Gem micro GM8205A semiconductor Inc. Pb Pb free Dual N-Channel High Density Trench MOSFET (20V, 6.0A) PRODUCT SUMMARY VDSS ID 20V 6.0A RDS(on) (m-ohm) Max 28 @ VGS =4.0V, ID=6.0A 40 @ VGS =2.5V, ID=5.2A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Lead free product is acquired • Surface mount Package Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Drain Current (Continuous) 6.0 A IDM Drain Current (Pulsed) a 20 A PD o Total Power Dissipation @TA=25 C 2.0 W IS Maximum Diode Forward Current 1.7 A -55 to +150 °C 62 °C/W Tj, Tstg RθJA Operating Junction and Storage Temperature Range b Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board DS-GM8205A-REV00 Aa1 Ratings 1 Gem micro GM8205A semiconductor Inc. Pb Pb free Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±100 nA VDS=VGS, ID=250uA 0.6 0.7 1.2 V VGS=4.0V, ID=6.0A - 20 28 VGS=2.5V, ID=5.2A - 26 40 VDS=10V, ID=6.0A - 5 - - 559 - - 148 - - 127 - - 5 - - 0.9 - b • ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance • DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance mΩ S C VDS=8V, VGS=0V, f=1MHz PF C • SWITCHING CHARACTERISTICS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.4 - td(on) Turn-on Delay Time - 10.2 - tr Turn-on Rise Time VDD=10V, RL=10Ω, ID=1A, - 7 - td(off) Turn-off Delay Time VGEN=10V, RG=6Ω - 33 - - 6.8 - - - 1.2 tf VDS=10V, ID=3.0A, VGS=4.5V Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% DS-GM8205A-REV00 Aa1 2 V Gem micro semiconductor Inc. Characteristics Curve DS-GM8205A-REV00 Aa1 3 GM8205A Pb Pb free Gem micro semiconductor Inc. Characteristics Curve DS-GM8205A-REV00 Aa1 4 GM8205A Pb Pb free