APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant C EK G Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 275 200 600 ±20 1136 Tj = 150°C 400A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF200U120DG – Rev 1 July, 2006 E CK Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGF200U120DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Symbol Characteristic IRM Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 13.8 1.32 0.88 1320 140 800 35 65 320 Max 500 750 3.7 Unit 6.5 ±300 V nA Max Unit VR=1200V IF = 240A IF = 480A IF = 240A IF = 240A VR = 800V di/dt =800A/µs www.microsemi.com V nC ns 30 35 65 ns 360 40 22 mJ 12.2 Typ Max Unit V Tj = 25°C Tj = 125°C Tc = 70°C µA nF 1200 Maximum Reverse Leakage Current DC Forward Current 4.5 Min Maximum Repetitive Reverse Voltage IF Typ 3.2 4.0 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω VGE = 15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 1.2Ω Series diode ratings and characteristics VRRM Min VGS = 15V VBus = 600V IC = 200A Fall Time Td(on) Tr Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE, IC = 4mA VGE = ±20V, VCE = 0V 750 1000 Tj = 125°C 240 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C Tj = 125°C 4.8 16 µA A 2.5 V ns µC 2–6 APTGF200U120DG – Rev 1 July, 2006 Symbol Characteristic APTGF200U120DG Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.11 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF200U120DG – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGF200U120DG Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 400 TJ=125°C 200 100 TJ=125°C 50 0 2 4 6 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) Transfer Characteristics 1200 250µs Pulse Test < 0.5% Duty cycle 1000 800 600 400 TJ=125°C 200 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=400A Ic=200A 3 2 Ic=100A 1 0 9 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) VCE=240V IC = 200A TJ = 25°C 16 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 200 400 600 800 1000 1200 1400 Gate Charge (nC) 5 4 4 Gate Charge 0 VCE, Collector to Emitter Voltage (V) 8 1 2 3 VCE, Collector to Emitter Voltage (V) 18 16 On state Voltage vs Gate to Emitter Volt. 9 0 8 On state Voltage vs Junction Temperature 6 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 Ic=200A 4 3 Ic=100A 2 1 0 -50 16 Breakdown Voltage vs Junction Temp. 350 1.15 300 Ic, DC Collector Current (A) 1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Ic=400A -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 250 200 150 100 50 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 www.microsemi.com -25 0 25 50 75 100 125 TC , Case Temperature (°C) 150 4–6 APTGF200U120DG – Rev 1 July, 2006 0 Ic, Collector Current (A) T J=25°C 150 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 600 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 200 Ic, Collector Current (A) Ic, Collector Current (A) 800 APTGF200U120DG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 V CE = 600V R G = 1.2Ω 40 V GE = 15V 35 30 25 0 100 200 300 400 400 V GE=15V, TJ=125°C 350 300 250 V CE = 600V R G = 1.2Ω 200 500 0 100 ICE, Collector to Emitter Current (A) 200 300 400 500 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current Current Fall Time vs Collector Current 50 180 V CE = 600V R G = 1.2Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) V GE=15V, TJ=25°C 100 V GE=15V 60 TJ = 125°C 40 TJ = 25°C 30 VCE = 600V, V GE = 15V, RG = 1.2Ω 20 20 100 200 300 400 ICE, Collector to Emitter Current (A) 500 V CE = 600V RG = 1.2Ω TJ=125°C, V GE=15V 40 20 0 100 200 300 400 ICE, Collector to Emitter Current (A) 500 40 Eoff, 200A 24 Eon, 100A 8 24 TJ = 125°C 16 8 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Eon, 200A 32 16 V CE = 600V V GE = 15V RG = 1.2Ω Capacitance vs Collector to Emitter Voltage 100000 C, Capacitance (pF) 48 32 0 Switching Energy Losses vs Gate Resistance 56 V CE = 600V V GE = 15V TJ= 125°C 500 Cies 10000 Coes 1000 Cres Eoff, 100A 100 0 0 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 www.microsemi.com 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 5–6 APTGF200U120DG – Rev 1 July, 2006 60 100 200 300 400 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 80 0 Switching Energy Losses (mJ) 0 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 450 VCE = 600V D = 50% RG = 1.2Ω TJ = 125°C TC= 75°C 100 80 60 40 Hard switching 20 ZCS ZVS 0.08 0.06 0.04 0.02 350 300 250 200 150 100 0 60 100 140 180 IC , Collector Current (A) 220 0 400 800 1200 V CE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 400 50 0 20 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area Operating Frequency vs Collector Current 120 I C, Collector Current (A) Fmax, Operating Frequency (kHz) APTGF200U120DG 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF200U120DG – Rev 1 July, 2006 Rectangular Pulse Duration (Seconds)