Current (A) --IS -- Source Current (A) VGS = 0V DC VGS = -10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.1 1 10 --VDS -- Drain-Source Voltage (V) 100