CY7C138 CY7C1394K x 8/9 Dual-Port Static RAM with Sem, Int, Busy CY7C138 CY7C139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells that allow simultaneous reads of the same memory location • 4K x 8 organization (CY7C138) • 4K x 9 organization (CY7C139) • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns • Low operating power: ICC = 160 mA (max.) • Fully asynchronous operation • Automatic power-down • TTL compatible • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device • On-chip arbitration logic • Semaphores included to permit software handshaking between ports • INT flag for port-to-port communication • Available in 68-pin PLCC • Pb-Free packages available Functional Description are included on the CY7C138/9 to handle situations when multiple processors access the same piece of data. Two ports are provided permitting independent, asynchronous access for reads and writes to any location in memory. The CY7C138/9 can be utilized as a standalone 8/9-bit dual-port static RAM or multiple devices can be combined in order to function as a 16/18-bit or wider master/slave dual-port static RAM. An M/S pin is provided for implementing 16/18-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory. Each port has independent control pins: chip enable (CE), read or write enable (R/W), and output enable (OE). Two flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently being accessed by the other port. The interrupt flag (INT) permits communication between ports or systems by means of a mail box. The semaphores are used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power-down feature is controlled independently on each port by a chip enable (CE) pin or SEM pin. The CY7C138 and CY7C139 are available in a 68-pin PLCC. The CY7C138 and CY7C139 are high-speed CMOS 4K x 8 and 4K x 9 dual-port static RAMs. Various arbitration schemes Logic Block Diagram R/WL R/WR CEL OE L CER OER (7C139)I/O8L I/O7L I/O CONTROL I/O0L I/O8R (7C139) I/O7R I/O CONTROL I/O0R [1, 2] BUSYR BUSY L[1, 2] A11L ADDRESS DECODER A0L CEL OEL INTERRUPT SEMAPHORE ARBITRATION A0R CE R OER R/WR R/WL SEML INTL[2] A11R ADDRESS DECODER MEMORY ARRAY SEMR INTR[2] M/S Notes: 1. BUSY is an output in master mode and an input in slave mode. 2. Interrupt: push-pull output and requires no pull-up resistor. Cypress Semiconductor Corporation Document #: 38-06037 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 6, 2005 CY7C138 CY7C139 Pin Configurations \ 9 8 7 6 A6L A8L A7L 5 4 3 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 CY7C138/9 52 51 50 49 48 A2L A1L A0L INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R A5R 47 46 45 44 A5L A4L A3L A7R A6R A 9R A8R 2728 29 30 3132 33 34 35 36 37 38 39 40 41 42 43 R/W R SEM R CER NC NC GND NC A 11R A10R 21 22 23 24 25 26 I/O7R I/O3R I/O4R I/O5R I/O6R 10 11 12 13 14 15 16 17 18 19 20 NC [3] OER I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VCC GND I/O0R I/O1R I/O2R VCC NC NC VCC NC A 11L A 10L A9L NC [4] OE L R/W L SEM L CEL I/O 1L I/O 0L 68-Pin PLCC Top View Pin Definitions Left Port Right Port Description I/O0L–7L(8L) I/O0R–7R(8R) Data Bus Input/Output A0L–11L A0R–11R Address Lines CEL CER Chip Enable OEL OER Output Enable R/WL R/WR Read/Write Enable SEML SEMR Semaphore Enable. When asserted LOW, allows access to eight semaphores. The three least significant bits of the address lines will determine which semaphore to write or read. The I/O0 pin is used when writing to a semaphore. Semaphores are requested by writing a 0 into the respective location. INTL INTR Interrupt Flag. INTL is set when right port writes location FFE and is cleared when left port reads location FFE. INTR is set when left port writes location FFF and is cleared when right port reads location FFF. BUSYL BUSYR Busy Flag M/S Master or Slave Select VCC Power GND Ground Selection Guide 7C138-15 7C139-15 Maximum Access Time (ns) 7C138-25 7C139-25 7C138-35 7C139-35 7C138-55 7C139-55 Unit 15 25 35 55 ns Maximum Operating Current Commercial 220 180 160 160 mA Maximum Standby Current for ISB1 Commercial 60 40 30 30 mA Notes: 3. I/O8R on the CY7C139. 4. I/O8L on the CY7C139. Document #: 38-06037 Rev. *B Page 2 of 16 CY7C138 CY7C139 Maximum Ratings[5] Output Current into Outputs (LOW)............................. 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Supply Voltage to Ground Potential ............... –0.5V to +7.0V Range DC Voltage Applied to Outputs in High Z State ............................................... –0.5V to +7.0V Commercial DC Input Voltage[6] ......................................... –0.5V to +7.0V Industrial Ambient Temperature VCC 0°C to +70°C 5V ± 10% –40°C to +85°C 5V ± 10% Electrical Characteristics Over the Operating Range 7C138-15 7C139-15 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 4.0 mA Min. Max. 2.4 7C138-25 7C139-25 Min. 2.4 0.4 VIH Max. 2.2 V 0.4 2.2 0.8 Unit V V VIL Input LOW Voltage 0.8 V IIX Input Leakage Current GND < VI < VCC –10 +10 –10 +10 µA IOZ Output Leakage Current Output Disabled, GND < VO < VCC –10 +10 –10 +10 µA ICC Operating Current VCC = Max., IOUT = 0 mA, Outputs Disabled Com’l 180 mA ISB1 Standby Current (Both Ports TTL Levels) CEL and CER > VIH, f = fMAX[7] Com’l ISB2 Standby Current (One Port TTL Level) CEL and CER > VIH, f = fMAX[7] Com’l Standby Current (Both Ports CMOS Levels) Both Ports CE and CER > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V, f = 0[7] Com’l Standby Current (One Port CMOS Level) One Port CEL or CER > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V, Active Port Outputs, f = fMAX[7] Com’l ISB3 ISB4 220 Ind 190 60 40 130 110 Ind 50 Ind mA 120 15 Ind Ind mA 15 mA 30 125 100 mA 115 Notes: 5. The Voltage on any input or I/O pin cannot exceed the power pin during power-up. 6. Pulse width < 20 ns. 7. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3. Document #: 38-06037 Rev. *B Page 3 of 16 CY7C138 CY7C139 Electrical Characteristics Over the Operating Range (continued) ] 7C138-35 7C139-35 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 4.0 mA Min. 7C138-55 7C139-55 Max. 2.4 Input LOW Voltage IIX Input Leakage Current GND < VI < VCC –10 +10 IOZ Output Leakage Current Output Disabled, GND < VO < VCC –10 +10 ICC Operating Current VCC = Max., IOUT = 0 mA, Outputs Disabled Com’l Ind Standby Current (Both Ports TTL Levels) CEL and CER > VIH, f = fMAX[7] Standby Current (One Port TTL Level) ISB3 ISB4 V 2.2 VIL 0.8 Unit V 0.4 2.2 ISB2 Max. 2.4 0.4 VIH ISB1 Min. V 0.8 V –10 +10 µA –10 +10 µA 160 160 mA 180 180 Com’l 30 30 Ind 40 40 CEL and CER > VIH, f = fMAX[7] Com’l 100 100 Ind 110 110 Standby Current (Both Ports CMOS Levels) Both Ports CE and CER > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V, f = 0[7] Com’l 15 15 Ind 30 30 Standby Current (One Port CMOS Level) One Port CEL or CER > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V, Active Port Outputs, f = fMAX[7] Com’l 90 90 Ind 100 100 mA mA mA mA Capacitance[8] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 10 pF 15 pF AC Test Loads and Waveforms 5V 5V R1 = 893Ω OUTPUT OUTPUT C = 30 pF R1 = 893Ω RTH = 250Ω OUTPUT C = 5 pF C = 30pF R2 = 347Ω R2 = 347Ω VTH = 1.4V (b) Thévenin Equivalent(Load 1) (a) Normal Load (Load 1) (c) Three-State Delay (Load 3) ALL INPUT PULSES OUTPUT 3.0V C = 30 pF GND 10% 90% < 3 ns 90% 10% < 3 ns Load (Load 2) Note: 8. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-06037 Rev. *B Page 4 of 16 CY7C138 CY7C139 Switching Characteristics Over the Operating Range[9] 7C138-15 7C139-15 Parameter Description Min. Max. 7C138-25 7C139-25 Min. Max. 7C138-35 7C139-35 Min. Max. 7C138-55 7C139-55 Min. Max. Unit READ CYCLE tRC Read Cycle Time 15 tAA Address to Data Valid tOHA Output Hold From Address Change tACE CE LOW to Data Valid 15 25 tDOE OE LOW to Data Valid 10 15 tLZOE[10,11,12] tHZOE[10,11,12] tLZCE[10,11,12] tHZCE[10,11,12] tPU[12] tPD[12] OE Low to Low Z 15 3 CE LOW to Power-Up 25 10 0 CE HIGH to Power-Down 35 15 0 15 ns 35 55 ns 20 25 ns 3 20 ns 25 3 20 0 25 ns 3 3 15 ns 55 3 3 10 55 3 3 3 CE HIGH to High Z 35 3 3 OE HIGH to High Z CE LOW to Low Z 25 ns 25 0 35 ns ns ns 55 ns WRITE CYCLE tWC Write Cycle Time 15 25 35 55 ns tSCE CE LOW to Write End 12 20 30 40 ns tAW Address Set-Up to Write End 12 20 30 40 ns tHA Address Hold From Write End 2 2 2 2 ns tSA Address Set-Up to Write Start 0 0 0 0 ns tPWE Write Pulse Width 12 20 25 30 ns tSD Data Set-Up to Write End 10 15 15 20 ns tHD Data Hold From Write End 0 0 0 0 ns tHZWE[11,12] tLZWE[11,12] tWDD[13] tDDD[13] R/W LOW to High Z R/W HIGH to Low Z 10 3 15 3 20 3 25 3 ns ns Write Pulse to Data Delay 30 50 60 70 ns Write Data Valid to Read Data Valid 25 30 35 40 ns 15 20 20 45 ns [14] BUSY TIMING tBLA BUSY LOW from Address Match tBHA BUSY HIGH from Address Mismatch 15 20 20 40 ns tBLC BUSY LOW from CE LOW 15 20 20 40 ns tBHC BUSY HIGH from CE HIGH 15 20 20 35 ns tPS Port Set-Up for Priority tWB R/W LOW after BUSY LOW 0 0 0 0 ns tWH R/W HIGH after BUSY HIGH 13 20 30 40 ns tBDD[15] BUSY HIGH to Data Valid 5 5 Note 15 5 Note 15 5 Note 15 ns Note 15 ns Notes: 9. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOI/IOH and 30-pF load capacitance. 10. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 11. Test conditions used are Load 3. 12. This parameter is guaranteed but not tested. 13. For information on part-to-part delay through RAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform. 14. Test conditions used are Load 2. 15. tBDD is a calculated parameter and is the greater of tWDD – tPWE (actual) or tDDD – tSD (actual). Document #: 38-06037 Rev. *B Page 5 of 16 CY7C138 CY7C139 Switching Characteristics Over the Operating Range[9] (continued) 7C138-15 7C139-15 Parameter Description Min. Max. 7C138-25 7C139-25 Min. Max. 7C138-35 7C139-35 Min. Max. 7C138-55 7C139-55 Min. Max. Unit [14] INTERRUPT TIMING tINS INT Set Time 15 25 25 30 ns tINR INT Reset Time 15 25 25 30 ns SEMAPHORE TIMING tSOP SEM Flag Update Pulse (OE or SEM) 10 10 15 20 ns tSWRD SEM Flag Write to Read Time 5 5 5 5 ns tSPS SEM Flag Contention Window 5 5 5 5 ns Switching Waveforms Read Cycle No. 1 (Either Port Address Access)[16, 17] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (Either Port CE/OE Access)[16, 18, 19] SEM or CE tHZCE tACE OE tLZOE tHZOE tDOE tLZCE DATA VALID DATA OUT tPU ICC tPD ISB Notes: 16. R/W is HIGH for read cycle. 17. Device is continuously selected CE = LOW and OE = LOW. This waveform cannot be used for semaphore reads. 18. Address valid prior to or coincident with CE transition LOW. 19. CEL = L, SEM = H when accessing RAM. CE = H, SEM = L when accessing semaphores. Document #: 38-06037 Rev. *B Page 6 of 16 CY7C138 CY7C139 Switching Waveforms (continued) Read Timing with Port-to-Port Delay (M/S = L)[20, 21] tWC ADDRESS R MATCH t R/W R PWE t DATA INR t SD HD VALID ADDRESS L MATCH tDDD DATAOUTL VALID tWDD Write Cycle No. 1: OE Three-States Data I/Os (Either Port)[22, 23, 24] tWC ADDRESS tSCE SEM OR CE tAW tHA tPWE R/W tSA tSD DATA IN tHD DATA VALID OE t tHZOE DATA OUT LZOE HIGH IMPEDANCE Notes: 20. BUSY = HIGH for the writing port. 21. CEL = CER = LOW. 22. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 23. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can be as short as the specified tPWE. 24. R/W must be HIGH during all address transitions. Document #: 38-06037 Rev. *B Page 7 of 16 CY7C138 CY7C139 Switching Waveforms (continued) Write Cycle No. 2: R/W Three-States Data I/Os (Either Port)[22, 24, 25] tWC ADDRESS tSCE tHA SEM OR CE tAW tSA R/W tPWE tSD tHD DATA VALID DATA IN tLZWE HIGH IMPEDANCE tHZWE DATA OUT Semaphore Read After Write Timing, Either Side[26] tOHA tAA A0–A 2 VALID ADDRESS VALID ADDRESS tAW tACE tHA SEM tSCE tSOP tSD I/O0 DATAIN VALID tSA tPWE DATAOUT VALID tHD R/W tSWRD tDOE tSOP OE WRITE CYCLE READ CYCLE Notes: 25. Data I/O pins enter high impedance when OE is held LOW during write. 26. CE = HIGH for the duration of the above timing (both write and read cycle). Document #: 38-06037 Rev. *B Page 8 of 16 CY7C138 CY7C139 Switching Waveforms (continued) Timing Diagram of Semaphore Contention[27, 28, 29] A0L–A2L MATCH R/WL SEML tSPS A0R–A2R MATCH R/WR SEMR Timing Diagram of Read with BUSY (M/S = HIGH)[21] tWC ADDRESS R MATCH tPWE R/WR tSD DATA INR tHD VALID tPS ADDRESS L MATCH tBLA tBHA BUSYL tBDD tDDD DATAOUTL VALID tWDD Write Timing with Busy Input (M/S=LOW) tPWE R/W BUSY tWB tWH Notes: 27. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH 28. Semaphores are reset (available to both ports) at cycle start. 29. If tSPS is violated, the semaphore will definitely be obtained by one side or the other, but there is no guarantee which side will control the semaphore. Document #: 38-06037 Rev. *B Page 9 of 16 CY7C138 CY7C139 Switching Waveforms (continued) Busy Timing Diagram No. 1 (CE Arbitration)[30] CEL Valid First: ADDRESS L,R ADDRESS MATCH CEL tPS CER tBLC tBHC BUSYR CER Valid First: ADDRESS L,R ADDRESS MATCH CER tPS CEL tBLC tBHC BUSY L Busy Timing Diagram No. 2 (Address Arbitration)[30] Left Address Valid First: tRC or tWC ADDRESS L ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESS R tBLA tBHA BUSYR Right Address Valid First: tRC or tWC ADDRESS R ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESS L tBLA tBHA BUSY L Note: 30. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted. Document #: 38-06037 Rev. *B Page 10 of 16 CY7C138 CY7C139 Switching Waveforms (continued) Interrupt Timing Diagrams Left Side Sets INTR: tWC ADDRESS L WRITE FFF tHA[31] CE L R/W L INTR tINS[32] Right Side Clears INTR: tRC ADDRESSR READ FFF CE R tINR[32] R/W R OE R INT R Right Side Sets INTL: tWC ADDRESSR WRITE FFE tHA[31] CER R/W R INT L tINS[32] Left Side Clears INTL: tRC ADDRESSR READ FFE CE L tINR [32] R/W L OE L INT L Notes: 31. tHA depends on which enable pin (CEL or R/WL) is deasserted first. 32. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last. Document #: 38-06037 Rev. *B Page 11 of 16 CY7C138 CY7C139 Architecture The CY7C138/9 consists of an array of 4K words of 8/9 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY pin is provided on each port. Two interrupt (INT) pins can be utilized for port–to–port communication. Two semaphore (SEM) control pins are used for allocating shared resources. With the M/S pin, the CY7C138/9 can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The CY7C138/9 has an automatic power-down feature controlled by CE. Each port is provided with its own output enable control (OE), which allows data to be read from the device. Functional Description Write Operation Data must be set up for a duration of tSD before the rising edge of R/W in order to guarantee a valid write. A write operation is controlled by either the OE pin (see Write Cycle No. 1 waveform) or the R/W pin (see Write Cycle No. 2 waveform). Data can be written to the device tHZOE after the OE is deasserted or tHZWE after the falling edge of R/W. Required inputs for non-contention operations are summarized in Table 1. If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must be met before the data is read on the output; otherwise the data read is not deterministic. Data will be valid on the port tDDD after the data is presented on the other port. Read Operation When reading the device, the user must assert both the OE and CE pins. Data will be available tACE after CE or tDOE after OE is asserted. If the user of the CY7C138/9 wishes to access a semaphore flag, then the SEM pin must be asserted instead of the CE pin. Interrupts The interrupt flag (INT) permits communications between ports.When the left port writes to location FFF, the right port’s interrupt flag (INTR) is set. This flag is cleared when the right port reads that same location. Setting the left port’s interrupt flag (INTL) is accomplished when the right port writes to location FFE. This flag is cleared when the left port reads location FFE. The message at FFF or FFE is user-defined. See Table 2 for input requirements for INT. INTR and INTL are push-pull outputs and do not require pull-up resistors to operate. BUSYL and BUSYR in master mode are push-pull outputs and do not require pull-up resistors to operate. Busy The CY7C138/9 provides on-chip arbitration to alleviate simultaneous memory location access (contention). If both ports’ CEs are asserted and an address match occurs within tPS of each other the Busy logic will determine which port has access. If tPS is violated, one port will definitely gain permission to the location, but it is not guaranteed which one. BUSY will be asserted tBLA after an address match or tBLC after CE is taken LOW. Document #: 38-06037 Rev. *B Master/Slave A M/S pin is provided in order to expand the word width by configuring the device as either a master or a slave. The BUSY output of the master is connected to the BUSY input of the slave. This will allow the device to interface to a master device with no external components.Writing of slave devices must be delayed until after the BUSY input has settled. Otherwise, the slave chip may begin a write cycle during a contention situation.When presented as a HIGH input, the M/S pin allows the device to be used as a master and therefore the BUSY line is an output. BUSY can then be used to send the arbitration outcome to a slave. Semaphore Operation The CY7C138/9 provides eight semaphore latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are shared between the two ports.The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value will be available tSWRD + tDOE after the rising edge of the semaphore write. If the left port was successful (reads a zero), it assumes control over the shared resource, otherwise (reads a one) it assumes the right port has control and continues to poll the semaphore.When the right side has relinquished control of the semaphore (by writing a one), the left side will succeed in gaining control of the a semaphore.If the left side no longer requires the semaphore, a one is written to cancel its request. Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip enable for the semaphore latches (CE must remain HIGH during SEM LOW). A0–2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access.When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only I/O0 is used. If a zero is written to the left port of an unused semaphore, a one will appear at the same semaphore address on the right port. That semaphore can now only be modified by the side showing zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore will be set to one for both sides. However, if the right port had requested the semaphore (written a zero) while the left port had control, the right port would immediately own the semaphore as soon as the left port released it. Table 3 shows sample semaphore operations. When reading a semaphore, all eight/nine data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports attempt to access the semaphore within tSPS of each other, the semaphore will definitely be obtained by one side or the other, but there is no guarantee which side will control the semaphore. Initialization of the semaphore is not automatic and must be reset during initialization program at power-up. All semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. Page 12 of 16 CY7C138 CY7C139 Table 1. Non-Contending Read/Write Inputs CE Outputs R/W OE SEM H X X H High Z Power-Down H H L L Data Out Read Data in Semaphore X X H X High Z I/O Lines Disabled X L Data In Write to Semaphore H I/O0-7/8 Operation L H L H Data Out Read L L X H Data In Write L X X L Illegal Condition Table 2. Interrupt Operation Example (assumes BUSYL=BUSYR=HIGH) Left Port Function Right Port R/W CE OE A0-11 INT Set Left INT X X X X L Reset Left INT X L L FFE H Set Right INT L L X FFF X Reset Right INT X X X X X R/W CE OE A0-11 INT L L X FFE X X X X X X X X X X L X L L FFF H Table 3. Semaphore Operation Example Function I/O0-7/8 Left I/O0-7/8 Right No action 1 1 Semaphore free Left port writes semaphore 0 1 Left port obtains semaphore Right port writes 0 to semaphore 0 1 Right side is denied access Left port writes 1 to semaphore 1 0 Right port is granted access to semaphore Left port writes 0 to semaphore 1 0 No change. Left port is denied access Right port writes 1 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No port accessing semaphore address Right port writes 0 to semaphore 1 0 Right port obtains semaphore Right port writes 1 to semaphore 1 1 No port accessing semaphore Left port writes 0 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No port accessing semaphore Document #: 38-06037 Rev. *B Status Page 13 of 16 CY7C138 CY7C139 ICC 1.0 ISB3 0.8 0.6 0.4 0.2 0.0 4.0 4.5 5.0 5.5 ICC 1.0 ISB3 0.8 0.6 VCC = 5.0V VIN = 5.0V 0.4 0.2 0.6 –55 6.0 NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 1.6 1.3 1.4 NORMALIZED tAA NORMALIZED tAA 125 1.2 1.1 TA = 25°C 1.2 1.0 VCC = 5.0V 0.8 0.9 0.8 4.0 4.5 5.0 5.5 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 200 160 120 VCC = 5.0V TA = 25°C 80 40 0 0 AMBIENT TEMPERATURE (°C) SUPPLY VOLTAGE (V) 1.0 25 0.6 –55 6.0 25 2.0 3.0 4.0 5.0 140 OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 120 100 80 60 40 VCC = 5.0V TA = 25°C 20 0 0.0 125 1.0 AMBIENT TEMPERATURE (°C) SUPPLY VOLTAGE (V) 1.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT (mA) 1.2 1.2 NORMALIZED I,CC ISB NORMALIZED ICC, ISB 1.4 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE OUTPUT SOURCE CURRENT (mA) Typical DC and AC Characteristics 2.0 3.0 4.0 5.0 OUTPUT VOLTAGE (V) VIN = 5.0V TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 1.00 NORMALIZED ICC DELTA tAA (ns) NORMALIZED tPC 25.0 0.75 20.0 15.0 0.50 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) Document #: 38-06037 Rev. *B 5.0 0 VCC = 5.0V TA = 25°C VIN = 5.0V 1.0 VCC = 4.5V TA = 25°C 5.0 0 NORMALIZED ICC vs. CYCLE TIME 0.75 10.0 0.25 1.25 0 200 400 600 800 1000 CAPACITANCE (pF) 0.50 10 28 40 66 CYCLE FREQUENCY (MHz) Page 14 of 16 CY7C138 CY7C139 Ordering Information 4K x8 Dual-Port SRAM Speed (ns) 15 25 35 55 Ordering Code CY7C138-15JC Package Name J81 Package Type Operating Range 68-Lead Plastic Leaded Chip Carrier Commercial CY7C138-15JXC J81 68-Lead Pb-Free Plastic Leaded Chip Carrier CY7C138-25JC J81 68-Lead Plastic Leaded Chip Carrier Commercial CY7C138-25JXC J81 68-Lead Pb-Free Plastic Leaded Chip Carrier CY7C138-25JI J81 68-Lead Plastic Leaded Chip Carrier Industrial CY7C138-35JC J81 68-Lead Plastic Leaded Chip Carrier Commercial CY7C138-35JI J81 68-Lead Plastic Leaded Chip Carrier Industrial CY7C138-55JC J81 68-Lead Plastic Leaded Chip Carrier Commercial CY7C138-55JI J81 68-Lead Plastic Leaded Chip Carrier Industrial 4K x9 Dual-Port SRAM Speed (ns) Ordering Code Package Type Package Type Operating Range 15 CY7C139-15JC J81 68-Lead Plastic Leaded Chip Carrier Commercial 25 CY7C139-25JC J81 68-Lead Plastic Leaded Chip Carrier Commercial 35 55 CY7C139-25JXC J81 68-Lead Pb-Free Plastic Leaded Chip Carrier CY7C139-25JI J81 68-Lead Plastic Leaded Chip Carrier Industrial CY7C139-35JC J81 68-Lead Plastic Leaded Chip Carrier Commercial CY7C139-35JI J81 68-Lead Plastic Leaded Chip Carrier Industrial CY7C139-55JC J81 68-Lead Plastic Leaded Chip Carrier Commercial CY7C139-55JI J81 68-Lead Plastic Leaded Chip Carrier Industrial Package Diagram 68-Lead Plastic Leaded Chip Carrier J81 68-Lead Pb-Free Plastic Leaded Chip Carrier J81 51-85005-*A All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-06037 Rev. *B Page 15 of 16 © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C138 CY7C139 Document History Page Document Title: CY7C138/CY7C139 4K x 8/9 Dual-Port Static RAM Document Number: 38-06037 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 110180 09/29/01 SZV Change from Spec number: 38-00536 to 38-06037 *A 122287 12/27/02 RBI Power up requirements added to Maximum Ratings Information *B 393403 See ECN YIM Added Pb-Free Logo Added Pb-Free parts to ordering information: CY7C138-15JXC, CY7C138-25JXC, CY7C139-25JXC Document #: 38-06037 Rev. *B Page 16 of 16