ETC J230

Databook.fxp 1/13/99 2:09 PM Page B-58
B-58
01/99
J230, J231
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Audio Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
J230
At 25°C free air temperature:
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Operating Current
IG
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
Typ
J231
Max
– 40
Min
Typ
Process NJ16
Max
Unit
V
IG = – 1µA, VDS = ØV
– 250
pA
VGS = – 30V, VDS = ØV
– 40
– 250
–2
– 40 V
50 mA
360 mW
3.27 mW/°C
–2
Test Conditions
pA
VDS = 20V, ID = ØV
– 0.5
–3
– 1.5
–5
V
VDS = 20V, ID = 1 µA
IDSS
0.7
3
2
6
mA
VDS = 20V, VGS = ØV
Common Source Forward
Transconductance
g fs
1000
3500
1500
4000
µS
VDS = 20V, VGS = ØV
f = 1 kHz
Common Source Output Conductance
g os
1.5
3
µS
VDS = 20V, VGS = ØV
f = 1 kHz
Common Source Input Capacitance
Ciss
4
4
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
1
1
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Equivalent Short Circuit Input
Noise Voltage
e¯ N
nV/√Hz
VDS = 10V, VGS = ØV
f = 10 Hz
nV/√Hz
VDS = 10V, VGS = ØV
f = 1 kHz
Dynamic Electrical Characteristics
8
2
30
8
30
2
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ230, SMPJ231
Pin Configuration
1 Drain, 2 Source, 3 Gate
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