MICROSEMI APT100GF60JU2

APT100GF60JU2
ISOTOP® Boost chopper
NPT IGBT
K
C
VCES = 600V
IC = 100A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
•
Non Punch Through (NPT) THUNDERBOLT IGBT ®
•
•
•
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
G
E
K
E
C
G
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP
Symbol
VCES
IC1
IC2
ICM
VGE
PD
IFA V
IFRMS
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
TC = 80°C
Max ratings
600
120
100
320
±20
416
30
39
Unit
V
A
V
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1-9
APT100GF60JU2 – Rev 1 June, 2006
Absolute maximum ratings
APT100GF60JU2
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn off Switching Energy
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
VGE = 0V, IC = 100µA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 100A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = ±20V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGS = 15V
VBus = 300V
IC = 100A
Resistive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 100A
R G = 5Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 100A
R G = 5Ω
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Typ
Max
600
2.0
2.2
3
Typ
4300
470
400
330
290
200
26
25
150
30
3.35
2.85
26
25
170
40
4.3
3.5
100
1000
2.5
Unit
V
µA
V
5
±150
V
nA
Max
Unit
pF
nC
ns
mJ
ns
mJ
2-9
APT100GF60JU2 – Rev 1 June, 2006
Electrical Characteristics
APT100GF60JU2
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
250
500
Tj = 125°C
Characteristic
RthJC
Min
Typ
IGBT
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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Max
1.8
44
Thermal and package characteristics
Symbol
Typ
1.6
1.9
1.4
2500
-55
Unit
V
µA
pF
ns
A
nC
ns
nC
A
Max
0.3
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
3-9
APT100GF60JU2 – Rev 1 June, 2006
Chopper diode ratings and characteristics
APT100GF60JU2
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
Tc=-55°C
250µs Pulse Test
< 0.5% Duty cycle
300
250
Ic, Collector Current (A)
Tc=25°C
200
150
Tc=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
250
200
Tc=25°C
150
100
Tc=125°C
50
0
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
2
Transfer Characteristics
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250
200
150
100
TJ =25°C
50
TJ =125°C
TJ =-55°C
0
0
1
2
3
4
5
6
7
8
9
IC = 100A
TJ = 25°C
16
14
VCE=480V
8
6
4
2
0
0
50
100
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Ic=200A
5
4
3
Ic=100A
2
Ic=50A
1
0
6
8
10
12
14
200
250
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=200A
3
2.5
Ic=100A
2
1.5
Ic=50A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
-50
16
VGE, Gate to Emitter Voltage (V)
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
160
Ic, DC Collector Current (A)
1.20
1.10
1.00
0.90
0.80
0.70
-50
150
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
6
VCE=300V
10
10
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
VCE=120V
12
VGE, Gate to Emitter Voltage (V)
7
4
Gate Charge
18
250µs Pulse Test
< 0.5% Duty cycle
3
VCE, Collector to Emitter Voltage (V)
300
Collector to Emitter Breakdown
Voltage (Normalized)
Tc=-55°C
-25
0
25
50
75
140
120
100
80
60
40
20
100 125
TJ, Junction Temperature (°C)
0
-50 -25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
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4-9
APT100GF60JU2 – Rev 1 June, 2006
Ic, Collector Current (A)
350
APT100GF60JU2
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
30
VGE = 15V
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
250
200
VGE=15V,
TJ=125°C
150
100
50
150
25
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VGE=15V,
TJ=125°C
150
TJ = 125°C
40
20
TJ = 25°C
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
25
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 5Ω
6
TJ =125°C,
VGE=15V
4
T J=25°C,
VGE=15V
2
0
0
25
50
75
100
125
Eoff, Turn-off Energy Loss (mJ)
6
8
Eon, Turn-On Energy Loss (mJ)
125
60
0
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 5Ω
5
4
TJ = 125°C
TJ = 25°C
3
2
1
0
150
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
150
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
10
VCE = 400V
VGE = 15V
TJ= 125°C
12
Eon, 200A
Switching Energy Losses (mJ)
Switching Energy Losses (mJ)
100
VCE = 400V, VGE = 15V, RG = 5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VCE = 400V
RG = 5Ω
20
16
75
Current Fall Time vs Collector Current
80
40
50
ICE, Collector to Emitter Current (A)
80
60
VGE=15V,
TJ=25°C
VCE = 400V
RG = 5Ω
Eoff, 200A
Eoff, 100A
8
Eon, 100A
Eoff, 50A
4
Eon, 50A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
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VCE = 400V
V GE = 15V
8
Eon, 200A
RG = 5Ω
Eoff, 200A
6
Eon, 100A
4
Eoff, 100A
2
Eoff, 50A
Eon, 50A
0
0
25
50
75
100
TJ, Junction Temperature (°C)
125
5-9
APT100GF60JU2 – Rev 1 June, 2006
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APT100GF60JU2
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
10000
350
IC, Collector Current (A)
C, Capacitance (pF)
Cies
1000
Coes
Cres
300
250
200
150
100
50
100
0
0
10
20
30
40
50
0
VCE, Collector to Emitter Voltage (V)
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.1
0.5
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
120
1
10
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
100
80
60
40
20
0
20
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40
60
80
100
IC, Collector Current (A)
120
6-9
APT100GF60JU2 – Rev 1 June, 2006
0.15
Fmax, Operating Frequency (kHz)
Thermal Impedance (°C/W)
0.35
APT100GF60JU2
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7-9
APT100GF60JU2 – Rev 1 June, 2006
Typical Diode Performance Curve
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8-9
APT100GF60JU2 – Rev 1 June, 2006
APT100GF60JU2
APT100GF60JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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9-9
APT100GF60JU2 – Rev 1 June, 2006
Dimensions in Millimeters and (Inches)