IFN112 N-Channel Silicon Junction Field-Effect Transistor

Databook.fxp 1/13/99 2:09 PM Page D-4
D-4
01/99
IFN112
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain
¥ Equivalent to Japanese 2SK112
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
At 25°C free air temperature:
IFN112
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
IGSS
VGS(OFF)
IDSS
– 50 V
10 mA
360 mW
2.88 mW/°C
– 65°C to 200°C
Process NJ132H
Max
Unit
– 50
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 0.25
1.2
– 0.1
– 1.2
9.0
nA
V
mA
VDS = ØV, VGS = – 30V
VDS = 15V, ID = 100 nA
VDS = 15V, VGS = ØV
7
34
mS
VDS = 15V, VGS = ØV
f = 1 kHz
Dynamic Electrical Characteristics
Common Source Forward Transconductance
gfs
Typ
Common Source Input Capacitance
Ciss
12
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Common Source Reverse Transfer Capacitance
Crss
3
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Equivalent Short Circuit Input Noise Voltage
e¯ N
2.5
nV/√Hz
VDS = 10V, ID = 5.0 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ18 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate & Case
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