XTS XTS2312 N-Channel Enhancement Mode Field Effect Transistor VDS=20V， ID=4.5A [email protected] RDS(ON)< 33mΩ, [email protected] RDS(ON)< 40mΩ, XTS2312 Features ● high dense cell design for extremely low RDS(ON) ● Rugged and reliable. ● Lead free product is acquired ● SOT-23-3L Package ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Symbol V Drain-Source Voltage Limit Unit 20 V V GS ±8 V I D 4.5 A DM 13.5 A P 1.25 W -55 to 150 ℃ Limit Units DS Gate- Source Voltage a Drain Current –Continuous @ T =125℃ Pulsed I J Maximum Power Dissipation a D T ，T Operating Junction and Storage Temperature Range J STG THERMAL CHARACTERISTICS Parameter Symbol R Thermal Resistance，Junction-to-Ambient 100 θJA ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Symbol Condition Min Typ Max Unit BV VGS=0V，ID=250µA Zero Gate Voltage Drain Current I V =20V，V =0V 1 µA Gate-Body Leakage Current For I VGS=8V，VDS=0V 100 Gate-Body Leakage Current Rev I GSSR VGS=-8V，VDS=0V -100 nA nA GS(th) VDS=VGS,ID=50µA 1.2 V ON CHARACTERISTICE Gate Threshold Voltage DSS DSS GSSF DS 20 V GS b Drain-Source On-State Resistance V 27 33 mΩ DS(ON) VGS=2.5V, ID=4.5A 33 40 mΩ g VDS=10V, ID=5.0A 10 S VDS=8V,VGS=0V,F=1.0MHz 500 300 140 PF PF PF R Forward Transconductance 0.5 V =4.5V,I =5.0A GS FS D C DYNAMIC CHARACTERISTICS Input Capacitance Clss Output Capacitance Coss C Reverse Transfer Capacitance RSS C SWITCHING CHARACTERISTICS t Turn-on Delay Time d(on) t Turn-on Rise Time Turn-Off Delay Time Fall Time t r d(off) t f V =10V D I =1A D V =4.5V GS R =6Ω GEN 20 40 18 40 60 108 28 56 ns ns ns ns Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd V =10V,I =4.5A, DS D V =4.5V GS 10 15 2.3 2.9 nC nC nC b DRAIN-SOURCE DIODE CHARACTERISTICS V V =0V,I =1.0A Diode Forward Voltage SD GS S I Diode Forward Current S NOTES: a. Repetitive Rating: Pulse width limited by maximum junction temperature b. Surface Mounted on FR4 Board. t≤10sec. c. Pulse Test: Pulse Width ≤ 300 µs. Duty Cycle ≤ 2% d. Guaranteed by design. not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 1 Switching Test Circuit and Waveforms Figure 2: Normalized Maximum Transient Thermal Impedance 1.2 V 1 A SOT-23-3L PACKAGE INFORMATION Dimensions in Millmeters (UNIT:mm)