Databook.fxp 1/13/99 2:09 PM Page B-58 B-58 01/99 J230, J231 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J230 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J231 Max – 40 Min Typ Process NJ16 Max Unit V IG = – 1µA, VDS = ØV – 250 pA VGS = – 30V, VDS = ØV – 40 – 250 –2 – 40 V 50 mA 360 mW 3.27 mW/°C –2 Test Conditions pA VDS = 20V, ID = ØV – 0.5 –3 – 1.5 –5 V VDS = 20V, ID = 1 µA IDSS 0.7 3 2 6 mA VDS = 20V, VGS = ØV Common Source Forward Transconductance g fs 1000 3500 1500 4000 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Output Conductance g os 1.5 3 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N nV/√Hz VDS = 10V, VGS = ØV f = 10 Hz nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics 8 2 30 8 30 2 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ230, SMPJ231 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com