Databook.fxp 1/13/99 2:09 PM Page D-4 D-4 01/99 IFN112 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN112 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS – 50 V 10 mA 360 mW 2.88 mW/°C – 65°C to 200°C Process NJ132H Max Unit – 50 Test Conditions V IG = – 1 µA, VDS = ØV – 0.25 1.2 – 0.1 – 1.2 9.0 nA V mA VDS = ØV, VGS = – 30V VDS = 15V, ID = 100 nA VDS = 15V, VGS = ØV 7 34 mS VDS = 15V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Typ Common Source Input Capacitance Ciss 12 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 3 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 2.5 nV/√Hz VDS = 10V, ID = 5.0 mA f = 1 kHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com