Databook.fxp 1/14/99 12:56 PM Page B-32 B-32 01/99 IF1331 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF1331 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ132H Max Unit – 20 – 0.35 5 – 20 V 10 mA 225 mW 1.8 mW/°C – 65°C to 200°C – 0.1 – 1.5 20 Test Conditions V IG = – 1 µA, VDS = ØV nA V mA VDS = ØV, VGS = – 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/√Hz VDS = 10V, ID = 5 mA f = 1 kHz 10 Typ Equivalent Short Circuit Input Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 2.5 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com