NL7SZ18 1−of−2 Non−Inverting Demultiplexer with 3−State Deselected Output The NL7SZ18 is a high−performance 1−to−2 Demultiplexer operating from a 1.65 V to 5.5 V supply. When the select pin [S] is enabled [high or low], the data in the address pin [A] is routed to one of the output pins [Y0 or Y1], maintaining a high−impedance on the deselected output pin (See Truth Table). This device has been optimized for on−board buffering applications and offers mixed (1.65 V, 2.3 V, 3.0 V and 5.5 V) voltage capability by providing over voltage tolerance (OVT*) circuitry on I/O pins. Features • • • • MARKING DIAGRAM 6 6 1 AAAd SOT−363/SC70−6/SC−88 DF SUFFIX CASE 419B • High−Speed Propagation Delay • http://onsemi.com tPD 2.5 nS (Typ), Load 50 pF @ 5.0 V Power Down Impedance Outputs in High−Z Output Drive Capability 32 mA @ 5.0 V Broad VCC Operating Range 1.65 V to 5.5 V Surface Mount Technology SC−70, 6−Lead Packaging OVT* on Inputs / Outputs 1 AAA = Device Marking d = Date Code S 1 6 Y0 GND 2 5 VCC A 3 4 Y1 Typical Applications • • • • Cell Phones PDAs Digital Cameras Video Cameras (TOP VIEW) PIN/FUNCTION TABLE Important Information • ESD Protection: MM >200 V, HBM >2000 V • Latch−Up Max Rating: 300 mA • Pin to Pin Compatible with NC7SZ18 Pin Function A Data Input S Demultiplexer Select *Over Voltage Tolerance (OVT) enables input and output pins to function outside (higher) of their operating voltages, with no damage to the devices or to signal integrity. Y0 Output 1 Y1 Output 2 TRUTH TABLE Input Output S A Y0 Y1 L L H H L H L H L H Z Z Z Z L H ORDERING INFORMATION Device NL7SZ18DFT2 Package Shipping† SC70−6 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 1 1 Publication Order Number: NL7SZ18/D NL7SZ18 MAXIMUM RATINGS Symbol Rating Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VOUT IIK DC Input Diode Current @ V1 −0.5 V −50 mA IOK DC Output Diode Current @ V1 −0.5 V −50 mA IOUT DC Output Sink Current 50 mA ICC DC Supply Current per Supply Pin 100 mA IGND DC Ground Current per Ground Pin 100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C JA Thermal Resistance (Note 1) 250 °C/W PD Power Dissipation in Still Air at 85°C 180 mW Level 1 − UL 94 V−0 @ 0125 in − > 2000 > 200 n/a V MSL Moisture Sensitivity FR Flammability Rating Oxygen Index: 28 to 34 ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) VESD Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Rating Value Unit VCC DC Supply Voltage 1.65 to 5.5 V VCC DC Supply Voltage, Data Retention 1.5 to 5.5 V VIN Input Voltage 0 to 5.5 V Output Voltage 0 to 5.5 V −40 to 85 °C 0 to 20 0 to 20 0 to 10 0 to 5 nS/V 350 °C/W VOUT TA Operating Temperature tr, tf Input Rise and Fall Times JA Thermal Resistance VCC @ 1.8 0.15 V VCC @ 2.5 0.2 V VCC @ 3.3 0.3 V VCC @ 5.0 0.5 V http://onsemi.com 2 NL7SZ18 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition Min 0.75 VCC 0.70 VCC VIH High−Level Input Voltage 1.65−1.95 2.3−5.5 VIL Low−Level Output Voltage 1.65−1.95 2.3−5.5 VOH High−Level Output Voltage VIN = VIH Typ TA = −40C to 85C Max Min Max 0.75 VCC 0.70 VCC 0.25 VCC 0.30 VCC Unit V 0.25 VCC 0.30 VCC V IOH = −100 a 1.65 2.3 3.0 4.5 1.55 2.20 2.90 4.40 1.65 2.30 3.00 4.50 1.55 2.20 2.90 4.40 IOH = −4.0 mA IOH = −8.0 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 2.3 3.0 3.0 4.5 1.29 1.90 2.40 2.30 3.80 1.52 2.15 2.80 2.68 4.20 1.29 1.90 2.40 2.30 3.80 IOL = 100 a 1.65 2.3 3.0 4.5 0.0 0.0 0.0 0.0 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 IOL = 4.0 mA IOL = 8.0 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 2.3 3.0 3.0 4.5 0.08 0.10 0.15 0.22 0.22 0.24 0.30 0.40 0.55 0.55 0.24 0.30 0.40 0.55 0.55 V 0.0 to 5.5 0.1 1.0 A 1.65 to 5.5 0.5 5.0 A 0.0 1.0 10 A 1.8 to 5.5 1.0 10 A VOL Low−Level Output Voltage IIN Input Leakage Current VIN = 5.5 V, GND IOZ Output High−Z Current VIN = VIH or VIL 0 Vout 5.5 V IOFF Power−Off Leakage Current VIN or VCC = 5.5 V ICC Quiescent Supply Current VIN = 5.5 V, GND VIN = VIL TA = 25C VCC (V) http://onsemi.com 3 V NL7SZ18 AC ELECTRICAL CHARACTERISTICS TA = −40C to 85C TA = 25C Symbol tPLH tPHL Parameter o aga o Delay e ay Propagation A to t Y0 or Y1 tPZL tPZH Output Enable Time tPLZ tPHZ CIN COUT Input Capacitance Output Capacitance CPD Power Dissipation Capacitance Condition VCC Min Typ Max Min Max Unit Figure CL = 15 pF RD = 1.0 M S = OPEN 1.8 0.15 2.5 0.2 3.3 0.3 5.0 0.5 2.0 1.0 0.8 0.5 6.3 3.6 2.7 2.0 10.1 5.7 4.0 3.1 2.0 1.0 0.8 0.5 10.5 6.0 4.3 3.3 nS Figures 1&3 CL = 50 pF RD = 500 S = OPEN 3.3 0.3 5.0 0.5 1.2 0.8 3.4 2.5 4.9 3.9 1.2 0.8 5.4 4.2 nS Figures 1&3 CL = 50 pF RD, RU = 500 S = GND for tPZH S = VIN for tPZL VI = 2 x VCC 1.8 0.15 2.5 0.2 3.3 0.3 5.0 0.5 3.0 1.8 1.2 0.8 6.9 4.2 3.2 2.5 12 6.8 5.0 4.0 3.0 1.8 1.2 0.8 12.5 7.3 5.5 4.3 nS Figures 1&3 CL = 50 pF RD, RD = 500 S = GND for tPHZ S = VIN for tPLZ VI = 2 x VCC 1.8 0.15 2.5 0.2 3.3 0.3 5.0 0.5 2.5 1.5 0.8 0.3 6.0 4.0 2.9 1.8 10 6.8 4.9 3.5 2.5 1.5 0.8 0.3 10.5 7.1 5.3 3.7 nS Figures 1&3 OPEN 3.3 2.5 4.0 pF 3.3 5.0 16 19.5 pF Note 5 Figure 2 5. CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (I CCD) at no output loading and operating at 50% duty cycle (see Figure 2). CPD is related to ICCD dynamic operating current by the expression: ICCD = (CPD) (VCC) (fIN) + (ICCDstatic). VI OPEN GND VCC A RU OUTPUT A S A INPUT CL OUTPUT RD Figure 1. AC Test Circuit Figure 2. ICCD Test Circuit CL Includes Load and Stray Capacitance Input PRR = 1.0 MHz; tW = 500 nS Input = AC Waveform; tr = tf = 1.8 nS PRR = 10 MHz; Duty Cycle = 50% S Input = GND or x http://onsemi.com 4 NL7SZ18 tr = 3 nS tf = 3 nS 90% 50% A Input VCC 90% 50% 10% 10% tPLH GND tPHL VOH 50% 50% Output VOL IR = tF = 3 nS 90% S Input 50% 50% 10% 10% tPZL Output VCC 90% GND tPLZ 50% VOL + 0.3 V VOL tPHZ tPZH VOH VOH − 0.3 V Output 50% Figure 3. AC Waveforms http://onsemi.com 5 NL7SZ18 PACKAGE DIMENSIONS SOT−363/SC70−6/SC−88 DF SUFFIX 6−LEAD PACKAGE CASE 419B−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 DIM A B C D G H J K N S 4 −B− S 1 2 3 D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 M N J C H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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