GF4435 P-Channel Enhancement-Mode MOSFET VDS –30V RDS(ON) 20mΩ ID –8.0A H C N TREENFET G ® SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. Mounting Pad Layout 0.050(1.27) 0.016 (0.41) 0 °– 8 ° 0.050 typ. (1.27) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance A = 25°C unless otherwise noted) Limit Unit VDS –30 VGS ± 20 ID – 8.0 IDM – 50 PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W V A Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. 7/10/01 GF4435 P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = –250µA –1.0 IGSS VDS = 0V, VGS = ± 20V – – 3.0 V – – ± 100 nA IDSS VDS = –30V, VGS = 0V – – –1.0 µA ID(on) VDS ≥ –5V, VGS = –10V –40 – – A Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = –250µA –30 – – V Drain-Source On-State Resistance(1) RDS(on) VGS = –10V, ID = –8.0A – 15.3 20 VGS = –4.5V, ID = –5.0A – 25.3 35 VDS = –15V, ID = –8.0A – 22 – – 54 60 – 8.5 – – 10.3 – – 24 30 – 12 30 – 78 120 – 37 80 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = –15V, VGS = –10V ID = –4.6A VDD = –15V, RL = 15Ω tr Turn-Off Delay Time ID ≈ –1A, VGEN = –10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 2520 – Output Capacitance Coss VDS = –15V – 490 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 335 – – – –2.1 A – –0.75 –1.2 V pF Source-Drain Diode Maximum Diode Forward Current IS Diode Forward Voltage VSD IS = –2.1A, VGS = 0V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 VGS = --10V --6.0V --5.0V VDS = --10V 40 40 -- ID -- Drain Current (A) --ID -- Drain-to-Source Current (A) 50 --4.5V 30 --4.0V 20 --3.5V 30 20 TJ = 125°C 10 10 --55°C 25°C --3V 0 0 0 1 2 3 4 5 1 2 3 4 5 --VDS -- Drain-to-Source Voltage (V) -- VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 6 0.06 2.4 0.055 RDS(ON) -- On-Resistance (Ω) --VGS(th) -- Gate-to-Source Threshold Voltage (V) 2.2 ID = --250µA 2 1.8 1.6 1.4 0.05 0.045 0.04 VGS = --4.5V 0.035 0.03 0.025 0.02 VGS = --10V 0.015 0.01 1.2 --50 --25 0 25 50 75 100 125 150 Fig. 5 – On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = --10V ID = --8.0A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 -- ID -- Drain Current (A) TJ -- Junction Temperature (°C) 125 150 40 50 GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.08 VDS = --15V ID = --4.6A -- VGS -- Gate-to-Source Voltage (V) ID = -- 8.0A RDS(ON) -- On-Resistance (Ω) 0.07 0.06 0.05 0.04 0.03 TJ = 125°C 0.02 TJ = 25°C 0.01 0 6 4 2 0 2 4 6 8 10 0 10 20 30 40 50 -- VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 60 100 3500 VGS = 0V f = 1MHz VGS = 0V 3000 Ciss --IS -- Source Current (A) C -- Capacitance (pF) 8 2500 2000 1500 1000 Coss 10 TJ = 125°C 1 25°C 0.1 --55°C 500 Crss 0 0.01 0 5 10 15 20 25 --VDS -- Drain-to-Source Voltage (V) 30 0 0.2 0.4 0.6 0.8 1.0 --VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 10 – Breakdown Voltage vs. Junction Temperature 35 34 33 32 31 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 100 70 10 0µ s 1m 60 ID -- Drain Current (A) -- BVDSS -- Drain-to-Source Breakdown Voltage (V) ID = --250 A 50 40 30 20 10 10 10 ms 0m 1s RDS(ON) Limit s 1 10s 0.1 10 0 s DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100